Toroid inductor development for a SIC DC-DC converter up to 150kW, based on finite element method

Dissertação para a obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Transmission electron microscopy investigation of substitution reactions from carbon nanotube template to silicon carbide nanowires

Substitution reactions between multiwalled carbon nanotubes and silicon monoxide vapour have been investigated using transmission electron microscopy. Different reactions occurred inside the multiwalled nanotubes and on the nanotube external surfaces, resulting in the formation of silicon carbide nanowires with a core–shell structure. The substitution reaction process and end products are strongly affected by nanotube structures and a ball milling treatment of the starting materials.

Ultra-precision face grinding with constant pressure, lapping kinematics, and SiC grinding wheels dressed with overlap factor

Several machining processes have been created and improved in order to achieve the best results ever accomplished in hard and difficult to machine materials. Some of these abrasive manufacturing processes emerging on the science frontier can be defined as ultra-precision grinding. For finishing flat surfaces, researchers have been putting together the main advantages of traditional abrasive processes such as face grinding with constant pressure, fixed abrasives for two-body removal mechanism, total contact of the part with the tool, and lapping kinematics as well as some specific operations to keep grinding wheel sharpness and form. In the present work, both U d-lap grinding process and its machine tool were studied aiming nanometric finishing on flat metallic surfaces. Such hypothesis was investigated on AISI 420 stainless steel workpieces U d-lap ground with different values of overlap factor on dressing (Ud=1, 3, and 5) and grit sizes of conventional grinding wheels (silicon carbide (SiC)=#800, #600, and #300) applying a new machine tool especially designed and built for such finishing. The best results, obtained after 10 min of machining, were average surface roughness (Ra) of 1.92 nm, 1.19-μm flatness deviation of 25.4-mm-diameter workpieces, and mirrored surface finishing. Given the surface quality achieved, the U d-lap grinding process can be included among the ultra-precision abrasive processes and, depending on the application, the chaining steps of grinding, lapping, and polishing can be replaced by the proposed abrasive process.

TUNGSTEN ISOTOPIC COMPOSITIONS IN STARDUST SiC GRAINS FROM THE MURCHISON METEORITE: CONSTRAINTS ON THE s-PROCESS IN THE Hf-Ta-W-Re-Os REGION

We report the first tungsten isotopic measurements in stardust silicon carbide (SiC) grains recovered from the Murchison carbonaceous chondrite. The isotopes (182,183,184,186)Wand (179,180)Hf were measured on both an aggregate (KJB fraction) and single stardust SiC grains (LS+ LU fraction) believed to have condensed in the outflows of low-mass carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. The SiC aggregate shows small deviations from terrestrial (= solar) composition in the (182)W/(184)Wand (183)W/(184)Wratios, with deficits in (182)W and (183)W with respect to (184)W. The (186)W/(184)W ratio, however, shows no apparent deviation from the solar value. Tungsten isotopic measurements in single mainstream stardust SiC grains revealed lower than solar (182)W/(184)W, (183)W/(184)W, and (186)W/(184)W ratios. We have compared the SiC data with theoretical predictions of the evolution of W isotopic ratios in the envelopes of AGB stars. These ratios are affected by the slow neutron-capture process and match the SiC data regarding their (182)W/(184)W, (183)W/(184)W, and (179)Hf/(180)Hf isotopic compositions, although a small adjustment in the s-process production of (183)W is needed in order to have a better agreement between the SiC data and model predictions. The models cannot explain the (186)W/(184)W ratios observed in the SiC grains, even when the current (185)W neutron-capture cross section is increased by a factor of two. Further study is required to better assess how model uncertainties (e. g., the formation of the (13)C neutron source, the mass-loss law, the modeling of the third dredge-up, and the efficiency of the (22)Ne neutron source) may affect current s-process predictions.

The incomplete ionization of substitutional dopants in Silicon Carbide

This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.

Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

Silicon carbide whiskers,

"Based on research supported by the United States Air Force through the Nonmetallic Materials Laboratory, Directorate of materials & Processes, Aeronautical Systems Division, under Contract no. AF 33 (616)-7005."

Silicon carbide for semiconductors /

"February 1965."

Growth and mechanical properties of filamentary silicon carbide crystals

"Directorate of Materials and Processes, Contract no. AF33(616)-7005, Project no. 7340."

The diamond grinding of reaction bonded silicon carbide

DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ARRANGEMENT

The removal of temporary organic binder from vitreous silicon carbide grinding wheels during firing

DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ARRANGEMENT

Corrosion of silicon carbide ceramics using conventional and electrochemical methods

Silicon carbide ceramics are candidate materials for use in aggressive environments, including those where aqueous acids are present. Standard corrosion testing methods such as immersion testing are not always sufficiently sensitive for these ceramics owing to the very low, almost unobservable, corrosion rates encountered. Using electrochemical methods the corrosion processes can be assisted, leading to higher rates and thus the elucidation of reaction mechanisms. The behaviour of a sintered and a reaction bonded silicon carbide has been investigated in aqueous HCl, HF, HNO3, and H2SO4, using standard immersion and new electrochemical methods. Both materials were passive in HCl, HNO3, and H2SO4 because of the formation of a surface silica film, and were active in HF. In HF, corrosion of sintered silicon carbide was slight and the residual silicon was removed from reaction bonded specimens.

Investigations on the influence of graphite filler on dry sliding wear and abrasive wear behaviour of carbon fabric reinforced epoxy composites

In this experimental study, the dry sliding wear and two-body abrasive wear behaviour of graphite filled carbon fabric reinforced epoxy composites were investigated. Carbon fabric reinforced epoxy composite was used as a reference material. Sliding wear experiments were conducted using a pin-on-disc wear tester under dry contact condition. Mass loss was determined as a function of sliding velocity for loads of 25, 50, 75, and 100 N at a constant sliding distance of 6000 m. Two-body abrasive wear experiments were performed under multi-pass condition using silicon carbide (SiC) of 150 and 320 grit abrasive papers. The effects of abrading distance and different loads have been studied. Abrasive wear volume and specific wear rate as a function of applied normal load and abrading distance were also determined. The results show that in dry sliding wear situations, for increased load and sliding velocity, higher wear loss was recorded. The excellent wear characteristics were obtained with carbon-epoxy containing graphite as filler. Especially, 10 wt.% of graphite in carbon-epoxy gave a low wear rate. A graphite surface film formed on the counterface was confirmed to be effective in improving the wear characteristics of graphite filled carbon-epoxy composites. In case of two-body abrasive wear, the wear volume increases with increasing load/abrading distance. Experimental results showed the type of counterface (hardened steel disc and SiC paper) material greatly influences the wear behaviour of the composites. Wear mechanisms of the composites were investigated using scanning electron microscopy. Wear of carbon-epoxy composite was found to be mainly due to a microcracking and fiber fracture mechanisms. It was found that the microcracking mechanism had been caused by progressive surface damage. Further, it was also noticed that carbon-epoxy composite wear is reduced to a greater extent by addition of the graphite filler, in which wear was dominated by microplowing/microcutting mechanisms instead of microcracking.