1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 mu m. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3x10(-7) A/cm(2) at a bias of 0 V and 4.3x10(-5) A/cm(2) at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 American Institute of Physics.

Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

A simple process for fabricating low-cost Si-based continuously tunable long-wavelength resonant-cavity-enhanced (RCE) photodetectors has been investigated. High-contrast SiO2/Si(Deltan similar to2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed Bragg reflectors. Such high-reflectivity SiO2/Si mirrors were deposited on the as-grown InGaAs epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 C without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. The cost is thus decreased. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3-1.6 mum was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. It demonstrates a great potential for industry processes. (C) 2005 American Institute of Physics.

Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells

A resonant-cavity enhanced reflective optical modulator is designed and frabricated, with three groups of three highly strained InGaAS/GaAs quantum wells in the cavity, for the low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AIAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.

Optical characteristics of DBR with inhomogeneous graded interfaces

Optical properties of Al0.9Ga0.1As/Al gamma Ga1-gamma As/GaAs/Al chi Ga1-chi As DBR with inhomogeneous graded interfaces has been investigated by using characteristic matrix method. The refractive index model and the analytic characteristic matrix of graded interfaces are obtained. The reflectance spectrum and the reflective phase shift are calculated for GaAs/Al-0.9 Ga-0.1 As DBR and graded interfaces DBR by using characteristic matrix method. The effect of graded interfaces on the optical properties of DBR is discussed. The result shows an extra graded phase matching layer must he added in front of the graded interfaces DBR to fulfil the conditions of phase matching at central wavelength. The accurate thickness of phase matching layer is calculated by optical thickness approximation method.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation

A back-incident Si-0.65 Ge-0.35/Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 mum is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO2-Si distributed Bragg reflector as a top mirror and the interface between the buried SiO2 and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/WI at 1.305 mum and the full width at half maximum of 14 nm.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.

Tunability of resonant wavelength by Fabry-Perot microcavity in organic light-emitting diodes

Distributed Bragg reflectors (DBR) with different reflection wavelengths were designed, and were used to fabricate microcavity organic light-emitting diodes (OLEDs) based on tris(8-hydroxyquinoline)-aluminum (Alq(3)) as the emitter and N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB) as the hole-transporting layer. The microcavity was composed of DBR dielectric mirror and metal electrode aluminum (Al) mirror. Some effects of vertical optical Fabry-Perot microcavity on spontaneous emission in OLEDs were investigated. Spectral narrowing, enhancement of emitting intensity and anglular dependence of emission were observed due to the microcavity effect. It was found experimentally that the utilization of DBR is a better method to adjust the emissive mode in the resonant cavity in OLEDs well. Thus the realization of different color light emission becomes possible by the combination of carefully designed microcavity and electroluminescent organic semiconductors in a single LED.

Microcavity effects on emissive color and electroluminescent performance in organic light-emitting diodes

Microcavity organic light-emitting diodes having a top metal mirror and a bottom dielectric mirror, which was distributed Bragg reflectors (DBR) fabricated by using TiO2-SiO2 alternative dielectric multilayer with a central stop-band and two sub-stop-bands, were fabricated. In the devices, the active layers consisted of a hole-transporting layer N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) and an electron- transporting/emitting layer tris(8-hydroxy-quinoline) aluminum (Alq(3)). The relationship of the electroluminescent (EL) spectrum and efficiency with the thickness of the active layer and metal layer was studied. It was found that the EL emissive color did not strongly depend on the thickness of the organic layer and metal layer, which was attributed to the excellent photon confinement role of the narrow stop-band of the used dielectric mirror. Thus, high efficiency microcavity organic light-emitting diodes were achieved, and the peak wavelength and color purity were not obviously changed, via optimizing the thickness of organic layer and metal electrode.

High efficiency red organic light-emitting diodes based on microcavity structure

We demonstrate high efficiency red organic light-emitting diodes (OLEDs) based on a planar microcavity comprised of a dielectric mirror and a metal Mirror. The microcavity devices emitted red light at a peak wavelength of 610 nm with a full width at half maximum (FWHM) of 25 nm in the forward direction, and an enhancement of about 1.3 factor in electroluminescent (EL) efficiency has been experimentally achieved with respect to the conventional noncavity devices. For microcavity devices with the structure of distributed Bragg reflectors (DBR)/indium-tin-oxide(ITO)/V2O5/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine(NPB)/4-(dicy-anome-thylene)-2-t-butyl-6(1,1,7,7-tetrame-thyljulolidyl-9-enyl)-4H-pyran(DCJTB):tris(8-hydroxyquinoline) aluminium (Alq(3))/Alq(3)/LiF/Al, the maximum brightness arrived at 37000 cd/m(2) at a current density of 460.0 mA/cm(2), and the current efficiency and power efficiency reach 13.7 cd/A at a current density of 0.23 mA/cm(2) and 13.3 lm/W respectively.

Geophysical signatures associated with fluid flow and gas hydrate occurrence in a tectonically quiescent sequence, Qiongdongnan Basin, South China Sea

Interpretation of high-resolution two-dimensional (2D) and three-dimensional (3D) seismic data collected in the Qiongdongnan Basin, South China Sea reveals the presence of polygonal faults, pockmarks, gas chimneys and slope failure in strata of Pliocene and younger age. The gas chimneys are characterized by low-amplitude reflections, acoustic turbidity and low P-wave velocity indicating fluid expulsion pathways. Coherence time slices show that the polygonal faults are restricted to sediments with moderate-amplitude, continuous reflections. Gas hydrates are identified in seismic data by the presence of bottom simulating reflectors (BSRs), which have high amplitude, reverse polarity and are subparallel to seafloor. Mud diapirism and mounded structures have variable geometry and a great diversity regarding the origin of the fluid and the parent beds. The gas chimneys, mud diapirism, polygonal faults and a seismic facies-change facilitate the upward migration of thermogenic fluids from underlying sediments. Fluids can be temporarily trapped below the gas hydrate stability zone, but fluid advection may cause gas hydrate dissociation and affect the thickness of gas hydrate zone. The fluid accumulation leads to the generation of excess pore fluids that release along faults, forming pockmarks and mud volcanoes on the seafloor. These features are indicators of fluid flow in a tectonically-quiescent sequence, Qiongdongnan Basin. Geofluids (2010) 10, 351-368.

Gas hydrate associated with mud diapirs in southern Okinawa Trough

Many mud diapirs have been recognized in southern Okinawa Trough by a multi-channel seismic surveying on R/V KEXUE I in 2001. Gas hydrates have been identified, by the seismic reflection characteristics, the velocity analysis and the impedance inversion. Geothermal heat flow around the central of the mud diapir has been determined theoretically by the Bottom Simulating Reflectors (BSRs). Comparing the BSR derived and the measured heat flow values, we infer that the BSR immediately at the top of the mud diapirs indicate the base of the saturated gas hydrate formation zone (BSGHFZ), but not, as we ordinarily know, the base of the gas hydrate stability zone (BGHSZ), which could be explained by the abnormal regional background heat flow and free gas flux associated with mud diapirs. As a result, it helps us to better understand the generation mechanism of the gas hydrates associated with mud diapirs and to predict the gas hydrate potential in the southern Okinawa Trough. (C) 2008 Elsevier Ltd. All rights reserved.

Gas hydrate occurrence on the continental slope of the northern South China Sea

High-resolution multi-channel seismic data and geological samples were collected during two research cruises of the R/V FENDOU 4 in 1999 and 2000. Studies on these data and samples together with results from sites 1143-1145 and 1148 of ODP Leg 184 suggest that the geological structure on the continental slope of the northern South China Sea is favorable for the formation of gas hydrates. Bottom simulating reflectors (BSRs) and geochemical anomalies which indicate the existence of gas hydrates have been recognized in sediments of the Xisha Trough, the Dongsha Rise and the accretionary wedge of the Manila subduction zone. These gas hydrates are generated by two different mechanisms depending on the tectonic regime and the seismic and geochemical characteristics. The first applies to the passive continental margin of the nor-them South China Sea on the Dongsha Rise and in the Xisha Trough. The gas hydrates are associated with diapiric structures, active faults, slumps and gravity flows as well as high Late Cenozoic sedimentation rates. Their seismic expression includes BSRs, seismic blanking zones and velocity anomalies. The second mechanism is operative on the active continental margin along the Manila subduction zone, especially in the accretionary wedge. Here, gas hydrate occurrence is marked by widespread BSRs and acoustic 'pull-down' possibly related to the existence of free gas in the sediments beneath the BSR. The thickness of the seismic blanking zones averages 250 m, suggesting that the stable gas hydrate zone has about the same thickness. (c) 2005 Elsevier Ltd. All rights reserved.

The characteristics of BSRs and their derived heat flow on the profile 973 in the northeastern South China Sea

Processing of a recently acquired seismic line in the northeastern South China Sea by Project 973 has been conducted to study the character and the distribution of gas hydrate Bottom-Simulating Reflectors (BSRs) in the Hengchun ridge. Analysis of different-type seismic profiles shows that the distribution of BSRs can be revealed to some extents by single-channel profile in this area, but seismic data processing plays an important role to resolve the full distribution of BSRs in this area. BSR' s in the northeastern South China Sea have the typical characteristics of BSRs on worldwide continental margins: they cross sediment bed reflections, they are generally parallel to the seafloor and the associated reflections have strong amplitude and a negative polarity. The characteristics of BSRs in this area are obvious and the BSRs indicate the occurrence of gas hydrate-bearing sediments in the northeastern South China Sea. The depth of the base of the gas-hydrate stability zone was calculated using the phase stability boundary curve of methane hydrate and gas hydrate with mixture gas composition and compared with the observed BSR depth. If a single gradient geothermal curve is used for the calculation, the base of the stability zone for methane hydrate or gas hydrate with a gas mixture composition does not correspond to the depth of the BSRs observed along the whole seismic profile. The geothermal gradient therefore changes significantly along the profile. The geothermal gradient and heat flow were estimated from the BSR data and the calculations show that the geothermal gradient and heat flow decrease from west to east, with the increase of the distance from the trench and the decrease of the distance to the island arc. The calculated 2 heat flow changes from 28 to 64 mW/m(2), which is basically consistent with the measured heat flow in southwestern offshore Taiwan.

Low-amplitude BSRs and gas hydrate concentration on the northern margin of the South China Sea

The passive northern continental margin of the South China Sea is rich in gas hydrates, as inferred from the occurrence of bottom-simulating reflectors (BSR) and from well logging data at Ocean Drilling Program (ODP) drill sites. Nonetheless, BSRs on new 2D multichannel seismic reflection data from the area around the Dongsha Islands (the Dongsha Rise) are not ubiquitous. They are confined to complex diapiric structures and active fault zones located between the Dongsha Rise and the surrounding depressions, implying that gas hydrate occurrence is likewise limited to these areas. Most of the BSRs have low amplitude and are therefore not clearly recognizable. Acoustic impedance provides information on rock properties and has been used to estimate gas hydrate concentration. Gas hydrate-bearing sediments have acoustic impedance that is higher than that of the surrounding sediments devoid of hydrates. Based on well logging data, the relationship between acoustic impedance and porosity can be obtained by a linear regression, and the degree of gas hydrate saturation can be determined using Archie's equation. By applying these methods to multichannel seismic data and well logging data from the northern South China Sea, the gas hydrate concentration is found to be 3-25% of the pore space at ODP Site 1148 depending on sub-surface depth, and is estimated to be less than values of 5% estimated along seismic profile 0101. Our results suggest that saturation of gas hydrate in the northern South China Sea is higher than that estimated from well resistivity log data in the gas hydrate stability zone, but that free gas is scarce beneath this zone. It is probably the scarcity of free gas that is responsible for the low amplitudes of the BSRs.