942 resultados para field-effect sensor


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N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.

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The main advantage of organic electronics over the more widespread inorganic counterparts lies not in the electrical performance, but rather in the solution processability that opens up for low-cost flexible electronics (e.g. displays, sensors and smart tags) fabricated by using printing techniques. Replacing the commonly used laboratory-scale fabrication techniques with mass-printing techniques is, however, truly challenging, especially when low-voltage operation is required. In this thesis it is, nevertheless, demonstrated that low-voltage organic transistors can be fully printed with a similar performance to that of transistors made by laboratory scale techniques. The use of an ion-modulated type of organic field effect transistor (OFET) not only enabled low-voltage operation and printability, but was also found to result in low sensitivity to the surface roughness of the substrate. This allows not only the use of low-cost plastic substrates, but even the use of paper as a substrate. However, while absorption into the porous paper surface is advantageous in a graphical printing process, by reducing the spreading and the coffee-stain effect and by improving the adhesion, it provides great challenges when applying thin electrically active layers. In spite of these difficulties we were able to demonstrate the first low-voltage OFET to be fabricated on paper. We have also shown that low-cost incandescent lamps can be used for sintering printed metal-nanoparticles, and that the process was especially suitable on paper and compatible with a roll-to-roll manufacturing process.

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This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

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In this thesis, the contact resistance of graphene devices was investigated because high contact resistance is detrimental to the performance of graphene field-effect transistors (GFET). Method for increasing so-called edge-contact area was applied in device fabrication process, as few nanometers thick Ni layer was used as a catalytic etchant during the annealing process. Finally, Ni was also used as a metal for contact. GFETs were fabricated using electron beam lithography using graphene fabricated by chemical vapor deposition (CVD). Critical part of the fabrication process was to preserve the high quality of the graphene channel while etching the graphene at contact areas with Ni during the annealing. This was achieved by optimizing the combination of temperature and gas flows. The structural properties of graphene were studied using scanning electron microscopy, scanning confocal μ-Raman spectroscopy and optical microscopy. Evaluation of electric transport properties including contact resistance was carried out by transmission line method and four-probe method. The lowest contact resistance found was about at 350 Ωμm. In addition, different methods to transfer CVD graphene synthesized on copper were studied. Typical method using PMMA as a supporting layer leaves some residues after its removal, thus effecting on the performance of a graphene devices. In a metal assisted transfer method, metal is used as an interfacial layer between PMMA and graphene. This allows more effective removal of PMMA. However, Raman spectra of graphene transferred by metal assisted method showed somewhat lower quality than the PMMA assisted method

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Defects in semiconductor crystals and at their interfaces usually impair the properties and the performance of devices. These defects include, for example, vacancies (i.e., missing crystal atoms), interstitials (i.e., extra atoms between the host crystal sites), and impurities such as oxygen atoms. The defects can decrease (i) the rate of the radiative electron transition from the conduction band to the valence band, (ii) the amount of charge carriers, and (iii) the mobility of the electrons in the conduction band. It is a common situation that the presence of crystal defects can be readily concluded as a decrease in the luminescence intensity or in the current flow for example. However, the identification of the harmful defects is not straightforward at all because it is challenging to characterize local defects with atomic resolution and identification. Such atomic-scale knowledge is however essential to find methods for reducing the amount of defects in energy-efficient semiconductor devices. The defects formed in thin interface layers of semiconductors are particularly difficult to characterize due to their buried and amorphous structures. Characterization methods which are sensitive to defects often require well-defined samples with long range order. Photoelectron spectroscopy (PES) combined with photoluminescence (PL) or electrical measurements is a potential approach to elucidate the structure and defects of the interface. It is essential to combine the PES with complementary measurements of similar samples to relate the PES changes to changes in the interface defect density. Understanding of the nature of defects related to III-V materials is relevant to developing for example field-effect transistors which include a III-V channel, but research is still far from complete. In this thesis, PES measurements are utilized in studies of various III-V compound semiconductor materials. PES is combined with photoluminescence measurements to study the SiO2/GaAs, SiNx/GaAs and BaO/GaAs interfaces. Also the formation of novel materials InN and photoluminescent GaAs nanoparticles are studied. Finally, the formation of Ga interstitial defects in GaAsN is elucidated by combining calculational results with PES measurements.

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Les matériaux conjugués sont de nos jours très utilisés dans de nombreuses applications ainsi qu’en recherche. L’enchainement des liaisons π-σ-π permet la délocalisation des électrons et d’obtenir différentes propriétés comme la conduction, la fluorescence, la chélation, etc. Ainsi, de nombreux dispositifs utilisent ces caractéristiques en vue d’obtenir de nouveaux matériaux révolutionnaires comme les cellules solaires, les transistors à effet de champs, les dispositifs électrochromiques, etc.. Les dispositifs électrochromiques font partie des dispositifs en vogue. Ils sont capables de changer de couleur selon le potentiel électrique appliqué. Ils se distinguent par la simplicité du mode de conception et ils ne nécessitent pas de fonctionner dans des conditions drastiques comme une atmosphère contrôlée. Ces dispositifs sont actuellement utilisés et commercialisés comme fenêtre intelligente, camouflage, papier électronique et carte de visite personnalisée pour n’en nommer que quelques-uns. Deux propriétés sont essentielles pour que des composés puissent être utilisés dans ces familles de dispositifs : la réversibilité à l’oxydation et la stabilité à l’air et à la lumière. Dans le groupe de recherche du professeur W.G. Skene, l’axe principal de recherche est basé sur la conception de nouveaux matériaux conducteurs comportant des liaisons azométhines. Les principaux matériaux étudiés sont des dérivés de thiophènes et de fluorènes. De précédents résultats ont montré que plusieurs produits issus de la réaction de condensation entre les dérivés du 2,5-diaminothiophène et de thiophènes diformylés menaient à des produits possédant d’excellentes propriétés photophysiques et électrochimiques. C’est en partant de ces résultats encourageants qu’il a été choisi de synthétiser une nouvelle famille de produits avec un nouveau substrat fonctionnalisé. Ce dernier possède d’excellentes propriétés électrochimiques et photophysiques : la triphénylamine. Deux familles de produits ont été synthétisées qui possèdent toutes comme cœur une triphénylamine. Cette dernière a été modifiée de façon à créer une, deux ou trois liaisons azométhines avec différents thiophènes. Deux dérivés du thiophène ont été choisis afin d’étudier l’influence des groupements donneurs et accepteurs sur ces nouveaux types de composés encore jamais étudiés. Les résultats des différentes synthèses et analyses ont été effectués par RMN, spectrométrie de masse, spectrométrie d’absorbance UV-Visible, fluorescence et voltampérométrie cyclique sont rapportées dans le présent recueil.

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Les polymères semi-conducteurs semicristallins sont utilisés au sein de diodes électroluminescentes, transistors ou dispositifs photovoltaïques organiques. Ces matériaux peuvent être traités à partir de solutions ou directement à partir de leur état solide et forment des agrégats moléculaires dont la morphologie dicte en grande partie leurs propriétés optoélectroniques. Le poly(3-hexylthiophène) est un des polymères semi-conducteurs les plus étudiés. Lorsque le poids moléculaire (Mw) des chaînes est inférieur à 50 kg/mol, la microstructure est polycristalline et composée de chaînes formant des empilements-π. Lorsque Mw>50 kg/mol, la morphologie est semicristalline et composée de domaines cristallins imbriquées dans une matrice de chaînes amorphes. À partir de techniques de spectroscopie en continu et ultrarapide et appuyé de modèles théoriques, nous démontrons que la cohérence spatiale des excitons dans ce matériau est légèrement anisotrope et dépend de Mw. Ceci nous permet d’approfondir la compréhension de la relation intime entre le couplage inter et intramoléculaire sur la forme spectrale en absorption et photoluminescence. De plus, nous démontrons que les excitations photogénérées directement aux interfaces entre les domaines cristallins et les régions amorphes génèrent des paires de polarons liés qui se recombinent par effet tunnel sur des échelles de temps supérieures à 10ns. Le taux de photoluminescence à long temps de vie provenant de ces paires de charges dépend aussi de Mw et varie entre ∼10% et ∼40% pour les faibles et hauts poids moléculaires respectivement. Nous fournissons un modèle permettant d’expliquer le processus de photogénération des paires de polarons et nous élucidons le rôle de la microstructure sur la dynamique de séparation et recombinaison de ces espèces.

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Pyrroles are found in various natural products and in the chemical composition of certain drugs because of their interesting biological properties. Lipitor, Tolmetin and Amtolmetin are examples of drugs with 1,2,5-substituted pyrroles in their composition, in which biological activities have been certified. Moreover, pyrroles are used as precursors of semiconductor polymers, oligomers and dendrimers useful for the synthesis of electroluminescent materials used in devices, such as organic light-emitting diodes, field-effect transistors, solar and organic photovoltaic cells. We are interested in conjugated polymers based on pyrrole due to their optical properties, electrochemical and the conductivity produced by electron delocalization along their carbon chains. The overall objective of the work presented in this thesis is the synthesis of new molecules based on pyrrole for studying their electronic and electrochemical properties as well for the synthesis of conjugated polymers. Initially, we performed the synthesis of 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes, which may serve as precursors for the synthesis of conjugated dendrimers. Their synthesis was made in three steps starting from trimethyl 1,3,5-benzene-tricarboxylate which was converted to 1,3,5-tri-(pent-4-enoyl)benzene using vinylmagnesium bromide in a Grignard reaction catalyzed by copper cyanide. The olefins of 1,3,5-tri-(pent-4-enoyl)benzene were oxidized to produce 1,3,5-tri-(4-oxopentanoyl)benzene using a modified protocol of the Tsuji-Wacker reaction. Subsequent, Paal-Knorr condensation reactions on 1,3,5-tri-(4-oxopentanoyl)benzene with different amines were used to synthesize 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes with different N-substituents in yields between 44 and 60%. Incomplete reaction of vinylmagnesium bromide with trimethyl 1,3,5-benzenetricarboxylate gave the methyl-3,5-di(pent-4-enoyl)benzoate, which was converted to methyl-3,5-dipyrrolylbenzoate following the reaction of Tsuji- Wacker and Paal-Knorr with yields between 30 and 60%. The photochemical and electrochemical properties of the 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes and methyl-3,5-dipyrrolylbenzoates were studied in collaboration with the research group of professor William Skene. The results have shown that both types of pyrrole have potential for the synthesis of conjugated polymers and dendrimers used in the manufacture of electroluminescent materials. Following these encouraging results, we performed the synthesis of 6,12-dimethyl-1,5-dipyrrolediazocane. Methyl N-(Boc)-β-alaninate was converted to its corresponding homoallylic ketone, which was oxidized to N-(Boc)aminoheptan-3,6-dione. The Paal-Knorr condensation between N-(Boc)aminoheptan-3,6-dione and aminoheptan-3,6-dione hydrochloride gave 6,12-dimethyl-1,5-dipyrrolediazocane in 17% yield. In sum, we have synthesized and characterized seven new molecules, six of them having photochemical and electrochemical properties interesting for the synthesis of conjugated polymers and dendrimers. The latter offering potential as precursor for the conception of compounds of therapeutic interest.

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The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

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In recent years,photonics has emerged as an essential technology related to such diverse fields like laser technology,fiber optics,communication,optical signal processing,computing,entertainment,consumer electronics etc.Availabilities of semiconductor lasers and low loss fibers have also revolutionized the field of sensor technology including telemetry. There exist fiber optic sensors which are sensitive,reliable.light weight and accurate devices which find applications in wide range of areas like biomedicine,aviation,surgery,pollution monitoring etc.,apart from areas in basic sciences.The present thesis deals with the design,fabrication and characterization of a variety of cost effective and sensitive fiber optic sensors for the trace detetction of certain environment pollutants in air and water.The sensor design is carried out using the techniques like evanescent waves,micro bending and long period gratings.

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The present thesis work focuses on hole doped lanthanum manganites and their thin film forms. Hole doped lanthanum manganites with higher substitutions of sodium are seldom reported in literature. Such high sodium substituted lanthanum manganites are synthesized and a detailed investigation on their structural and magnetic properties is carried out. Magnetic nature of these materials near room temperature is investigated explicitly. Magneto caloric application potential of these materials are also investigated. After a thorough investigation of the bulk samples, thin films of the bulk counterparts are also investigated. A magnetoelectric composite with ferroelectric and ferromagnetic components is developed using pulsed laser deposition and the variation in the magnetic and electric properties are investigated. It is established that such a composite could be realized as a potential field effect device. The central theme of this thesis is also on manganites and is with the twin objectives of a material study leading to the demonstration of a device. This is taken up for investigation. Sincere efforts are made to synthesize phase pure compounds. Their structural evaluation, compositional verification and evaluation of ferroelectric and ferromagnetic properties are also taken up. Thus the focus of this investigation is related to the investigation of a magnetoelectric and magnetocaloric application potentials of doped lanthanum manganites with sodium substitution. Bulk samples of sodium substituted lanthanum manganites. Bulk samples of sodium substituted lanthanum manganites with Na substitution ranging from 50 percent to 90 percent were synthesized using a modified citrate gel method and were found to be orthorhombic in structure belonging to a pbnm spacegroup. The variation in lattice parameters and unit cell volume with sodium concentration were also dealt with. Magnetic measurements revealed that magnetization decreased with increase in sodium concentrations.

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Polymers with conjugated π-electron backbone display unusual electronic properties such as low energy optical transition, low ionization potentials, and high electron affinities. The properties that make these materials attractive include a wide range of electrical conductivity, mechanical flexibility and thermal stability. Some of the potential applications of these conjugated polymers are in sensors, solar cells, field effect transistors, field emission and electrochromic displays, supercapacitors and energy storage. With recent advances in the stability of conjugated polymer materials, and improved control of properties, a growing number of applications are currently being explored. Some of the important applications of conducting polymers include: they are used in electrostatic materials, conducting adhesives, shielding against electromagnetic interference (EMI), artificial nerves, aircraft structures, diodes, and transistors.

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Das Ziel der vorliegenden Arbeit war die Synthese und Charakterisierung von donor-funktionalisierten Spiro-Perylencarboximiden, welche für den Einsatz in optoelektronischen Bauelementen wie z.B. organischen Phototransistoren, Feldeffekttransistoren oder Solarzellen vorgesehen sind. Die donorfunktionalisierten Spiro-Perylencarboximide stellen kovalent gebundene Donor-Akzeptor-Verbindungen dar, die unter geeigneter Belichtung einen ladungsgetrennten Zustand bilden können. Die Verbindungen wurden aus unterschiedlichen Spiroamin- und Perylenanhydrid-Edukten synthetisiert, die im Baukastenprinzip zu den entsprechenden Zielverbindungen umgesetzt wurden. Mittels unterschiedlicher Charakterisierungsmethoden (z.B. DSC, TGA, CV, Absorptions- und Fluoreszenzmessungen) wurden die Eigenschaften der neuartigen Zielverbindungen untersucht. Im Rahmen der Arbeit wurden vier neue Spiroamin-Edukte erstmalig synthetisiert und charakterisiert. Sie wurden durch Reduktion aus den bisher noch nicht beschriebenen Nitroverbindungen bzw. mittels Pd-katalysierter Kreuzkupplung (Hartwig-Buchwald-Reaktion) aus einer halogenierten Spiroverbindung erhalten. Als Perylenanhydrid-Edukt wurde erstmals eine perfluorierte Perylenanhydrid-Imid-Verbindung hergestellt. Aus den Spiroamin- und Perylenanhydrid-Edukten wurden insgesamt neun neue, donorfunktionalisierte Spiro-Perylencarboximide synthetisiert. Zusätzlich wurden sechs neuartige Spiro-Perylencarboximide ohne Diphenylamin-Donor hergestellt, die als Vergleichsverbindungen dienten. Die donorfunktionalisierten Spiro-Perylencarboximide besitzen eine Absorption im UV- und sichtbaren Spektralbereich, wobei hohe Extinktionskoeffizienten erreicht werden. Die Verbindungen zeigen in verdünnter Lösung (sowohl in polaren als auch in unpolaren Lösungsmitteln) eine Fluoreszenzquantenausbeute unter 1 %, was auf einen effizienten Ladungstransfer zurückzuführen ist. Alle donorfunktionalisierten Spiro-Perylencarboximide zeigen in den CV-Messungen reversibles Verhalten. Mittels CV-Messungen und optischer Methode konnten die HOMO- und LUMO-Lagen der jeweiligen Molekülhälften berechnet und das Fluoreszenzverhalten der Verbindungen erklärt werden. Ebenso konnten die Auswirkungen von unterschiedlichen Substituenten auf die jeweiligen HOMO-/LUMO-Lagen näher untersucht werden. Die durchgeführten DSC- und TGA-Untersuchungen zeigen hohe morphologische und thermische Stabilität der Verbindungen, wobei Glasübergangstemperaturen > 211 °C, Schmelztemperaturen > 388 °C und Zersetzungstemperaturen > 453 °C gemessen wurden. Diese Werte sind höher als die bisher in der Literatur für ähnliche spiroverknüpfte Verbindungen berichteten. Als besonders interessant haben sich die unsymmetrischen donorfunktionalisierten Spiro-Perylencarboximide herausgestellt. Sie zeigen hohe Löslichkeit in gängigen Lösungsmitteln, sind bis zu einer Molmasse < 1227 g/mol aufdampfbar und bilden stabile, amorphe Schichten.

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Bauchspeicheldrüsenkrebs ist die vierthäufigste Krebstodesursache in Deutschland. Durch die tiefe Lage des Organs im Körperinneren und das späte Auftreten von Symptomen erfolgt die Diagnose meist zu einem sehr späten Zeitpunkt, zu dem eine Resektion des Tumors in 80% der Fälle nicht mehr möglich ist. Die Hälfte der Patienten verstirbt bereits im ersten Jahr nach Diagnosestellung. Nach heutiger Erkenntnis entwickeln sich Adenokarzinome der Bauchspeicheldrüse über schrittweise histologische Veränderungen, die sogenannten PanIN Läsionen (pancreatic intraepithelial neoplasia). Bis heute fehlen jedoch klinisch einsetzbare Parameter für die Früherkennung des Karzinoms und seiner Vorstufen. Bisher ist nicht vollständig geklärt, welche molekularen Veränderungen hierbei eine wesentliche Rolle spielen. Das Ziel der vorliegenden Arbeit ist, die molekular- und zytogenetische Mutationsinzidenz und -Sequenz im Verlauf der neoplastischen Progression in der PanIN-Sequenz aufzuklären. Unter Anwendung der Fluoreszenz-in-situ-Hybridisierung (FISH) wird weiterführend die Frage beantwortet, ob sich der Nachweis von zytogenetischen Veränderungen in Zellen, die endoskopisch aus dem Pankreassekret gewonnen wurden, als neuartiger Ansatz für eine Frühdiagnostik nutzen lassen. Die molekulargenetischen Analysen zeigen, dass die PanIN-Läsionen aus Geweben mit chronischer Pankreatitis denen aus Geweben mit Karzinomen gleichzusetzen sind. Veränderungen in der Anzahl einzelner Chromosomen, sowie Basenmutationen finden sich bereits in den frühesten Gangläsionen. Die diffuse Verteilung von Genmutationen lässt einen mutagenen Feldeffekt vermuten, in welchem endogene (z.B. Pankreasenzyme, oxidativer Stress) und/oder exogene (z.B. Nikotin, Alkohol) Noxen auf verschiedene Pankreasgänge während einer langen Zeit einwirken. Auf der Basis der erhaltenen Daten kann angenommen werden, dass die prä-neoplastischen Läsionen in Geweben mit chronischer Pankreatitis eine Progression durchlaufen, in der sich sporadische Defekte wie Basenmutationen und Mitosefehler (Aneuplodien) akkumulieren. Die biologische Relevanz für die Tumorentstehung sollte jedoch immer im klinischen Kontext betrachtet werden. In Kombination mit weiteren Parametern (z.B. Alter, Dauer der Pankreatitis) könnte dies eine Möglichkeit bieten, das Risiko für die Entstehung eines Karzinoms individuell zu bestimmen und somit Patienten frühzeitig genug vor der Manifestation eines Tumors einer (Teil-)Resektion des Organs zuzuführen.

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Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1−xN1−x alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C (x < 0.25); and (b) the electronic structure of C2xB1−xN1−x can be further tuned not only with composition x, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C2xB1−xN1−x alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.