932 resultados para Viscosity modifying admixture
Resumo:
The twist elastic constant, K2, and the rotational viscosity coefficient, γ1, are of importance when the response lime for the in-plane switching mode is studied. Since adding dopants is one technique to improve the response characteristics, the effect of dopants on these physical properties is significant. The effect on K2 and γ1 of adding alkyl(alkoxy) phenylcyclopentenones and alkyl(alkoxy) cyanobiphenyls to the base mixture ZLI-4792 together with their temperature dependence have been investigated using different temperature scales. The reduced temperature scale showed the effect of these dopants on K2 is small. On the other hand, the temperature dependence of γ1 depends on both the absolute temperature scale and the reduced temperature scale. Therefore, it is clear that the choice of temperature scale with which to compare γ1 for different systems raises fundamental questions which way not have a unique answer. 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
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An unequal contribution of male and female lineages from parental populations to admixed ones is not uncommon in the American continents, as a consequence of directional gene flow from European men into African and Hispanic Americans in the past several c
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Mitochondrial DNA control region segment I sequences and melanocortin 1 receptor (MC1R) gene polymorphism were examined in ethnic populations in the silk road region of China. Both the frequencies of the MC1R variants and the results of mtDNA data in this region presented intermediate values between those of Europe and East and Southeast Asia, which suggested extensive gene admixture in this area and was in general agreement with previous studies. Phylogenetic analysis of the ethnic populations in the Silk Road region that based on mtDNA data didn't show expected cluster pattern according to their ethnogenesis. We suspect that a high migration rate in female among these closely related populations and other three demographic events might account for it.
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The viscosity-temperature relation is determined for the water models SPC/E, TIP4P, TIP4P/Ew, and TIP4P/2005 by considering Poiseuille flow inside a nano-channel using molecular dynamics. The viscosity is determined by fitting the resulting velocity profile (away from the walls) to the continuum solution for a Newtonian fluid and then compared to experimental values. The results show that the TIP4P/2005 model gives the best prediction of the viscosity for the complete range of temperatures for liquid water, and thus it is the preferred water model of these considered here for simulations where the magnitude of viscosity is crucial. On the other hand, with the TIP4P model, the viscosity is severely underpredicted, and overall the model performed worst, whereas the SPC/E and TIP4P/Ew models perform moderately.
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The use of high viscous pore fluid has been widely established to match the rate of excess pore pressure generation and subsequent dissipation in dynamic centrifuge tests. The appropriate viscosity is linked to the geometric and gravity scaling factors which corresponds to the use of pore fluid of 'N' cSt in a 'N'g centrifuge test. The use of either water (1 cSt) or pore fluid lower than 'N' cSt can influence the behaviour of soil liquefaction in a centrifuge test. In this paper, the floatation of a tunnel following soil liquefaction is investigated using pore fluids with two different viscosities. The results show that the uplift displacement of the tunnel is significantly affected by the pore fluid viscosity. © 2010 Taylor & Francis Group, London.
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This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (SOI). A two-dimensional (2D) semiconductor device simulation tool PISCES-II has been used to analyze the dc and transient behaviors of the two devices. The modeling results show that the switch with an N+-I-P+-I-N+ modulation structure has a much faster response speed than the device with a P+-I-N+ modulation structure, although the former requires slightly stronger injection power.