Effect of citrate ions on the electrochemical behaviour of low-carbon steel in borate buffer solutions

The electrochemical behaviour of cold-rolled low carbon steel was studied on both active and passive potential regions in borate buffer solutions with and without the addition of sodium citrate (NaCit). In the active region anodic charges increased significantly and RCT values decreased with citrate, due to the formation of soluble complexes. In the passive potential region the film formed at +0.4 V in borate buffer solution with and without 0.010 M NaCit is probably enriched by Fe3O4 oxide, while films formed at +0.8 V are probably enriched by gamma-Fe2O3. The equivalent circuit [R-s(R(CT)Q)] fitted all experimental impedance data. (C) 2003 Elsevier Ltd. All rights reserved.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Changes on iron electrode surface during hydrogen permeation in borate buffer solution

Hydrogen interaction with oxide films grown on iron electrodes at open circuit potential (E-oc) and in the passive region (+0.30 V-ECS) was studied by chronopotentiometry, chronoamperometry and electrochemical impedance spectroscopy techniques. The results were obtained in deaerated 0.3 mol L-1 H3BO3 + 0.075 mol L-1 Na2B4O7 (BB, pH 8.4) solution before, during and after hydrogen permeation. The iron oxide film modification was also investigated by means of in situ X-ray absorption near-edge spectroscopy (XANES) and scanning electrochemical microscopy (SECM) before and during hydrogen permeation. The main conclusion was that the passive film is reduced during the hydrogen diffusion. The hydrogen permeation stabilizes the iron surface at a potential close to the thermodynamic water stability line where hydrogen evolution can occur. The stationary condition required for the determination of the permeation parameters cannot be easily attained on iron surface during hydrogen permeation. Moreover, additional attention must be paid when obtaining the transport parameters using the classical permeation cell. (c) 2007 Elsevier Ltd. All rights reserved.

Adsorption of silanes bearing nitrogenated Lewis bases on SiO 2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.

Turning of compacted graphite iron using commercial tiN coated Si 3N4 under dry machining conditions

Due to their high hardness and wear resistance Si3N4 based ceramics are one of the most suitable cutting tool materials for machining hardened materials. Therefore, their high degree of brittleness usually leads to inconsistent results and sudden catastrophic failures. Improvement of the functional properties these tools and reduction of the ecological threats may be accomplished by employing the technology of putting down hard coatings on tools in the state-of-the-art PVD processes, mostly by improvement of the tribological contact conditions in the cutting zone and by eliminating the cutting fluids. However in this paper was used a Si3N4 based cutting tool commercial with a layer TiN coating. In this investigation, the performance of TiN coating was assessed on turning used to machine an automotive grade compacted graphite iron. As part of the study were used to characterise the performance of cutting tool, flank wear, temperature and roughness. The results showed that the layer TiN coating failed to dry compacted graphite iron under aggressive machining conditions. However, using the measurement of flank wear technique, the average tool life of was increased by VC=160 m/min.The latter was also observed using a toolmakers microscope and scanning electron microscopy (SEM).

On the electrochemical behavior of Cu-16%Zn-6.5%Al alloy containing the β'-phase (martensite) in borate buffer

In this work, the electrochemical behavior of Cu-16(wt.%)Zn-6.5(wt.%)Al alloy containing the β'-phase (martensite) was studied in borate buffer solution (pH 8.4) by means of open-circuit potential (EOC), electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). The alloy EOC was -0.29 V vs. Hg/HgO/OH-, similar to that of pure copper in this medium, indicating that the processes which occur on the alloy surface are mainly governed by copper. EIS response was related to the dielectric and transmission properties of the complex oxide layer. The CVs showed peaks concerning the redox reactions for copper and zinc. These peaks were assigned to the formation and reduction of copper and zinc species. Furthermore, they showed that the copper oxidation was suppressed by the presence of zinc and aluminum in the alloy composition. The copper and zinc oxidation to form complex oxide layers and the reduction of the different metallic oxides generated in the anodic potential scan suggest that a solid state reaction could determine the metallic oxide formation. © 2013 Elsevier Ltd. All rights reserved.

Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 °C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. © 2013 Elsevier Ltd and Techna Group S.r.l.

Análise por microscopia eletrônica de varredura da “Smear layer” produzida em preparos com pontas diamantadas e pontas CVD

Neste trabalho, foi realizada análise comparativa dentinária após preparos com pontas diamantadas em alta rotação e pontas diamantadas CVD em ultrasom, associados ao condicionamento ácido em concentrações diferentes, para avaliar a quantidade de smear layer produzida e a obstrução de túbulos dentinários .Foram utilizados 30 incisivos bovinos, distribuídos em 3 grupos de 10 amostras, sendo avaliados os preparos entre si, os preparos associados ao condicionamento ácido dentinário em gel a 37%, e os preparos associados a condicionamento ácido dentinário em gel a 15%. As amostras foram analisadas através de microscopia eletrônica de varredura. Foi verificada diferença estatística entre os sistemas, sugerindo que, comparativamente, as pontas CVD em ultrssom proporcionaram formação de menor quantidade de smear layer nos três grupos, e maior quantidade de túbulos dentinários desobstruídos entre preparos e condicionamento dentinário.

Eficácia do cloridrato de tetraciclina em diversas concentrações na remoção de smear layer e exposição de fibras colágenas da superfície radicular

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Eficiência de detergentes e EDTA na remoção da smear layer de superfícies radiculares submetidas a raspagem e aplainamento: análise através da microscopia eletrônica de varredura

A remoção da smear layer é um procedimento importante para a regeneração periodontal e para o tratamento da sensibilidade dentinária. Diversos tratamentos tem sido realizados para sua remoção, porém, mostrando resultados conflitantes ou insatisfatórios. No presente estudo nos propomos a analisar através do microscópio eletrônico de varredura a eficiência dos detergentes: lauril sulfato de sódio, Plax e de mamona assim como o EDTA 24% na remoção da smear layer. Todos os produtos testados foram aplicados com bolinha de algodão, renovada a cada 30 segundos, a qual era esfregada na superfície radicular por diferentes períodos. As fotomicrografias foram analisadas através da aplicação de um índice de remoção da smear layer por três examinadores calibrados e os resultados analisados estatisticamente. De acordo com nossos resultados pudemos chegar as seguintes conclusões: 1- a instrumentação com curetas de Gracey provocou a formação da smear layer; 2- o detergente lauril sulfato de sódio não removeu a smear layer, tendo sido o pior resultado entre os detergentes testados; 3- Os detergentes Plax e de mamona mostraram resultados semelhantes entre si e superiores ao controle negativo e ao lauril sulfato de sódio, porém, não removeram a smear layer satisfatoriamente; 4- O EDTA 24% neutro mostrou ser eficiente para a remoção da smear layer.

Electrochemical kinetic study of surface layer growth on natural pyrite in acid medium

This paper presents electrochemical experiments on natural pyrite that combine potentiostatic and voltammetric techniques. X-ray microanalysis is used as an auxiliary technique. The layer growth on pyrite surface is conducted in a wide range of pH and potential range: 3.4 <= pH <= 5.9 with E = 0.80 V (versus SHE), and 0.80 V <= E <= 1.00 V with pH 4.5 (versus SHE) in acetic acid-acetate buffer. This work is unique for two reasons: (1) phenomenological model about layer growth is applied and mathematical-physic consistence is verified and (2) Meyer's hypotheses of chemical mechanism are used to explain kinetic parameters of the phenomenological model. (c) 2005 Elsevier B.V. All rights reserved.

Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Corrosion resistance of 2024 aluminum alloy coated with plasma deposited a-C:H:Si:O films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Incorporation of Ca, P, and Si on bioactive coatings produced by plasma electrolytic oxidation: The role of electrolyte concentration and treatment duration

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.