Caracterização da lama vermelha e sua aplicabilidade na adsorção do corante têxtil Reativo Azul 19

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da adsorção do corante reativo blue 19 por lama vermelha ativada por tratamento químico e térmico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Substituição de fosfato solúvel por reativo em soja cultivada em semeadura direta em função de níveis de fósforo e modo de aplicação

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Aplicação de Neurospora crassa para avaliação da biosorção e biodegradação de corantes ácido, xanteno, diretos e reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Otimização do processo de deposição de filmes TiO2:Mn usando RF magnetron sputtering

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Produção de anticorpo monoclonal reativo com leveduras do gênero candida

The aim of this study was to obtain a reactive monoclonal antibody against Candida albicans. Spleen celIs of BALB/c mice previously immunized withCandida were fused in vitro with mielorna cells Sp2-0Ag14. The resultant hybridcells were kept in culture medium at 5% C02.The suspension growing cells were tested by ELISA to check the antibodies titer. The positive colonies were cloned to achieve the monoclonal antibody and further expanded in mice peritoneum. The antibody produced was purified and isotope. The monoclonal antibody was denominated 76C. The 76C was directed against mannoprotein molecules from Candida cell surface, which has not yet been completely investigated to find outlhe specific nature of epitope. The antibody 76C was analyzed by DOT BLOTagainst different Candida species and there were positives results in 87,5% of the tested samples_ The monoclonal antibody 76C will be a useful tool to investigate oligomannoside epitope from mannan and could be applied in sera diagnosis in invasive candidiasis and in studies of glicidic epitope.

Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Silica-based Nano-coating on Zirconia Surfaces Using Reactive Magnetron Sputtering: Effect on Chemical Adhesion of Resin Cements

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Feasibility of RF Sputtering and PIIID for production of thin films from red mud

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Aplicações de um potencial reativo no estudo da interação entre moléculas e superfícies bidimensionais

In materials science, the search for technological improvements have become one of the main subject of study of researchers. This is especially true in the case of materials with reduced sizes, in the nanometer scale. Important phenomena to be studied in these cases are the desorption and adsorption on two-dimensional materials, such as graphene. These phenomena are of great importance in the study of interactions between organic films, synthesis or catalysis of reactions on surfaces and even in the creation of nanoscale devices [1, 2, 3, 4]. Between the most important topics related to these phenomena are the storage of gases in low-dimensional systems and the study of nanostructured fuel cells or batteries. In this context we used two different parametrizations for the reactive force field ReaxFF to study the potential barriers and reaction barriers of our system. First we made a study about the Reaction Barriers and Energy Barriers for bonds between graphene and the following atoms: sulfur, fluorine, hydrogen, nitrogen and oxygen. It is important to have this information in order to make it possible to understand how these atoms react with the graphene sheet. Subsequently, we calculate reaction barriers for mixed structures where fluorine is a fixed element bonded to graphene and other element is simultaneously bonded to graphene. This other element (N, O, H or S) is varied in its possible relative positions (ortho, meta and para in relation to fluorine in either: the same side and in the opposite side of the graphene membrane)

Growth evolution of self-textured ZnO films deposited by magnetron sputtering at low temperatures

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Morphological and electrical evolution of ZnO:Al thin films deposited by rf magnetron sputtering onto glass substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Al-doping effect on the surface morphology of zno films grown by reactive rf magnetron sputtering

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm−3 to 2.6 × 1019 cm−3 . The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Effect of Zn Sputtering Rate on the Morphological and Optical Properties of ZnO Films

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)