Comment on 'processing and microstructure of single grain uranium-doped Y-Ba-Cu-O superconductor'

We comment on the paper by N Hari Babu et al. (2002 Supercond. Sci. Technol. 15 104-10) and point out misinterpretations of the chemical composition of U-bearing deposits observed in Y123. The observed small deposits are those of new compounds which do not contain Cu, rather than refined Y211 plus U, as stated by the authors. We further note that extensive literature, not quoted, is in disagreement by nearly an order of magnitude concerning the values of Pt and U doping at which the optimum value of Jc is obtained. Other related information, presently in the literature, which may be helpful to those working with this high temperature superconducting chemical system, is presented.

Improved chemical methods for extraction of fin rays from shark fins

A survey was undertaken of methods available for the extraction of fin rays from shark fins. The development of new, quicker and easier methods of processing is presented.

Quality tolerances for water for use in fish processing

A survey on the sources and quality of water used in prawn processing factories has revealed much non-uniformity in the chemical quality. An attempt has been made to study the effect of varying concentrations of chemical constituents in the water used for prawn freezing and its influence on the quality of the prawn after freezing and during cold storage. The results of the study are reported in this communication, together with recommendations on the quality tolerances for water used in fish processing industry.

Technological aspects of preservation and processing of edible shell fishes V. Cold storage changes in mussels (Mytilus edulis) and clams (Villortia [i.e. Villorita] sp.)

The changes in chemical, bacteriological and organoleptic qualities of mussels and clams during freezing and subsequent frozen storage have been studied in relation to the holding time in ice prior to freezing and the shelf-life of the product is determined.

Study on the quality of beche-de-mer in trade and shrinkage of specimens during processing

The beche-de-mer industry in India is a cent percent export oriented industry being confined to south east coast in Palk Bay and Gulf of Mannar in Tamil Nadu. Chemical quality of 180 trade samples of beche-de-mer of four sizes collected from the beche-de-mer curing centres of Ramanathapuram district was studied. Moisture ranged from 6.2 to 24.4% and sand content from 0.11 to 20.42% for all grades. Mean values of sand content are for grade 1=3.47%, grade 2=4.50%, grade 3=3.68%, grade 4=6.87%. Sodium chloride was almost constant for all grades at 5.7%. TVBN values ranged from 10 to 78.4 mg%. 44 laboratory samples of different grades were prepared following trade practice and examined for chemical quality. Mean moisture values are for grade 1=13.4%, grade 2=12.44%, grade 3=12.62%, grade 4=12.08% and mean values of sand are for grade 1=0.70%, grade 2=0.90%, grade 3=1.16%, grade 4=2.15%. The percentage of shrinkage of the animals ranged from 56% to 60% for dried beche-de-mer of 7.5 cm size and above.

High temperature processing of fish sausage 3. - Studies on some of the storage characteristics

The proximate composition of the high temperature processed fish sausage was found to be 14.56% protein, 4.65% fat, 69.14% moisture, 2.12% ash and 8.12% carbohydrate. The quality of the product during storage was assessed on the basis of the changes observed in the physical, chemical and microbiological parameters. The results of the different tests such as pH, volatile base nitrogen (VBN), trimethyl amine nitrogen (TMA-N) and jelly strength are summarized and discussed. The total bacterial load increased gradually during storage but was not proportional to the initial load.

Studies on the chemical and nutritional quality of protein powders isolated from shrimp waste

Protein powders were prepared from processing waste of prawns either by mechanically squeezing the shell and freeze drying the resultant aqueous extract or by treating the shell with 0.5% sodium hydroxide, filtering it and freeze drying the filtrate. Comparative studies on the proximate composition, amino acid profile, consumer acceptability and nutritional quality of the protein powders showed that the product prepared by freeze drying of the press liquor obtained by passing the waste through a hand operated expeller is better in all aspects studied than the product prepared by mild alkali extraction.

The parameter space of graphene chemical vapor deposition on polycrystalline Cu

A systematic study of the parameter space of graphene chemical vapor deposition (CVD) on polycrystalline Cu foils is presented, aiming at a more fundamental process rationale in particular regarding the choice of carbon precursor and mitigation of Cu sublimation. CH 4 as precursor requires H 2 dilution and temperatures ≥1000 °C to keep the Cu surface reduced and yield a high-quality, complete monolayer graphene coverage. The H 2 atmosphere etches as-grown graphene; hence, maintaining a balanced CH 4/H 2 ratio is critical. Such balance is more easily achieved at low-pressure conditions, at which however Cu sublimation reaches deleterious levels. In contrast, C 6H 6 as precursor requires no reactive diluent and consistently gives similar graphene quality at 100-150 °C lower temperatures. The lower process temperature and more robust processing conditions allow the problem of Cu sublimation to be effectively addressed. Graphene formation is not inherently self-limited to a monolayer for any of the precursors. Rather, the higher the supplied carbon chemical potential, the higher the likelihood of film inhomogeneity and primary and secondary multilayer graphene nucleation. For the latter, domain boundaries of the inherently polycrystalline CVD graphene offer pathways for a continued carbon supply to the catalyst. Graphene formation is significantly affected by the Cu crystallography; i.e., the evolution of microstructure and texture of the catalyst template form an integral part of the CVD process. © 2012 American Chemical Society.

Adapting data processing to compare model and experiment accurately: A discrete element model and magnetic resonance measurements of a 3d cylindrical fluidized bed

Discrete element modeling is being used increasingly to simulate flow in fluidized beds. These models require complex measurement techniques to provide validation for the approximations inherent in the model. This paper introduces the idea of modeling the experiment to ensure that the validation is accurate. Specifically, a 3D, cylindrical gas-fluidized bed was simulated using a discrete element model (DEM) for particle motion coupled with computational fluid dynamics (CFD) to describe the flow of gas. The results for time-averaged, axial velocity during bubbling fluidization were compared with those from magnetic resonance (MR) experiments made on the bed. The DEM-CFD data were postprocessed with various methods to produce time-averaged velocity maps for comparison with the MR results, including a method which closely matched the pulse sequence and data processing procedure used in the MR experiments. The DEM-CFD results processed with the MR-type time-averaging closely matched experimental MR results, validating the DEM-CFD model. Analysis of different averaging procedures confirmed that MR time-averages of dynamic systems correspond to particle-weighted averaging, rather than frame-weighted averaging, and also demonstrated that the use of Gaussian slices in MR imaging of dynamic systems is valid. © 2013 American Chemical Society.

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition

The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Multilayer InGaN/GaN quantum dots (QDs) were grown on sapphire substrates through a three-dimensional growth mode, which was initiated by a special passivation processing introduced into the normal growth procedure. Surface morphology and photoluminescence properties of QDs with different stacking periods (from one to four) were investigated. The temperature dependences of the PL peak energies were found to show a great difference between two-layer and three-layer QDs. The fast redshift and the reversed sigmoidal temperature dependences of the PL energies for the former were attributed to the thermally activated carrier transfer from small to large dots. However, the increase of both the dot size and the spatial space among dots with the growing stacking periods reduced the carrier escape and retrapping. (C) 2004 Elsevier B.V. All rights reserved.

Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic Force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.

Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition

A new alternative method to grow the relaxed Ge0.24Si0.76 layer with a reduced dislocation density by ultrahigh vacuum chemical vapor deposition is reported in this paper. A 1000-Angstrom Ge0.24Si0.76 layer was first grown on a Si(100) substrate. Then a 500-Angstrom Si layer and a subsequent 5000-Angstrom Ge0.24Si0.76 overlayer followed. All these three layers were grown at 600 degrees C. After being removed from the growth system to air, the sample was first annealed at 850 degrees C for 30 min, and then was investigated by cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy. It is shown that the 5000-Angstrom Ge0.24Si0.76 thick over layer is perfect, and most of the threading dislocations are located in the embedded thin Si layer and the lower 1000-Angstrom Ge0.24Si0.76 layer. The relaxation ratio of the over layer is deduced to be 0.8 from Raman spectroscopy.

Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1)

The effect of rapid thermal annealing (RTA) in a Nz ambient up to 900 degrees C has been investigated for GaN films grown on sapphire(0 0 0 1) substrates. Raman spectra, X-ray diffractometry and Hall-effect studies were performed for this purpose. The Raman spectra show the presence of the E-2 (high) mode and a shift in the wave number of this mode with respect to the annealing processing. This result suggests the presence and relaxation of residual stress due to thermal expansion misfit in the films which are confirmed by X-ray measurements and the structure quality of GaN epilayer was improved. Furthermore, the electron mobility increased at room temperature with respect to decrease of background electron concentration after RTA. (C) 1998 Elsevier Science B.V. All rights reserved.