962 resultados para Yb3 doping
Resumo:
Topological crystalline insulators (TCIs) are a new quantum state of matter in which linearly dispersed metallic surface states are protected by crystal mirror symmetry. Owing to its vanishingly small bulk band gap, a TCI like Pb0.6Sn0.4Te has poor thermoelectric properties. Breaking of crystal symmetry can widen the band gap of TCI. While breaking of mirror symmetry in a TCI has been mostly explored by various physical perturbation techniques, chemical doping, which may also alter the electronic structure of TCI by perturbing the local mirror symmetry, has not yet been explored. Herein, we demonstrate that Na doping in Pb0.6Sn0.4Te locally breaks the crystal symmetry and opens up a bulk electronic band gap, which is confirmed by direct electronic absorption spectroscopy and electronic structure calculations. Na doping in Pb0.6Sn0.4Te increases p-type carrier concentration and suppresses the bipolar conduction (by widening the band gap), which collectively gives rise to a promising zT of 1 at 856 K for Pb0.58Sn0.40Na0.02Te. Breaking of crystal symmetry by chemical doping widens the bulk band gap in TCI, which uncovers a route to improve TCI for thermoelectric applications.
Resumo:
The effect of the La3+ and Gd3+ co-doping on the structure, electric and magnetic properties of BiFeO3 (BFO) ceramics are investigated. For the compositions (x=0 and 0 <= y <= 0.15) in the perovskite structured LaxGdyBi1-xFeO3 system, a tiny residual phase of Bi2Fe4O9 is noticed. Such a secondary phase is suppressed with the incorporation of `La' content (x). The magnitude of dielectric constant (epsilon(r) increases progressively by increasing the `La' content from x=0 to 0.15 with a remarkable decrease of dielectric loss. For x=0.15, the system LaxGdyBi1-x(x+y)FeO3 exhibits highest remanent magnetization (M-r) of 0.18 emu/g and coercive magnetic field (H-c) of similar to 1 Tin the presence of external magnetic field of 9 T at 300 K. The origin of enhanced dielectric and magnetic properties of LaxGdyBil (x+y)Fe03 and the role of doping elements, La3+, Gd3+ has been discussed. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Resumo:
We have carried out dielectric and transport measurements in NdFe1-xMnxO3 (0 <= x <= 1) series of compounds and studied the variation of activation energy due to a change in Mn concentration. Despite similar ionic radii in Mn3+ and Fe3+, large variation is observed in the lattice parameters and a crossover from dynamic to static Jahn-Teller distortion is discernible. The Fe/Mn-O-Fe/Mn bond angle on the ab plane shows an anomalous change with doping. With an increase in the Mn content, the bond angle decreases until x = 0.6; beyond this, it starts rising until x = 0.8 and again falls after that. A similar trend is observed in activation energies estimated from both transport and dielectric relaxation by assuming a small polaron hopping (SPH) model. Impedance spectroscopy measurements delineate grain and grain boundary contributions separately both of which follow the SPH model. Frequency variation of the dielectric constant is in agreement with the modified Debye law from which relaxation dispersion is estimated.
Resumo:
Using a recently proposed Ginzburg-Landau-like lattice free energy functional due to Banerjee et al. (2011) we calculate the fluctuation diamagnetism of high -T-c superconductors as a function of doping, magnetic field and temperature. We analyse the pairing fluctuations above the superconducting transition temperature in the cuprates, ranging from the strong phase fluctuation dominated underdoped limit to the more conventional amplitude fluctuation dominated overdoped regime. We show that a model where the pairing scale increases and the superfluid density decreases with underdoping produces features of the observed magnetization in the pseudogap region, in good qualitative and reasonable quantitative agreement with the experimental data. In particular, we explicitly show that even when the pseudogap has a pairing origin the magnetization actually tracks the superconducting dome instead of the pseudogap temperature, as seen in experiment. We discuss the doping dependence of the `onset' temperature for fluctuation diamagnetism and comment on the role of vortex core -energy jn our model. (C) 2015 Elsevier Inc. All rights reserved.
Resumo:
Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered -rings or odd-numbered -chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.
Resumo:
Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered -rings or odd-numbered -chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.
Resumo:
Yb:LYSOLYSOLSOYSO5at%Yb:LYSO2.84W1085nm-54.5%1030-1111nm81nmYb:LYSO
Resumo:
We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.
Resumo:
We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America
Resumo:
Effective diode-pumped cw tunable laser action of a new alloyed crystal Yb:Gd(2(1-)x) Y2xSiO5 (Yb:GYSO, x = 0.5) is demonstrated for the first time. The alloyed crystal retains excellent laser properties of Gd2SiO5 (GSO), as well as the favorable growth properties and the desirable physical of Y2SiO5 (YSO). With a 5-at.% Yb: GYSO sample, we achieved 2.44 W output power at 1081.5 nm and a slope efficiency of 57%. And its laser wavelength could be tuned from 1030nm to 1089 nm. (c) 2006 Optical Society of America.
Resumo:
<p>On the materials scale, thermoelectric efficiency is defined by the dimensionless figure of merit <i>zT</i>. This value is made up of three material components in the form <i>zT = Tα<sup>2</sup>/ρκ</i>, where <i>α</i> is the Seebeck coefficient, <i>ρ</i> is the electrical resistivity, and <i>κ</i> is the total thermal conductivity. Therefore, in order to improve <i>zT</i> would require the reduction of <i>κ</i> and <i>ρ</i> while increasing <i>α</i>. However due to the inter-relation of the electrical and thermal properties of materials, typical routes to thermoelectric enhancement come in one of two forms. The first is to isolate the electronic properties and increase α without negatively affecting <i>ρ</i>. Techniques like electron filtering, quantum confinement, and density of states distortions have been proposed to enhance the Seebeck coefficient in thermoelectric materials. However, it has been difficult to prove the efficacy of these techniques. More recently efforts to manipulate the band degeneracy in semiconductors has been explored as a means to enhance <i>α</i>. </p> <p>The other route to thermoelectric enhancement is through minimizing the thermal conductivity, <i>κ</i>. More specifically, thermal conductivity can be broken into two parts, an electronic and lattice term, <i>κ</i><sub>e</sub> and <i>κ</i><sub>l</sub> respectively. From a functional materials standpoint, the reduction in lattice thermal conductivity should have a minimal effect on the electronic properties. Most routes incorporate techniques that focus on the reduction of the lattice thermal conductivity. The components that make up <i>κ</i><sub>l</sub> (<i>κ</i><sub>l</sub> = 1/3<i>Cνl</i>) are the heat capacity (<i>C</i>), phonon group velocity (<i>ν</i>), and phonon mean free path (<i>l</i>). Since the difficulty is extreme in altering the heat capacity and group velocity, the phonon mean free path is most often the source of reduction.</p> <p>Past routes to decreasing the phonon mean free path has been by alloying and grain size reduction. However, in these techniques the electron mobility is often negatively affected because in alloying any perturbation to the periodic potential can cause additional adverse carrier scattering. Grain size reduction has been another successful route to enhancing <i>zT</i> because of the significant difference in electron and phonon mean free paths. However, grain size reduction is erratic in anisotropic materials due to the orientation dependent transport properties. However, microstructure formation in both equilibrium and nonequilibrium processing routines can be used to effectively reduce the phonon mean free path as a route to enhance the figure of merit.</p> <p>This work starts with a discussion of several different deliberate microstructure varieties. Control of the morphology and finally structure size and spacing is discussed at length. Since the material example used throughout this thesis is anisotropic a short primer on zone melting is presented as an effective route to growing homogeneous and oriented polycrystalline material. The resulting microstructure formation and control is presented specifically in the case of In<sub>2</sub>Te<sub>3</sub>-Bi<sub>2</sub>Te<sub>3</sub> composites and the transport properties pertinent to thermoelectric materials is presented. Finally, the transport and discussion of iodine doped Bi<sub>2</sub>Te<sub>3</sub> is presented as a re-evaluation of the literature data and what is known today.</p>
