Solubilities of Pb+2, Bi+3, Sb+3 and Cu+1 sulphides in (NaCl KCl Na2S) melts

Solubilities of common metal sulfides have been determined in the (NaCl+KCl) eutectic melt with and without Na2S. A novel gas-phase equilibrium technique has been used for PbS, Bi2S3, and So2S3, and an improved liquid phase equilibrium technique for Cu2S, which eliminates the errors due to physical entrapment of the sulfide phase and segregation on quenching, enabling precise measurements to be made. Solubilities in the (NaCl+KCl) eutectic melt were determined as a function of temperature in the rante 700° to 950°C, and were found to be small. The partial molar heats of mixing of the sulfides in the eutectic melt have been calculated from the solubility measurements, to be 13.3, 31.4, 37.1, and 49.0 kcal for PbSs), Sb2S2(l), and Cu2S(s), respectively. Sodium sulfide addition was observed to enhance these solubilities, the effect being largest for Cu2S followed by Sb2S3, Bi2S3, and PbS. This effect is explained qualitatively. It was observed that PbS and Sb2S3 obey Henry's law up to saturation in (NaCl+KCl+Na2S) melts.

State of bismuth in BaBiO3 and BaBi1-xPbxO3: Bi 4f photoemission and Bi L3 absorption spectroscopic studies

The 2p 6d feature in the Bi L3 spectra has different energies in the semiconducting (0.0≤x<0.7) and the superconducting (x=0.75) compositions of BaBi1−xPbxO3. The Bi 4f core level spectrum shows distinct features ascribable to Bi III and Bi V in BaBiO3 and in the semiconducting compositions; the width of the 4f peaks is also considerably larger in these compositions compared to that in BaBi0.25Pb0.75O3, which shows a single sharp Bi 4f feature.

Photoluminescence study of mixed doped Ge-Se-In-Bi glasses

Photoluminescence studies, carried out using the Fourier Transform method rather than the conventional monochromator-dispersion method,are reported on glassy samples of indium-bismuth mixed doped Ge (10) Se(90-x-y) In (x) Bi (y) system (x,y = 5,10). The amorphous Bi2Se3 is found to be n-type like the crystalline counterpart. The possible contributions from microscopic cluster-level phase separation of Bi2Se3 and from the defects to the change in conductivity from p- to n- typein this system is discussed. The similar situation in related systems is also pointed out.

Thermal management using the bi-disperse porous medium approach

Thermal management of distributed electronics similar to data centers is studied using a bi-disperse porous medium (BDPM) approach. The BDPM channel comprises heat generating micro-porous square blocks, separated by macro-pores. Laminar forced convection cooling fluid of Pr = 0.7 saturates both the micro- and macro-pores. Bi-dispersion effect is induced by varying the macro-pore volume fraction phi(E), and by changing the number of porous blocks N-2, both representing re-distribution of the electronics. When 0.2 <= phi(E) <= 0.86, the heat transfer No is enhanced twice (from similar to 550 to similar to 1100) while the pressure drop Delta p* reduces almost eightfold. For phi(E) < 0.5, No reduces quickly to reach a minimum at the mono -disperse porous medium (MDPM) limit (phi(E) -> 0). Compared to N-2 = 1 case, No for BDPM configuration is high when N-2 >> 1, i.e., the micro-porous blocks are many and well distributed. The Nu increase with Re changes from non-linear to linear as N-2 increases from 1 to 81, with corresponding insignificant pumping power increase. (C) 2011 Elsevier Ltd. All rights reserved.

Inter-domain interactions influence the stability and catalytic activity of the bi-domain protein tyrosine phosphatase PTP99A

The two protein tyrosine phosphatase (PTP) domains in bi-domain PTPs share high sequence and structural similarity. However, only one of the two PIP domains is catalytically active. Here we describe biochemical studies on the two tandem PTP domains of the bi-domain PTP, PTP99A. Phosphatase activity, monitored using small molecule as well as peptide substrates, revealed that the inactive (D2) domain activates the catalytic (D1) domain. Thermodynamic measurements suggest that the inactive D2 domain stabilizes the bi-domain (D1-D2) protein. The mechanism by which the D2 domain activates and stabilizes the bi-domain protein is governed by few interactions at the inter-domain interface. In particular, mutating Lys990 at the interface attenuates inter-domain communication. This residue is located at a structurally equivalent location to the so-called allosteric site of the canonical single domain PIP, PTP1B. These observations suggest functional optimization in bi-domain PTPs whereby the inactive PTP domain modulates the catalytic activity of the bi-domain enzyme. (C) 2012 Elsevier B.V. All rights reserved.

Effect of Thickness on The Optical Properties Change in Bi/As2S3 Bilayer Thin Films

Bilayer thin films of Bi/As2S3 were prepared from Bi and As2S3 by thermal evaporation technique under high vacuum. We have prepared three bilayer films of 905nm, 910nm and 915nm thickness with with As2S3 as bottom layer (900nm) and Bi as top layer (5,10,15 nm). We have compared the optical changes due to the thickness variation of Bi layer on As2S3 film. The changes were characterized by FTIR and XPS techniques.

Raman & Infrared Study of Bi Filled Co4Sb12

CoSb3 skutterudites are established thermoelectric materials in the 500-800K temperature range. Undoped and Bi filled CoSb3 samples were synthesized by induction melting-annealing process and phase confirmation done by X-Ray diffraction. The role of bismuth as a filler in CoSb3 was investigated by Raman and far infrared reflectance study. It was found that bismuth strengthens Sb vibrations, and can potentially scatter Sb related acoustic phonons effectively. As a result substantial reduction in thermal conductivity may be possible with proper control of Bi filling.

Optical properties change with the addition and diffusion of Bi to As2S3 in the Bi/As2S3 bilayer thin film

The role of Bi layer (thickness similar to 7 nm) on As2S3 film was extensively studied for different optical applications in which Bi (top layer) as active and diffusing layer and As2S3 as barrier (matrix) layer. Bilayer thin films of Bi/As2S3 were prepared from Bi and As2S3 by thermal evaporation technique under high vacuum. The decrease of optical band gap with the addition of Bi to As2S3 has been explained on the basis of density of states and the increase in disorder in the system. It was found that the efficient changes of optical parameters (transmission, optical band gap, refraction) could be realized due to the photo induced diffusion activated by the focused 532 nm laser irradiation and formation of different bonds. The diffusion of Bi into As2S3 matrix increases the optical band gap producing photo bleaching effect. The changes were characterised by different experimental techniques. (C) 2012 Elsevier B.V. All rights reserved.

Thermoelectric properties of Bi-added Co4Sb12 skutterudites

Void filling in (I) Bi-x-added Co4Sb12 or (II) Sb/Bi substitution of Co4Sb12-xBix has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb3 skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi0.75Co4Sb12, and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co4Sb12.

Comparison of one cycle control of charge and current for bi-directional boost rectifiers

Classical control and one cycle control of current are popular methods used to modulate pulses in active rectifiers for ac-dc power conversion. One cycle control has lower control complexity and can be implemented using linear analog circuits when compared with the classical approach. However, it also suffers from problems such as instability and offsets in current that is severe at light load conditions. A control strategy for bidirectional boost rectifiers based on one cycle control of charge is proposed for that overcomes these limitations. The integral of sensed current, which represents charge, is compared with a non-linear carrier, which is modified for ac-dc power conversion. This generates the gating signals for the switching devices. The modifications required for the control law governing one cycle control of charge is derived in the paper. Detailed simulation studies are carried out to compare one cycle control of current with the proposed method for ac-dc power conversion, which are validated on a laboratory hardware prototype.

Anomalous polarization in the antiferroelectric-ferroelectric phase coexistence state in PbZrO3-Bi(Mg1/2Ti1/2)O-3

The ferroelectric system (1-x)PbZrO3-(x)Bi(Mg1/2Ti1/2)O-3 has been investigated as a function of composition, temperature, and electric field by x-ray powder diffraction, dielectric, and ferroelectric measurements. Within the solubility limit (x similar to 0.25), the system evolves from an orthorhombic-antiferroelectric to rhombohedral-ferroelectric state through a phase coexistence region. The highest polarization was found not for the composition exhibiting a pure ferroelectric state, but for a composition x = 0.15 exhibiting ferroelectric + antiferroelectric phase coexistence close to the rhombohedral phase boundary. Electric poling of the equilibrium two-phase state led to irreversible enhancement in the rhombohedral phase fraction suggesting that the enhanced polarization is related to the enhanced polarizability of the lattice due to first order criticality as in ferroelectric-ferroelectric morphotropic phase boundary systems. (C) 2013 AIP Publishing LLC.

CFD Analysis of two phase flow with a prediction of torque demand of a Bi-lobe rotor of a mixing chamber

An attempt to study the fluid dynamic behavior of two phase flow comprising of solid and liquid with nearly equal density in a geometrical case that has an industrial significance in theareas like processing of polymers, food, pharma ceutical, paints. In this work,crystalline silica is considered as the dispersed medium in glycerin. In the CFD analysis carried out,the two phase components are considered to be premixed homogeneously at the initial state. The flow in a cylinder that has an axially driven bi-lobe rotor, a typical blender used in polymer industry for mixing or kneading to render the multi-component mixture to homogeneous condition is considered. A viscous, incompressible, isothermal flow is considered with an assumption that the components do not undergo any physical change and the solids are rigid and mix in fully wetting conditions. Silica with a particle diameter of 0.4 mm is considered and flow is analyzed for different mixing fractions. An industry standard CFD code is used for solving 3D-RANS equations. As the outcome of the study the torque demand by the bi-lobe rotor for different mixture fractions which are estimated show a behavioral consistency to the expected physical phenomena occurring in the domain considered.

Note on modelling directionality in piezoresistivity

When computing the change in electrical resistivity of a piezoresistive cubic material embedded in a deforming structure, the piezoresistive and the stress tensors should be in the same coordinate system. While the stress tensor is usually calculated in a coordinate system aligned with the principal axes of a regular structure, the specified piezoresistive coefficients may not be in that coordinate system. For instance, piezoresistive coefficients are usually given in an orthogonal cartesian coordinate system aligned with the <100> crystallographic directions and designers sometimes deliberately orient a crystallographic direction other than <100> along the principal directions of the structure to increase the gauge factor. In such structures, it is advantageous to calculate the piezoresistivity tensor in the coordinate system along which the stress tensors are known rather than the other way around. This is because the transformation of stress will have to be done at every point in the structure but piezoresistivity tensor needs to be transformed only once. Here, using tensor transformation relations, we show how to calculate the piezoresistive tensor along any arbitrary Cartesian coordinate system from the piezoresistive coefficients for the <100> coordinate system. Some of the software packages that simulate the piezoresistive effect do not have interfaces for calculation of the entire piezoresistive tensor for arbitrary directions. This warrants additional work for the user because not considering the complete piezoresisitive tensor can lead to large errors. This is illustrated with an example where the error is as high as 33%. Additionally, for elastic analysis, we used hybrid finite element formulation that estimates stresses more accurately than displacement-based formulation. Therefore, as shown in an example where the change in resistance can be calculated analytically, the percentage error of our piezoresistive program is an order of magnitude lower relative to displacement-based finite element method.