992 resultados para TIN METAL GATE
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Potentiostatic and potentiodynamic studies were carried out to establish the inhibiting effects of citric acid on the pitting corrosion of tin. The critical potential (E-crit), which leads to pitting or general corrosion, was determined in sodium perchlorate solution in the pH range 1.0 to 4.0. Pit nucleation and growth, at pH 4.0, can be described by instantaneous nucleation followed by progressive nucleation. The results show that the minimum acid concentration needed to inhibit pitting of tin is 10(-2) M. Pitting occurrence by direct interaction between metal and perchlorate anions was observed.
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Tin on the oxide form, alone or doped with others metals, has been extensively used as gas sensor, thus, this work reports on the preparation and kinetic parameters regarding the thermal decomposition of Sn(II)-ethylenediaminetetraacetate as precursor to SnO2. Thus, the acquaintance with the kinetic model regarding the thermal decomposition of the tin complex may leave the door open to foresee, whether it is possible to get thin film of SnO2 using Sn(II)-EDTA as precursor besides the influence of dopants added.The Sn(II)-EDTA soluble complex was prepared in aqueous medium by adding of tin(II) chloride acid solution to equimolar amount of ammonium salt from EDTA under N-2 atmosphere and temperature of 50degreesC arising the pH similar to 4. The compound was crystallized in ethanol at low-temperature and filtered to eliminate the chloride ions, obtaining the heptacoordinated chelate with the composition H2SnH2O(CH2N(CH2COO)(2))(2).0.5H(2)O.Results from TG, DTG and DSC curves under inert and oxidizing atmospheres indicate the presence of water coordinated to the metal and that the ethylenediamine fraction is thermally more stable than carboxylate groups. The final residue from thermal decomposition was the SnO2 characterized by X-ray as a tetragonal rutile phase.Applying the isoconversional Wall-Flynn-Ozawa method on the DSC curves, average activation energy: E-a = 183.7 +/- 12.7 and 218.9 +/- 2.1 kJ mol(-1), and pre-exponential factor: log A = 18.85 +/- 0.27 and 19.10 +/- 0.27 min(-1), at 95% confidence level, could be obtained, regarding the loss of coordinated water and thermal decomposition of the carboxylate groups, respectively. The E-a and logA also could be obtained applying isoconventional Wall-Flynn method on the TG curves.From E-a and log A values, Dollimore and Malek procedures could be applied suggesting R3 (contracting volume) and SB (two-parameter model) as the kinetic model to the loss of coordinated water (177-244degreesC) and thermal decomposition of the carboxylate groups (283-315degreesC), respectively. Simulated and experimental normalized DTG and DSC curves besides analysis of residuals check these kinetic models. (C) 2003 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Sintering of SnO 2 compacts, obtained through slip casting, was studied by means of dilatometry, Hg porosimetry, scanning electron microscopy, and density measurement (Archimedes method). Sintering is strongly influenced by the green microstructure. Moreover, the sintering mechanisms are not dependent on the slurries' solid content up to 50% of solids in volume. Above this value, agglomerates are formed, leading to differential sintering inside and among the agglomerates. Another important point is the reduction of the temperature of maximum shrinkage rate when compared to tin oxide processed by isostatic pressing. This reduction is more accentuated when ammonium hydroxide is added to the suspension. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
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Heavy metal oxide (HMO) glasses have received special attention due to their optical, electrical and magnetic properties. The problem with these glasses is their corrosive nature. In this work, three ceramic crucibles (Al 2O 3, SnO 2 and ZrO 2) were tested in the melting of the system 40 PbO-35 BiO 1.5-25 GaO 1.5 (cation-%). After glass melting, crucibles were transversally cut and analyzed by scanning electronic microscopy (SEM), coupled to microanalysis by energy dispersive spectroscopy (EDS). Results indicated that zirconia crucibles presented the highest corrosion, probably due to its smallest grain size. Tin oxide crucibles presented a low corrosion with small penetration of the glass into the crucible. This way, these crucibles are an interesting alternative to melt corrosive glasses in instead of gold or platinum crucibles. It is important to emphasize the lower cost of tin oxide crucibles, compared to gold or platinum ones.
Turning of compacted graphite iron using commercial tiN coated Si 3N4 under dry machining conditions
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Due to their high hardness and wear resistance Si3N4 based ceramics are one of the most suitable cutting tool materials for machining hardened materials. Therefore, their high degree of brittleness usually leads to inconsistent results and sudden catastrophic failures. Improvement of the functional properties these tools and reduction of the ecological threats may be accomplished by employing the technology of putting down hard coatings on tools in the state-of-the-art PVD processes, mostly by improvement of the tribological contact conditions in the cutting zone and by eliminating the cutting fluids. However in this paper was used a Si3N4 based cutting tool commercial with a layer TiN coating. In this investigation, the performance of TiN coating was assessed on turning used to machine an automotive grade compacted graphite iron. As part of the study were used to characterise the performance of cutting tool, flank wear, temperature and roughness. The results showed that the layer TiN coating failed to dry compacted graphite iron under aggressive machining conditions. However, using the measurement of flank wear technique, the average tool life of was increased by VC=160 m/min.The latter was also observed using a toolmakers microscope and scanning electron microscopy (SEM).
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Tinplate is one of the most widely used food canning materials, however, there are significant problems related to the use of tinplate cans, such as alterations in sensory features affecting food quality and corrosion phenomena of the canning material. To avoid corrosion problems different methods have been used for the passivation of tinplate such protective lacquers or different kinds of corrosion inhibitors (chromate and dichromate). However, chromates and dichromates are extremely harmful to the environment and can cause carcinogenic tumors to humans. An option, protective coatings obtained by the sol-gel process, act as a physical barrier, which isolates the surface of metal protecting from the corrosive agents. The aim of this work is to study the influence of addition of cerium (IV) ions in the inorganic and organic part of sol-gel processing in the formation of hybrid coatings based on siloxane-PMMA on tin plate. The coatings were obtained by dip-coating technique and evaluated by open circuit and impedance measurements, linear polarization and polarization curves obtained in 3.5% NaCl solution. The results have clearly shown the improvement on the protective properties of the Ce 4+ modified film when added into the organic phase, which can be due to the formation of a more uniform and densely reticulated siloxane-PMMA film. © 2009 by NACE International.
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The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Pós-graduação em Engenharia Mecânica - FEG
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Voltammetry has been employed to study the influence of systematic additions of citric acid on the E-I curves of Tin in 0.5 M NaClO4, in order to verify the film growth in the presence of the organic acid and the inhibition of the pitting corrosion of the metal. The minimum concentration of the organic acid needed to change the GI curves is 10(-2) M, in the pH range 1.0-4.0. At pH 3.0 and 4.0, the scan rate dependence on current density, in the potential region of formation and reduction of the film, showed that in a first stage adsorption occurs. In a second stage, the v(1/2) dependence found can he explained by ohmic resistance control. The formation of tin/citric acid complexes, 10(-2) M, is suggested. The pitting inhibition may be due to the formation of a mixed layer of tin in citric acid concentrations higher than 10(-2) oxide and tin citrate complexes on the electrode surface. (C) 2001 Elsevier Science B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45 degrees rotated SOI substrates comparing their performance with standard MuGFETs fabricated without substrate rotation. Different fin widths are studied for temperatures ranging from 250 K up to 400 K. The results of transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and unit-gain frequency are studied. It is observed that the substrate rotation improves the carrier mobility of narrow MuGFETs at any temperature because of the changing in the conduction plane at the sidewalls from (1 1 0) to (1 0 0). For lower temperatures, the improvement of the carrier mobility of rotated MuGFETs is more noticeable as well as the rate of mobility improvement with the temperature decrease is larger. The output conductance is weakly affected by the substrate rotation. Although this improvement in the transconductance of rotated MuGFETs is negligibly transferred to the intrinsic voltage gain, the unity-gain frequency of rotated device is improved due to the larger carrier mobility in the entire range of temperatures studied. (C) 2011 Elsevier Ltd. All rights reserved.
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The evolution of the structure and properties of Cr/Cr oxide thin films deposited on HK40 steel substrates by reactive magnetron sputtering (RMS) was investigated and linked to their potential protective behavior against metal dusting. Deposition time, mode of oxygen feeding, and application of bias voltage were varied to assess their effect on the density, adhesion, and integrity of the films. All the films showed a very fine columnar microstructure and the presence of amorphous Cr oxide. Both, an increasing time and a constant oxygen flow during deposition led to the development of relatively low density films and mud-like cracking patterns. A graded oxygen flow resulted in films with fewer cracks, but a careful control of the oxygen flow is required to obtain films with a truly graded structure. The effect of the bias voltage was much more significant and beneficial. An increasing negative bias voltage resulted in the development of denser films with a transition to an almost crack-free structure and better adhesion. The amorphous oxide resulted in low values of hardness and Young's modulus. (C) 2012 Elsevier B.V. All rights reserved.
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Many studies on the morphology, molecular orientation, device performance, substrate nature and growth parameter dependence have been carried out since the proposal of Sexithiophene (6T) for organic electronics [ ] However, these studies were mostly performed on films thicker than 20nm and without specifically addressing the relationship between morphology and molecular orientation within the nano and micro structures of ultrathin films of 0-3 monolayers. In 2004, the observation that in OFETs only the first few monolayers at the interface in contact with the gate insulator contribute to the charge transport [ ], underlined the importance to study submonolayer films and their evolution up to a few monolayers of thickness with appropriate experimental techniques. We present here a detailed Non-contact Atomic Force Microscopy and Scanning Tunneling Microscopy study on various substrates aiming at the investigation of growth mechanisms. Most reported similar studies are performed on ideal metals in UHV. However it is important to investigate the details of organic film growth on less ideal and even technological surfaces and device testpatterns. The present work addresses the growth of ultra thin organic films in-situ and quasi real-time by NC-AFM. An organic effusion cell is installed to evaporate the organic material directly onto the SPM sample scanning stage.