Importance of bearing porosity in engineering and natural lubrication

The multilamellar structure of phospholipids, i.e. the surface amorphous layer (SAL) that covers the natural surface of articular cartilage, and hexagonal boron nitride (h-BN) on the surface of metal porous bearings are two prominent examples of the family of layered materials that possess the ability to deliver lamellar lubrication. This chapter presents the friction study that was conducted on the surfaces of cartilage and the metal porous bearing impregnated with oil (first generation) and with oil + h-BN (second generation). The porosity of cartilage is around 75% and those of metal porous bearings were 15–28 wt%. It is concluded that porosity is a critical factor in facilitating the excellent tribological properties of both articular cartilage and the porous metal bearings studied.

Low-density three-dimensional foam using self-reinforced hybrid two-dimensional atomic layers

Low-density nanostructured foams are often limited in applications due to their low mechanical and thermal stabilities. Here we report an approach of building the structural units of three-dimensional (3D) foams using hybrid two-dimensional (2D) atomic layers made of stacked graphene oxide layers reinforced with conformal hexagonal boron nitride (h-BN) platelets. The ultra-low density (1/400 times density of graphite) 3D porous structures are scalably synthesized using solution processing method. A layered 3D foam structure forms due to presence of h-BN and significant improvements in the mechanical properties are observed for the hybrid foam structures, over a range of temperatures, compared with pristine graphene oxide or reduced graphene oxide foams. It is found that domains of h-BN layers on the graphene oxide framework help to reinforce the 2D structural units, providing the observed improvement in mechanical integrity of the 3D foam structure.

Wear of coated and uncoated PCBN cutting tool used in turning and milling

This licentiate thesis has the main focus on evaluation of the wear of coated and uncoated polycrystalline cubic boron nitride cutting tool used in cutting operations against hardened steel. And to exam the surface finish and integrity of the work material used. Harder work material, higher cutting speed and cost reductions result in the development of harder and more wear resistance cutting tools. Although PCBN cutting tools have been used in over 30 years, little work have been done on PVD coated PCBN cutting tools. Therefore hard turning and hard milling experiments with PVD coated and uncoated cutting tools have been performed and evaluated. The coatings used in the present study are TiSiN and TiAlN. The wear scar and surface integrity have been examined with help of several different characterization techniques, for example scanning electron microscopy and Auger electron spectroscopy.   The results showed that the PCBN cutting tools used displayed crater wear, flank wear and edge micro chipping. While the influence of the coating on the crater and flank wear was very small and the coating showed a high tendency to spalling. Scratch testing of coated PCBN showed that, the TiAlN coating resulted in major adhesive fractures. This displays the importance of understanding the effect of different types of lapping/grinding processes in the pre-treatment of hard and super hard substrate materials and the amount and type of damage that they can create. For the cutting tools used in turning, patches of a adhered layer, mainly consisting of FexOy were shown at both the crater and flank. And for the cutting tools used in milling a tribofilm consisting of SixOy covered the crater. A combination of tribochemical reactions, adhesive wear and mild abrasive wear is believed to control the flank and crater wear of the PCBN cutting tools. On a microscopic scale the difference phases of the PCBN cutting tool used in turning showed different wear characteristics. The machined surface of the work material showed a smooth surface with a Ra-value in the range of 100-200 nm for the turned surface and 100-150 nm for the milled surface. With increasing crater and flank wear in combination with edge chipping the machined surface becomes rougher and showed a higher Ra-value. For the cutting tools used in milling the tendency to micro edge chipping was significant higher when milling the tools steels showing a higher hard phase content and a lower heat conductivity resulting in higher mechanical and thermal stresses at the cutting edge.

Grinding of hardened steels using optimized cooling

Grinding - the final machining process of a workpiece - requires large amounts of cutting fluids for the lubrication, cooling and removal of chips. These fluids are highly aggressive to the environment. With the technological advances of recent years, the worldwide trend is to produce increasingly sophisticated components with very strict geometric and dimensional tolerances, good surface finish, at low costs, and particularly without damaging the environment. The latter requirement can be achieved by recycling cutting fluids, which is a costly solution, or by drastically reducing the amount of cutting fluids employed in the grinding process. This alternative was investigated here by varying the plunge velocity in the plunge cylindrical grinding of ABNT D6 steel, rationalizing the application of two cutting fluids and using a superabrasive CBN (cubic boron nitride) grinding wheel with vitrified binder to evaluate the output parameters of tangential cutting force, acoustic emission, roughness, roundness, tool wear, residual stress and surface integrity, using scanning electron microscopy (SEM) to examine the test specimens. The performance of the cutting fluid, grinding wheel and plunge velocity were analyzed to identify the best machining conditions which allowed for a reduction of the cutting fluid volume, reducing the machining time without impairing the geometric and dimensional parameters, and the surface finish and integrity of the machined components.

Análise do processo de torneamento a quente auxiliado por resistência elétrica de quartzo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of the cutting edge micro-geometry of PCBN tools on the flank wear in orthogonal quenched and tempered turning M2 steel

Quenched and tempered high-speed steels obtained by powder metallurgy are commonly used in automotive components, such as valve seats of combustion engines. In order to machine these components, tools with high wear resistance and appropriate cutting edge geometry are required. This work aims to investigate the influence of the edge preparation of polycrystalline cubic boron nitride (PCBN) tools on the wear behavior in the orthogonal longitudinal turning of quenched and tempered M2 high-speed steels obtained by powder metallurgy. For this research, PCBN tools with high and low-CBN content have been used. Two different cutting edge geometries with a honed radius were tested: with a ground land (S shape) and without it (E shape). Also, the cutting speed was varied from 100 to 220 m/min. A rigid CNC lathe was used. The results showed that the high-CBN, E-shaped tool presented the longest life for a cutting speed of 100 m/min. High-CBN tools with a ground land and honed edge radius (S shaped) showed edge damage and lower values of the tool’s life. Low-CBN, S-shaped tools showed similar results, but with an inferior performance when compared with tools with high CBN content in both forms of edge preparation.

A Study of Nanostructures of Thin Films in B–C–N System Produced by Pulsed Laser Deposition and Nitrogen Ion-Beam-Assisted Pulsed Laser Deposition

We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C–N film deposited at 600 °C leading to large broadening of diffraction rings.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Improved mechanical properties of polymer nanocomposites incorporating graphene-like BN: Dependence on the number of BN layers

The mechanical properties of composites of polymethylmethacrylate (PMMA) with two-dimensional graphene-like boron nitride (BN) have been investigated to explore the dependence of the properties on the number of BN layers. This study demonstrates that significantly improved mechanical properties are exhibited by the composite with the fewest number of BN layers. Thus, with incorporation of three BN layers, the hardness and elastic modulus of the composite showed an increase of 125% and 130%, respectively, relative to pure PMMA. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Optical gap in carbon nitride films

In this paper we study the effect of introducing nitrogen into different carbon networks. Two kinds of carbon nitride films were deposited: (a) Using a DC-magnetron sputtering system sp2 bonded carbon nitride (a-CN) films were deposited and (b) Using a combination of filtered cathodic vacuum arc and a low-pressure N2 plasma source, N was introduced into sp3 carbon networks (ta-C), leading to the formation of a more dense CN film named ta-CN. For ta-CN films we found that the optical gap initially decreases as the N content and the sp2 fraction rises, but above a certain N quantity there is a level-off of the value, and the gap then remains constant despite further increases in the fraction and clustering of the sp2 phase. However, for a-CN films the optical gap increases with the nitrogen content. These two different trends are not easily explained using the same framework as that for carbon films, in which any decrease in the band gap is associated to an increase in the sp2 fraction or its clustering. Here we discuss the conditions that lead to high optical gap in sp2-bonded carbon nitride samples, which are clearly not associated to the presence of any crystalline super-hard phase. We also compared other differences in properties observed between the two films, such as deposition rate, infrared and Raman spectra. © 2003 Elsevier Science B.V. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.