ZnO Nanorods as Scatterers for Random Lasing Emission from Dye Doped Polymer Films

A random lasing emission from 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polystyrene (PS) thin films was realized by the scattering role of ZnO nanorods. The device was fabricated by spin-coating DCJTB doped PS on ZnO nanorods. The ZnO nanorods were grown on indium-tin-oxide (ITO) glass substrate by hydrothermal synthesis method. It can be seen that the device emits a resonance multimode peak at center wavelength of 630 nm with a mode line-width of less than 0.23 nm and exhibits threshold excitation intensity as low as 0.375 mJ pulse(-1) cm(-2). The agreement of the dependence of threshold pumped intensity on the excitation area with the random laser theory indicates that the lasing emission realized here is random laser. Our results demonstrate that the nanostructured ZnO nanorods are promising candidate as alternative sources of coherent light emission to realize organic lasers.

Enhanced amplified spontaneous emission using layer-by-layer assembled cowpea mosaic virus

Layer-by-layer assembly technique was used to construct ultrathin film of cowpea mosaic virus (CPMV) by electrostatic interactions, and the film was employed as a precursor on which an OF8T2 film was deposited by spin coating. Amplified spontaneous emission (ASE) was observed and improved for the OF8T2 film. Compared with OF8T2 film on quartz, the introduction of CPMV nanoparticles reduced the threshold and loss, and remarkably increased the net gain. The threshold, loss, and gain reached 0.05 mJ/ pulse, 6.9 cm(-1), and 82 cm(-1), respectively. CPMV nanoparticles may enormously scatter light, resulting in a positive feedback, thus the ASE is easily obtained and improved.

Tris(2,2 '-bipyridyl) ruthenium(II) doped silica film modified indium tin oxide electrode and its electrochemiluminescent properties

An approach was reported to synthesize silica hybridized ruthenium bipyridyl complex through amidation reaction by covalent attachment of bis(bipyridyl)-4,4'-dicarboxy-2,2'-bipyridyl-ruthenium to (3-aminopropyl)-triethoxysilane. The hybrid complex then was gelatinized through acid catalytic hydrolysis method and a sol-gel modified indium, tin oxide electrode was prepared via spin coating technique. As prepared indium tin oxide electrode possesses good stability therein with excellent electrochemiluminescence behavior.

Efficient multilayer white polymer light-emitting diodes with aluminum cathodes

Efficient multilayer white polymer light-emitting diodes (WPLEDs) with aluminum cathodes are fabricated. The multilayer structure is composed of a water soluble hole-injection layer, a toluene-soluble emissive layer, and an alcohol-soluble emissive layer. The polarity difference of the solvents used for spin coating these polymers allows for realization of the multilayer polymer structure. The recombination zone confined at the interface of the two emissive polymers avoids exciton quenching by electrodes, and white emission is realized by harvesting photons emitted from the two emissive polymers. A maximum luminous efficiency of 16.9 cd/A and a power efficiency of 11.1 lm/W are achieved for this WPLED.

Nonvolatile memory devices based on gold nanoparticle and poly (N-Vinylcarbazole) composite

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behavior of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nanovolatile polymer memory devices.

Effects of molecular weight, solvent and substrate on the dewetting morphology of polystyrene films

Surface morphology of polystyrene (PS) films on different substrates by spin-coating before and after annealing was observed using atomic force microscopy (AFM). The effects of polymer molecular weight, substrates, solvents, and annealing conditions on the morphology of the films were investigated. Before annealing, the grain height decreases, and simultaneously the grain diameter increases with molecular weight (M-w) within the measured molecular weight. After annealing. the situation is opposite, i.e., the grain height increases while the grain diameter decreases with M-w. Furthermore, after annealing the smaller surface roughness (Ra) was obtained. It was also found that film surface roughness (Ra) depends on the vapor pressure and dipole moment of different used solvents as well as the substrates. The experimental results show that when the used solvents have similar dipole moment but different vapor pressure, the Ra of PS film decreased with the decreasing vapor pressure of solvents whether on silicon or on mica. And when the used solvents have close vapor pressure but different dipole moment, the Ra decreased with the increasing of solvent dipole moments on both substrates.

Molecular weight effects on the phase morphology of PS/P4VP blend films on homogeneous SAM and heterogeneous SAM/Au substrates

The effects of the molecular weight of polystyrene (PS) component on the phase separation of PS/poly(4-vinylpyridine) (PS/P4VP) blend films on homogeneous alkanethiol self-assembled monolayer (SAM) and heterogeneous SAM/Au substrates have been investigated by means of atomic force microscopy (AFM). For the PS (22.4k)/P4VP (60k) system, owing to the molecular weight of PS component is relatively small, the well-aligned PS and P4VP stripes with good thermal stability are directed by the patterned SAM/Au surfaces. With the increase of the molecular weight of PS component (for the PS (582k)/P4VP (60k) system), the diffusion of P4VP is hindered by the high viscosity of PS during the fast spin-coating process. The phase separation behavior of PS/P4VP on the SAM/Au patterned substrates is similar to that on the homoueneous SAM and cannot be easily directed by the patterned SAM surfaces even though the characteristic length of the lateral domain morphology is commensurate with the stripe width.

Highly efficient green-emitting phosphorescent iridium dendrimers based on carbazole dendrons

Green-emitting iridium dendrimers with rigid hole-transporting carbazole dendrons are designed, synthesized, and investigated. With second-generation dendrons, the photoluminescence quantum yield of the dendrimers is up to 87% in solution and 45% in a film. High-quality films of the dendrimers are fabricated by spin-coating, producing highly efficient. non-doped electrophosphorescent organic light-ernitting diodes (OLEDs). With a device structure of indium tin oxide/poly(3,4-ethylenedioxythiopheiie):poly(styrene sulfonic acid)/neat dendrimer/1,3,5-tris(2-N-phenylbenzimidazolyl)benzene/LiF/Al, a maximum external quantum efficiency (EQE) of 10.3% and a maximum luminous efficiency of 34.7 cd A(-1) are realized. By doping the dendrimers into a carbazole-based host, the maximum EQE can be further increased to 16.6%. The integration of rigid hole-transporting dendrons and phosphorescent complexes provides a new route to design highly efficient solution-processable dendrimers for OLED applications.

White polymeric light-emitting diodes with high color rendering index

The efficient white polymeric light-emitting diodes based on a white emissive polymer doped with a red phosphorescent dopant were fabricated by spin-coating method. The emission spectrum of the device is broadened to cover the full visible region by doping the red phosphorescent dye and thereby realizes white emission with high color-rendering index (CRI). By controlling the contents of the doped electron-transporting 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole and the red phosphorescent dopant, a luminous efficiency as high as 5.3 cd/A and a power efficiency of 3 lm/W were obtained with a CRI of 92.

Surface and interface morphology of polystyrene/poly(methyl methacrylate) thin-film blends and bilayers

The surface and interface morphologies of polystyrene (PS)/poly(methyl methacrylate) (PMMA) thin-film blends and bilayers were investigated by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy. Spin-coating a drop of a PS solution directly onto a PMMA bottom layer from a common solvent for both polymers yielded lateral domains that exhibited a well-defined topographical structure. Two common solvents were used in this study. The structure of the films changed progressively as the concentration of the PS solution was varied. The formation of the blend morphology could be explained by the difference in the solubility of the two polymers in the solvent and the dewetting of PS-rich domains from the PMMA-rich phase. Films of the PS/PMMA blend and bilayer were annealed at temperatures above their glass-transition temperatures for up to 70 h. All samples investigated with AFM were covered with PS droplets of various size distributions. Moreover, we investigated the evolution of the annealed PS/PMMA thin-film blend and bilayer and gave a proper explanation for the formation of a relatively complicated interface inside a larger PS droplet.

Bright electroluminescence from a new conjugated dendrimer

Photoluminescence and electroluminescence from a new conjugated dendrimer consisting of three distyrylbenzene units linked by a central nitrogen atom as core and meta-linked biphenyl units as dendrons were investigated. Bright electroluminescence was realized by using bilayer devices with blurred interface, which were fabricated by sequentially spin-coating a neat dendrimer and a dendrimer doped with 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD). By optimizing the concentration of PBD, the maximum brightness and EL quantum efficiency reach 4100 cd/m(2) and 0.10%, respectively.

Surface phase separations of PMMA/SAN blends investigated by atomic force microscopy

The thin films of poly(methyl methacrylate) (PMMA), poly(styrene-co-acrylonitrile) (SAN) and their blends were prepared by means of spin-coating their corresponding solutions onto silicon wafers, followed by being annealed at different temperatures. The surface phase separations of PMMA/SAN blends were characterized by virtue of atomic force microscopy (AFM). By comparing the tapping mode AFM (TM-AFM) phase images of the pure components and their blends, surface phase separation mechanisms of the blends could be identified as the nucleation and growth mechanism or the spinodal decomposition mechanism. Therefore, the phase diagram of the PMMA/SAN system could be obtained by means of TM-AFM. Contact mode AFM was also used to study the surface morphologies of all the samples and the phase separations of the blends occurred by the spinodal decomposition mechanism could be ascertained. Moreover, X-ray photoelectron spectroscopy was used to characterize the chemical compositions on the surfaces of the samples and the miscibility principle of the PMMA/SAN system was discussed.

Preparation, photo and electroluminescence properties of novel rare earth aromatic carboxylates

Novel soluble rare earth aromatic carboxylates were prepared. The triplet energy level of organic ligand was measured. The photoluminescence properties of the Tb3+ and EU3+ aromatic carboxylates and lifetimes were investigated, which indicated that these rare earth complexes have high quantum efficiency. Because of their excellent solubility, polymer-doping rare earth carboxylates were fabricated as thin Films by spin-coating method and their luminescence properties were studied. Some rare earth organic light-emitting diodes were successfully fabricated which performed high pure color. The maximum luminance of the device of ITO/PVK/PVK :Th (AS)(3)Phen: PBD/PBD/Al is 32 cd(.)m(-2) at 28 V.

Preparation and characterization of novel luminescent sol-gel films containing a RE3+ carboxylic acid complex

RE3+ (Eu3+, Tb3+) complexes with carboxylic acid (salicylic acid and benzoic acid) were introduced into the sol, which was prepared by the hydrolysis of tetraethoxysilane (TEOS). A sol-gel luminescent thin film (SG-LTF) was then prepared by dispersing the sol onto a silica substrate by a spin coating method. Multi-layer luminescent thin films were prepared by repeating the same process. The luminescent spectra, fluorescence lifetime and thermal stability of the SG-LTFs were investigated. For the reason of comparison polyvinylbutyral (PVB) was added into a N,N-dimethylformamide (DMF) solution in which the comparative RE3+ carboxylic acid complexes were previously dissolved to form the DMF/PVB solution and the PVB luminescent thin film (PVB-LTF) was prepared. The results show that a broad excitation band indicates the formation of RE complexes in the solid SG-LTFs. RE ions, which are restrained in the silica matrix, present longer lifetimes and higher thermal stability than that in the PVB-LTF containing the corresponding pure complexes. The different doping concentration of RE (III) complexes in the SG-LTFs and the different change of the emission intensities with the heat treatment temperature in the sol-gel thin film and the sol-gel bulk gel were also discussed in this paper.

A novel way to enhance electroluminescence performance based on soluble binary and ternary europium 1,1,1-trifluoroacetylacetonate

Five rare earth complexes (Gd(acae)(3), Gd(TFacaC)(3), Eu(acaC)(3), Eu(TFacaC)(3) and Eu(TFacaC)(3)bipy; acac, acetylacetone; TFacac, 1,1,1-trifluoroacetylacetone; bipy, 2,2'-bipyridyl) were synthesized. By comparing the phosphorescence spectra of Gd(acac)(3) and Gd(TFacac)(3) the effect of the replacement of hydrogen by fluorine was examined. Organic light-emitting devices (OLEDs) based on the corresponding europium complexes as emissive layers were also fabricated by the spin-coating method. The triple-layer-type device with the structure glass substrate/ITO (indium-tin oxide)/PVK [poly(N-vinylcarbazole)]/(PVKEu)-Eu-.(TFacac)(3)bipy:PBD[2-(4-bibipyyl)-5-(4-t-butylbipyl-1,3,4-oxadiazole)]/PBD/Al (aluminum) exhibits a brighter red luminescence than those devices with Eu(acac)(3) and Eu(TFacac)(3) complexes as emissive centers upon applying a d.c. voltage.