954 resultados para Strong laser fields


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High temperature superconductors, such as melt-processed YBCO bulks, have great advantages on trapping strong magnetic fields in liquid nitrogen. To enable them to function well, there are some traditional ways of magnetizing them, in which the YBCO bulks are magnetized instantly under a very strong source of magnetic field. These ways would consume great amounts of power to make the superconductors trap as much field as possible. Thermally Actuated Magnetization (TAM) Flux pump has been proved a perfect substitution for these expensive methods by using a relatively small magnet as the source. In this way, the field is developed gradually over many pulses. Unlike conventional flux pumping ways, the TAM does not drive the superconductor normal during the process of magnetization. In former experiments for the flux pump, some fundamental tests were done. In this paper, the experiment system is advanced to a new level with better temperature control to the thermal waves moving in the Gadolinium and with less air gap for the flux lines sweeping through the superconductor. This experiment system F leads to a stronger accumulation of the magnetic field trapped in the YBCO bulk. We also tried different ways of sending the thermal waves and found out that the pumping effect is closely related to the power of the heaters and the on and off time. © 2010 IEEE.

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The dynamic characteristics, including the crosstalk and relaxation oscillation, of linear optical amplifiers (LOAs) are investigated by small-signal analysis under an averaging carrier density approximation and compared with the results of numerical simulation. The good agreement between the numerical simulation and the small-signal analysis indicated the averaging carrier density is an appropriate approximation for analyzing LOAs. Theoretical analyzes also show that the dynamic properties of the vertical laser fields dominate the dynamic performance of LOAs. Based on the small-signal analysis, a concise equation for the crosstalk under high bit rate was derived, which can be applied to measure the differential gain of LOAs.

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Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.

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The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz (THz) radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.

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The magnetocapacitive response of a double-barrier structure (DBS), biased beyond resonances, has been employed to determine the density of states (DOS) of the two-dimensional electron gas residing in the accumulation layer on the incident side of the DBS. An adequate procedure is developed to compare the model calculation of the magnetocapacitance with the experimental C vs B curves measured at different temperatures and biases. The results show that the fitting is not only self-consistent but also remarkably good even in well-defined quantum Hall regimes. As a result, information about the DOS in strong magnetic fields could reliably be extracted.

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Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.

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The effect of laser fields on the NO interaction potentials is obtained by the calculation of time-resolved photoelectron spectrum (TRPES) using the time-dependent wave-packet method. The calculation not only shows that the overlap of the pump-probe pulses makes some NO molecular "invisible" states visible, but also that the coupling strength and the positions of relevant curves change on increasing the laser intensity. These changed potentials affect their dynamical behavior and influence the shape and position of each peak in TRPES. That the coupling strength of relevant potentials can be changed by the field-matter interaction is consistent with our ab initio calculations.

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We review principally some recent work carried out in Belfast and Heraklion which handles the few-electron dynamics of atomic and molecular systems exposed to high frequency. high intensity laser fields. The design and application of the quantitatively accurate computational methods is discussed. The Belfast work is illustrated by results for double ionization of helium and the hydrogen molecule where in each case the two electrons have been handled in full-dimensionality. The first results for multiphoton, double ionization of a complex atom, namely magnesium demonstrate an important application of the Heraklion approach.

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A realistic model of the dipole radiation forces in transverse Doppler cooling (with a s+-s- laser configuration) of an atomic beam of group 13 elements is studied within the quantum-kinetic equation framework. The full energy level sub-structure for such an atom with I = 0 (such as 66Ga) is analysed. Two cooling strategies are investigated; the first involving the 2P3/2 ? 2D5/2 transition and the second a dual laser cooling experiment involving transitions 2P1/2 and 2P3/2 ? 2S1/2. The latter scheme creates a velocity-independent dark-state resonance that inhibits a steady-state dipole cooling force. However, time-dependent calculations show that transient cooling forces are present that could be exploited for laser cooling purposes in pulsed laser fields.

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We investigate the influence of the autoionizing 3s3p6nl resonances on the fifth harmonic generated by 200–240 nm laser fields interacting with Ar. To determine the influence of a multielectron response we develop the capability within time-dependent R-matrix theory to determine the harmonic spectra generated. The fifth harmonic is affected by interference between the response of a 3s electron and the response of a 3p electron, as demonstrated by the asymmetric profiles in the harmonic yields as functions of wavelength.

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Efficient production of coherent harmonic radiation from solid targets relies critically on the formation of smooth, short density scalelength plasmas. Recent experimental results (Dromey et al 2009 Nat. Phys. 5 146) suggest, however, that the target roughness on the scale of the emitted harmonic wavelength does not result in diffuse reflection-in apparent contradiction to the Rayleigh criterion for coherent reflection. In this paper we show, for the first time, using analytic theory and 2D PIC simulations, that the interaction of relativistically strong laser pulses with corrugated target surfaces results in a highly effective smoothing of the interaction surface and consequently the generation of highly collimated and temporally confined XUV pulses from rough targets, in excellent agreement with experimental observations.

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Context. The jets of compact accreting objects are composed of electrons and a mixture of positrons and ions. These outflows impinge on the interstellar or intergalactic medium and both plasmas interact via collisionless processes. Filamentation (beam-Weibel) instabilities give rise to the growth of strong electromagnetic fields. These fields thermalize the interpenetrating plasmas. 

Aims. Hitherto, the effects imposed by a spatial non-uniformity on filamentation instabilities have remained unexplored. We examine the interaction between spatially uniform background electrons and a minuscule cloud of electrons and positrons. The cloud size is comparable to that created in recent laboratory experiments and such clouds may exist close to internal and external shocks of leptonic jets. The purpose of our study is to determine the prevalent instabilities, their ability to generate electromagnetic fields and the mechanism, by which the lepton micro-cloud transfers energy to the background plasma. 

Methods. A square micro-cloud of equally dense electrons and positrons impinges in our particle-in-cell (PIC) simulation on a spatially uniform plasma at rest. The latter consists of electrons with a temperature of 1 keV and immobile ions. The initially charge- and current neutral micro-cloud has a temperature of 100 keV and a side length of 2.5 plasma skin depths of the micro-cloud. The side length is given in the reference frame of the background plasma. The mean speed of the micro-cloud corresponds to a relativistic factor of 15, which is relevant for laboratory experiments and for relativistic astrophysical outflows. The spatial distributions of the leptons and of the electromagnetic fields are examined at several times. 

Results. A filamentation instability develops between the magnetic field carried by the micro-cloud and the background electrons. The electromagnetic fields, which grow from noise levels, redistribute the electrons and positrons within the cloud, which boosts the peak magnetic field amplitude. The current density and the moduli of the electromagnetic fields grow aperiodically in time and steadily along the direction that is anti-parallel to the cloud's velocity vector. The micro-cloud remains conjoined during the simulation. The instability induces an electrostatic wakefield in the background plasma. 

Conclusions. Relativistic clouds of leptons can generate and amplify magnetic fields even if they have a microscopic size, which implies that the underlying processes can be studied in the laboratory. The interaction of the localized magnetic field and high-energy leptons will give rise to synchrotron jitter radiation. The wakefield in the background plasma dissipates the kinetic energy of the lepton cloud. Even the fastest lepton micro-clouds can be slowed down by this collisionless mechanism. Moderately fast charge- and current neutralized lepton micro-clouds will deposit their energy close to relativistic shocks and hence they do not constitute an energy loss mechanism for the shock.

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The properties of Ellerman bombs (EBs), small-scale brightenings in the Hα line wings, have proved difficult to establish because their size is close to the spatial resolution of even the most advanced telescopes. Here, we aim to infer the size and lifetime of EBs using high-resolution data of an emerging active region collected using the Interferometric BIdimensional Spectrometer (IBIS) and Rapid Oscillations of the Solar Atmosphere (ROSA) instruments as well as the Helioseismic and Magnetic Imager (HMI) onboard the Solar Dynamics Observatory (SDO). We develop an algorithm to track EBs through their evolution, finding that EBs can often be much smaller (around 0.3″) and shorter-lived (less than one minute) than previous estimates. A correlation between G-band magnetic bright points and EBs is also found. Combining SDO/HMI and G-band data gives a good proxy of the polarity for the vertical magnetic field. It is found that EBs often occur both over regions of opposite polarity flux and strong unipolar fields, possibly hinting at magnetic reconnection as a driver of these events.The energetics of EB events is found to follow a power-law distribution in the range of a nanoflare (1022-25 ergs).

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The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.

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To increase the amount of logic available to the users in SRAM-based FPGAs, manufacturers are using nanometric technologies to boost logic density and reduce costs, making its use more attractive. However, these technological improvements also make FPGAs particularly vulnerable to configuration memory bit-flips caused by power fluctuations, strong electromagnetic fields and radiation. This issue is particularly sensitive because of the increasing amount of configuration memory cells needed to define their functionality. A short survey of the most recent publications is presented to support the options assumed during the definition of a framework for implementing circuits immune to bit-flips induction mechanisms in memory cells, based on a customized redundant infrastructure and on a detection-and-fix controller.