995 resultados para ZNO NANOSTRUCTURES
Resumo:
Chinese Academy of Sciences;National Science Fund for Distinguished Young Scholar 60925016;National High Technology Research and Development program of China 2009AA034101;Postdoctoral Foundation 0971050000
Resumo:
We consider the electron-hole pair confined in a simplified infinite potential. The low-lying excition states in a ZnO cylindrical nanodisk are calculated based on effective-mass theory. To further understand the optical properties, we calculate the linear optical susceptibilities chi(w) and the radiative recombination lifetime tau of excitons in a ZnO nanodisk. The exciton radiative lifetime in a cylindrical nanodisk is of the order of tens of picoseconds, which is small compared with the lifetime of bulk ZnO material. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006134]
Resumo:
Hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts were prepared by simple annealing of the polymeric precursor. Sb can promote the growth of ZnO nanobelts along the [552] direction because of the segregation of Sb dopants on the +(001) and (110) surfaces of ZnO nanobelts. Furthermore, the ordered nanoislands of toothlike ZnSb2O6 along the [001](ZnO) direction and rodlike Zn7Sb2O12 along the [110](ZnO) direction can be formed because of the match relation of the lattice and polar charges between ZnO and zinc antimonate. The incorporation of Sb in a ZnO lattice induces composition fluctuation, and the growth of zinc antimonate nanoislands on nanobelt sides induces interface fluctuation, resulting in dominance of the bound exciton transition in the room temperature near-band-edge (NBE) emission at relatively low excitation intensity. At high excitation intensity, however, Auger recombination makes photogenerated electrons release phonon and relax from the conduction band to the trap states, causing the NBE emission to gradually saturate and redshift with increasing excitation intensity. The green emission more reasonably originates from the recombination of electrons in shallow traps with doubly charged V-O** oxygen vacancies. Because a V-O** center can trap a photoactivated electron and change to a singly charged oxygen vacancy V-O* state, its emission intensity exhibits a maximum with increasing excitation intensity.
Resumo:
Based on the effective-mass model, the lower energies of the electron and the hole of ZnO/MgxZn1-xO superlattices are calculated. Because of the mismatch of the lattice constant between the ZnO well and the MgxZn1-xO barrier, piezoelectric and spontaneous polarization exist in ZnO/MgxZn1-xO superlattices and a macroscopical internal electric held is found when well width L-w >4 nm and Mg concentration x > 0.2. The parameters of ZnO/MgxZn1-xO superlattices such as lattice constant, band offset, etc. are also proposed. Through calculations, we found the internal electric field can change the lowest energies of the electron and hole to 105.4 and 85.1 meV when well width L-w up to 70 angstrom, which will influence the electronic and optical properties of ZnO/MgxZn1-xO superlattices greatly, while the Rashba effect from the internal electric field is so small that it can be neglected. The ground state exciton energies with different Mg concentration x are also calculated by variational method, our results are very close to the experimental results when Mg concentration x <= 0.3. (C) 2008 Elsevier B.V. All rights reserved.
Resumo:
Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved.
Resumo:
Gallium nitride (GaN) nanorods were synthesized by nitriding Ga2O3/ZnO films which were deposited in turn on Si (111) substrates using radio frequency (RF) magnetron sputtering system. In the nitridation process, ZnO was reduced to Zn and Zn sublimated at 950 degrees C. Ga2O3 was reduced to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods with the assistance of the sublimation of Zn. The morphology and structure of the nanorods were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The composition of GaN nanorods was studied by Fourier-transform infrared spectrophotometer (FTIR). The synthesized nanorods is hexagonal wurtzite structured. Nitridation time of the samples has an evident influence on the morphology of GaN nanorods synthesized by this method. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
Arrays of vertically well-aligned ZnO nanorod-nanowall junctions have been synthesized on an undoped ZnO-coated silicon substrate by a carbothermal reduction and vapour phase transport method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the nanostructures are well-oriented with the c-axis perpendicular to the substrate. The room temperature photoluminescence (PL) spectrum of the as-prepared ZnO nanostructure reveals a dominant near-band-edge (NBE) emission peak and a weak deep level (DL) emission, which demonstrates its good optical properties. Temperature-dependent PL spectra show that both the intensity of NBE and DL emissions increased with decreasing temperature. The NBE emission at 3.27 eV is identified to originate from the radiative free exciton recombination. The possible growth mechanism of ZnO nanorod-nanowall junctions is also proposed.
Resumo:
Zinc oxide flower-like bunches were directly synthesized on indium-doped tin oxide (ITO) glass substrates through a simple chemical bath deposition process. By adjusting precursor concentration, other morphologies ( spindles and rods) were also obtained. All of them are hexagonal and single crystalline in nature and grow along the [ 0001] crystallographic direction. The possible growth mechanisms for these nano- and microcrystals were proposed. It was revealed that both the inherent highly anisotropic structure of ZnO and the precursor concentration play crucial roles in determining final morphologies of the products. In addition, vibrational properties of ZnO crystals with different morphologies were investigated by Raman spectroscopy.
Resumo:
High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.
Resumo:
This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).
Resumo:
A facile and effective aqueous chemical synthesis approach towards well control of periodical ZnO textures in large-scale areas is reported, by which considerable adjusting of surface wettability can be realized. With the assistance of polystyrene spheres monolayer template and morphology control agent, we succeeded in preparing a series of ordered ZnO microbowls with different sag height. It was found that the contact angle could be well adjusted by changing geometry of microbowl. Such novel, ordered arrays are expected to exploit the great potentiality in waterproof or self-cleaning micro/nanodevices, and even microfluidic devices. (C) 2010 Elsevier Inc. All rights reserved.
Resumo:
Cu(OH)(2) nanowires have been synthesized by anodic oxidation of copper through a simple electrolysis process employing ionic liquid as an electrolyte. Controlling the electrochemical conditions can qualitatively modulate the lengths, amounts, and shapes of Cu(OH)(2) nanostructures. A rational mechanism based on coordination self-assembly and oriented attachment is proposed for the selective formation of the polycrystalline Cu(OH)(2) nanowires. In addition, the FeOOH nanoribbons, Ni(OH)(2) nanosheets, and ZnO nanospheres were also synthesized by this route, indicative of the universality of the electrochemical route presented herein. The morphologies and structures of the synthesized nanostructures have been characterized by transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), powder X-ray diffraction (XRD). Fourier transform infrared spectra (FT-IR), and thermogravimetric (TG). (C) 2007 Elsevier Masson SAS. All rights reserved
Resumo:
Novel 3D wurtzite ZnSe hierarchical nanostructures have been synthesized by a mild hydrothermal treatment. The as-prepared flowerlike nanostructures efficiently catalyze the photodegradation of methylene blue and ethyl violet present in aqueous solutions under UV light irradiation, exhibiting higher photocatalytic activity than the commercially available photocatalysts P25 and ZnSe microspheres. We also demonstrate that flowerlike morphology is important for the excellent photocatalytic activity.
Resumo:
The use of biofilms as nanostructure-engineering materials is discussed and exemplified using ZnO nanorods. Three examples are presented for illustration, the immobilization of ZnO-nanorod arrays on the inner wall of a polystyrene centrifuge tube using S. thermophilus, the morphological organization of ZnO "filters" using S. thermophilus. And the design and implementation of a ZnO-decorated Ag framework using E. coli.