963 resultados para Ultra Wide Band Antennas


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With the recent progress and rapid increase in the field of communication, the designs of antennas for small mobile terminals with enhanced radiation characteristics are acquiring great importance. Compactness, efficiency, high data rate capacity etc. are the major criteria for the new generation antennas. The challenging task of the microwave scientists and engineers is to design a compact printed radiating structure having broadband behavior along with good efficiency and enhanced gain. Printed antenna technology has received popularity among antenna scientists after the introduction of planar transmission lines in mid-seventies. When we view the antenna through a transmission line concept, the mechanism behind any electromagnetic radiator is quite simple and interesting. Any electromagnetic system with a discontinuity is radiating electromagnetic energy. The size, shape and orientation of the discontinuities control the radiation characteristics of the system such as radiation pattern, gain, polarization etc. It can be either resonant or non-resonant. This thesis deals with antennas that are developed from a class of transmission lines known as coplanar strip-CPS, a planar analogy of parallel pair transmission line. The specialty of CPS is its symmetric structure compared to other transmission lines, which makes the antenna structures developed from CPS quite simple for design and fabrication. The structural modifications on either metallic strip of CPS results in different antennas. The first part of the thesis discusses a single band and dual band design derived from open ended slot lines which are very much suitable for 2.4 and 5.2 GHz WLAN applications. The second section of the study is vectored into the development of enhanced gain dipoles. A single band dipole and a wide band enhanced gain dipole suitable for 5.2/5.8 GHZ band and imaging applications are developed and discussed. Last part of the thesis discusses the development of directional UWBs. Three different types of ultra-compact UWBs are developed and almost all the frequency domain and time domain analysis of the structures are discussed.

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A microstrip antenna with large bandwidth is developed using a parasitic technique . Compared to the available wide-baud antennas,the proposed antenna structure is very compact and gives a lessdistorted radiation pattern with frequency . An impedance bandwidth,eight times that of a conventional patch antenna of the same size, Isachieved. The concept of coupled microstrip line model Is extended fortheoretical interpretation of the impedance loci

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The thesis is the outcome of the theoretical and experimental investigations on mocrostrip-fed printed strip monopole antenna.Finite ground plane has been effectively utilized to excite a new resonance near the fundamental mode by introducing another extended strip from the ground plane,without affecting compactness.Further size reduction was achieved by carrying out folding analysis on dual strip antenna and a compact folded dual strip antenna has been designed.Design methodologies for both the compact dual band antennas are presented.The proposed antennas can be used for mobile and WLAN applications due to wide bandwidth,moderate gain and omnidirectional radiation coverage.

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A major challenge in the transmission of narrow pulses is the radiation characteristics of the antenna. Designing the front ends for UWB systems pose challenges compared to their narrow and wide band counterparts because in addition to having electrically small size, high efficiency and band width, the antenna has to have excellent transient response. The present work deals with the design of four novel antenna designs- Square Monopole, Semi-Elliptic Slot, Step and Linear Tapered slot - and an assay on their suitability in UWB Systems. Multiple resonances in the geometry are matched to UWB by redesigning the ground-patch interfaces. Techniques to avoid narrow band interference is proposed in the antenna level and their effect on a nano second pulse have also been investigated. The thesis proposes design guidelines to design the antenna on laminates of any permittivity and the analyzes are complete with results in the frequency and time domains.

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A compact, dual band coplanar waveguide fed modified T-shaped uniplanar antenna is presented. The antenna has resonances at 1.77 and 5.54 GHz with a wide band from 1.47–1.97 GHz and from 5.13–6.48 GHz with an impedance bandwidth of 34% and 26%, respectively. Also the antenna has an average gain of 3 dBi in lower band and 3.5 dBi in higher band with an average efficiency of 90%.

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This thesis presents the microwave dielectric properties of two novel dielectric resonator materials with the composition Ca(Ca1/4Nb2/4Ti1/4)O3 and Ca(Ca1/4Ta2/4Ti1/4)O3 ceramics and their application in the fabrication of wideband antennas. The microwave dielectric properties of the ceramics were tailored by several techniques such as doping, glass addition and solid solution formations in the complex perovskite A and B-sites with suitable substitutions. Among the wide variety of DRs developed, ceramic resonators with optimum properties were identified to fabricate broadband dielectric resonator loaded microstrip patch antennas. Furthermore, wideband, high permittivity dielectric resonator antennas were fabricated and explored the possibility of tuning their characteristics by modifying the feed line geometries.

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A method for simultaneously enhancing the bandwidth and reducing the size of microstrip antennas (MSAs) using a modified ground plane (GP) has been proposed with design formulas. A combshaped truncated GP is used for this purpose. This method provides an overall compactness up to 85% for proximity-coupled MSAs in the frequency range of 900 MHz–5.5 GHz with an improvement inbandwidth up to seven times when compared with the conventional ones

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This chapter considers the Multiband Orthogonal Frequency Division Multiplexing (MB- OFDM) modulation and demodulation with the intention to optimize the Ultra-Wideband (UWB) system performance. OFDM is a type of multicarrier modulation and becomes the most important aspect for the MB-OFDM system performance. It is also a low cost digital signal component efficiently using Fast Fourier Transform (FFT) algorithm to implement the multicarrier orthogonality. Within the MB-OFDM approach, the OFDM modulation is employed in each 528 MHz wide band to transmit the data across the different bands while also using the frequency hopping technique across different bands. Each parallel bit stream can be mapped onto one of the OFDM subcarriers. Quadrature Phase Shift Keying (QPSK) and Dual Carrier Modulation (DCM) are currently used as the modulation schemes for MB-OFDM in the ECMA-368 defined UWB radio platform. A dual QPSK soft-demapper is suitable for ECMA-368 that exploits the inherent Time-Domain Spreading (TDS) and guard symbol subcarrier diversity to improve the receiver performance, yet merges decoding operations together to minimize hardware and power requirements. There are several methods to demap the DCM, which are soft bit demapping, Maximum Likelihood (ML) soft bit demapping, and Log Likelihood Ratio (LLR) demapping. The Channel State Information (CSI) aided scheme coupled with the band hopping information is used as a further technique to improve the DCM demapping performance. ECMA-368 offers up to 480 Mb/s instantaneous bit rate to the Medium Access Control (MAC) layer, but depending on radio channel conditions dropped packets unfortunately result in a lower throughput. An alternative high data rate modulation scheme termed Dual Circular 32-QAM that fits within the configuration of the current standard increasing system throughput thus maintaining the high rate throughput even with a moderate level of dropped packets.

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Simple design formulas for designing ultra wideband (UWB) antennas in the form of complementary planar monopoles are described and their validity is tested using full electromagnetic wave simulations and measurements. Assuming dielectric substrate with relative permittivity of 10.2, the designed antennas feature a small size of 13 mmtimes26 mm. They exhibit a 10 dB return loss bandwidth from 3 to more than 15 GHz accompanied by near omnidirectional characteristics and good radiation efficiency throughout this band

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We report the design and development of a self-contained multi-band receiver (MBR) system, intended for use with a single large aperture to facilitate sensitive and high time-resolution observations simultaneously in 10 discrete frequency bands sampling a wide spectral span (100-1500 MHz) in a nearly log-periodic fashion. The development of this system was primarily motivated by need for tomographic studies of pulsar polar emission regions. Although the system design is optimized for the primary goal, it is also suited for several other interesting astronomical investigations. The system consists of a dual-polarization multi-band feed (with discrete responses corresponding to the 10 bands pre-selected as relatively radio frequency interference free), a common wide-band radio frequency front-end, and independent back-end receiver chains for the 10 individual sub-bands. The raw voltage time sequences corresponding to 16 MHz bandwidth each for the two linear polarization channels and the 10 bands are recorded at the Nyquist rate simultaneously. We present the preliminary results from the tests and pulsar observations carried out with the Robert C. Byrd Green Bank Telescope using this receiver. The system performance implied by these results and possible improvements are also briefly discussed.

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The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

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MgO is a promising gate dielectric and surface passivation film for GaN/AlGaN transistors, but little is known of the band offsets in the MgO/AlN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of MgO/AlN heterostructures. A value of Delta E-v=0.22 +/- 0.08 eV was obtained. Given the experimental band gap of 7.83 eV for MgO, a type-I heterojunction with a conduction band offset of similar to 1.45 eV is found. The accurate determination of the valence and conduction band offsets is important for use of III-N alloys based electronic devices.

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The alloy formation enthalpy and band structure of InGaN nanowires were studied by a combined approach of the valence-force field model, Monte Carlo simulation, and density-functional theory (DFT). For both random and ground-state structures of the coherent InGaN alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. We proposed an analytical formula for computing the band gap of any InGaN nanowires based on the results from the screened exchange hybrid DFT calculations, which in turn reveals a better band-gap tunability in ternary InGaN nanowires than the bulk alloy.

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The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.

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This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.