Air stable complementary polymer circuits fabricated in ambient condition by inkjet printing

Air stable complementary polymer inverters were demonstrated by inkjet printing of both top-gate electrodes and the semiconductors in ambient conditions. The p-type and n-type polymer semiconductors were also thermally annealed in ambient conditions after printing. The good performance of circuits in ambient condition shows that the transistors are not only air-stable in term of ambient humidity and oxygen, but also inert to ion migration through dielectrics from the printed gate. The result obtained here has further confirmed the feasibility of fabrication of low-cost polymer complementary circuits in a practical environment. © 2011 Elsevier B.V. All rights reserved.

Disconnection of the hippocampal-prefrontal cortical circuits impairs spatial working memory performance in rats

There is a unidirectional, ipsilateral and monosynaptic projection from the hippocampus to the prefrontal cortex. The cognitive function of hippocampal-prefrontal cortical circuit is not well established. In this paper, we use muscimol treated rats to inv

One step self-aligned multilayer patterning process for the fabrication of organic complementary circuits in combination with inkjet printing

Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

NEMS based logic and memory circuits

Carbon nanotube (CNT) based nano electromechanical system (NEMS) were developed to apply to the logic and the memory circuit. The electrical 'on-off' behavior induced by the mechanical movements of CNTs can promise low power consumption in circuit with very low level leakage current. Additionally, the unique vertical structure of nanotubes allows high integration density for devices. © 2012 IEEE.

MEMS-based mechanical AGC for oscillator circuits

This paper investigates a nonlinear amplitude saturation behavior in an electrostatically transduced, silicon MEMS disk resonator operating in its secondary elliptical bulk-mode (SEBM) at 3.932 MHz towards its implementation as an all-mechanical automatic gain control (AGC) element. The nonlinear vibration behavior of the SEBM mode is experimentally observed in open-loop testing such that above a threshold small signal drive voltage at a given polarization voltage, the vibration amplitude of the SEBM mode saturates. We also study this nonlinearity in an oscillator circuit designed such that the driving power level at the resonator input can be manually tuned as the circuit operates. The measurements of the voltage amplitudes show a clear transition from the linear to the nonlinear saturation region as the driving power is increased. Short-term frequency stability measurements were also conducted for different v ac and the resulting Allan deviation plots show an improvement in the short-term stability from 1.4 ppb in the linear region to 0.4 ppb in the amplitude saturation region. © 2013 IEEE.

Gigahertz multi-transistor graphene integrated circuits

We review the potential of graphene in ultra-high speed circuits. To date, most of high-frequency graphene circuits typically consist of a single transistor integrated with a few passive components. The development of multi-transistor graphene integrated circuits operating at GHz frequencies can pave the way for applications in which high operating speed is traded off against power consumption and circuit complexity. Novel vertical and planar devices based on a combination of graphene and layered materials could broaden the scope and performances of future devices. © 2013 IEEE.