987 resultados para W(110), two-dimensional binary alloys, local density of states, atomic stacking sequence, anisotropy, domain wall energy


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An algorithm based on flux difference splitting is presented for the solution of two-dimensional, open channel flows. A transformation maps a non-rectangular, physical domain into a rectangular one. The governing equations are then the shallow water equations, including terms of slope and friction, in a generalized coordinate system. A regular mesh on a rectangular computational domain can then be employed. The resulting scheme has good jump capturing properties and the advantage of using boundary/body-fitted meshes. The scheme is applied to a problem of flow in a river whose geometry induces a region of supercritical flow.

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Modeling of first-dimension retention of peaks based on modulation phase and period allows reliable prediction of the modulated peak distributions generated in the comprehensive two-dimensional chromatography experiment. By application of the inverse process, it is also possible to use the profile of the modulated peaks (their heights or areas) to predict the shape and parameters of the original input chromatographic band (retention time, standard deviation, area) for the primary column dimension. This allows an accurate derivation of the firstdimension retention time (RSD 0.02%) which is equal to that for the non-modulated experiment, rather than relying upon the retention time of the major modulated peak generated by the modulation process (RSD 0.16%). The latter metric can produce a retention time that differs by at least the modulation period employed in the experiment, which displays a discontinuity in the retention time vs modulation phase plot at the point of the 180° out-ofphase modulation. In contrast, the new procedure proposed here gives a result that is essentially independent of modulation phase and period. This permits an accurate value to be assigned to the first-dimension retention. The proposed metric accounts for the time on the seconddimension, the phase of the distribution, and the holdup time that the sampled solute is retained in the modulating interface. The approach may also be based on the largest three modulated peaks, rather than all modulated peaks. This simplifies the task of assigning the retention time with little loss of precision in band standard deviation or retention time, provided that these peaks are not all overloaded in the first or second dimension.

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Sonography is an important diagnostic tool to examine the gastrointestinal tract of dogs with chronic diarrhea. Two-dimensional grayscale ultrasound parameters to assess for various enteropathies primarily focus on wall thickness and layering. Mild, generalized thickening of the intestinal wall with maintenance of the wall layering is common in inflammatory bowel disease. Quantitative and semi-quantitative spectral Doppler arterial waveform analysis can be utilized for various enteropathies, including inflammatory bowel disease and food allergies. Dogs with inflammatory bowel disease have inadequate hemodynamic responses during digestion of food. Dogs with food allergies have prolonged vasodilation and lower resistive and pulsatility indices after eating allergen-inducing foods.

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The linearized solution for the two-dimensional flow over an inlet of general form has been derived, assuming incompressible potential flow. With this theory suction forces at sharp inlet lips can be estimated and ideal inlets can be designed.

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We analyze the transport properties of a double quantum dot device with both dots coupled to perfect conducting leads and to a finite chain of N noninteracting sites connecting both of them. The interdot chain strongly influences the transport across the system and the local density of states of the dots. We study the case of a small number of sites, so that Kondo box effects are present, varying the coupling between the dots and the chain. For odd N and small coupling between the interdot chain and the dots, a state with two coexisting Kondo regimes develops: the bulk Kondo due to the quantum dots connected to leads and the one produced by the screening of the quantum dot spins by the spin in the finite chain at the Fermi level. As the coupling to the interdot chain increases, there is a crossover to a molecular Kondo effect, due to the screening of the molecule (formed by the finite chain and the quantum dots) spin by the leads. For even N the two Kondo temperatures regime does not develop and the physics is dominated by the usual competition between Kondo and antiferromagnetism between the quantum dots. We finally study how the transport properties are affected as N is increased. For the study we used exact multiconfigurational Lanczos calculations and finite-U slave-boson mean-field theory at T=0. The results obtained with both methods describe qualitatively and also quantitatively the same physics.

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We investigate an application of the method of fundamental solutions (MFS) to heat conduction in two-dimensional bodies, where the thermal diffusivity is piecewise constant. We extend the MFS proposed in Johansson and Lesnic [A method of fundamental solutions for transient heat conduction, Eng. Anal. Bound. Elem. 32 (2008), pp. 697–703] for one-dimensional heat conduction with the sources placed outside the space domain of interest, to the two-dimensional setting. Theoretical properties of the method, as well as numerical investigations, are included, showing that accurate results can be obtained efficiently with small computational cost.

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We report a more accurate method to determine the density of trap states in a polymer field-effect transistor. In the approach, we describe in this letter, we take into consideration the sub-threshold behavior in the calculation of the density of trap states. This is very important since the sub-threshold regime of operation extends to fairly large gate voltages in these disordered semiconductor based transistors. We employ the sub-threshold drift-limited mobility model (for sub-threshold response) and the conventional linear mobility model for above threshold response. The combined use of these two models allows us to extract the density of states from charge transport data much more accurately. We demonstrate our approach by analyzing data from diketopyrrolopyrrole based co-polymer transistors with high mobility. This approach will also work well for other disordered semiconductors in which sub-threshold conduction is important.

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The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

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We study electron transport through an Aharonov-Bohm (AB) interferometer with a noninteracting quantum dot in each of its arms. Both a magnetic flux phi threading through the AB ring and the Rashba spin-orbit (SO) interaction inside the two dots are taken into account. Due to the existence of the SO interaction, the electrons flowing through different arms of the AB ring will acquire a spin-dependent phase factor in the tunnel-coupling strengths. This phase factor, as well as the influence of the magnetic flux, will induce various interesting interference phenomena. We show that the conductance and the local density of states can become spin polarized by tuning the magnetic flux and the Rashba interaction strength. Under certain circumstances, a pure spin-up or spin-down conductance can be obtained when a spin-unpolarized current is injected from the external leads. Therefore, the electron spin can be manipulated by adjusting the Rashba spin-orbit strength and the structure parameters. (c) 2006 American Institute of Physics.

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Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

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We have studied the equilibrium and nonequilibrium electronic transports through a double quantum dot coupled to leads in a symmetrical parallel configuration in the presence of both the inter- and the intradot Coulomb interactions. The influences of the interdot interaction and the difference between dot levels on the local density of states (LDOS) and the differential conductance are paid special attention. We find an interesting zero-bias maximum of the differential conductance induced by the interdot interaction, which can be interpreted in terms of the LDOS of the two dots. Due to the presence of the interdot interaction, the LDOS peaks around the dot levels epsilon(i) are split, and as a result, the most active energy level which supports the transport is shifted near to the Fermi level of the leads in the equilibrium situation. (c) 2006 American Institute of Physics.

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Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm(2)/Vs and a two-dimensional electron gas (2DEG) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 Omega/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

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Density functional theory has been used to investigate the surface relaxation of Cu2O(100) and the adsorption of NO. The calculations indicate the formation of surface copper dimers on relaxation coupled with a large contraction of the spacing between the first and second layers. Local density of states for atoms in the top three layers shows that the third layer copper atoms have the greatest change in bonding character. Adsorption energies have been calculated for the N-down and O-down adsorption of NO on the Cu2O(100) surface. These indicate that N-down adsorption is favoured and that in this case NO-lattice oxygen interactions dominate the adsorbate structure. (C) 2000 Elsevier Science B.V. All rights reserved.

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The identification of nonlinear dynamic systems using radial basis function (RBF) neural models is studied in this paper. Given a model selection criterion, the main objective is to effectively and efficiently build a parsimonious compact neural model that generalizes well over unseen data. This is achieved by simultaneous model structure selection and optimization of the parameters over the continuous parameter space. It is a mixed-integer hard problem, and a unified analytic framework is proposed to enable an effective and efficient two-stage mixed discrete-continuous; identification procedure. This novel framework combines the advantages of an iterative discrete two-stage subset selection technique for model structure determination and the calculus-based continuous optimization of the model parameters. Computational complexity analysis and simulation studies confirm the efficacy of the proposed algorithm.