237 resultados para RCE photodetector


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We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2−6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems

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We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2−6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems

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ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse

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The sugarcane transport system plays a critical role in the overall performance of Australia’s sugarcane industry. An inefficient sugarcane transport system interrupts the raw sugarcane harvesting process, delays the delivery of sugarcane to the mill, deteriorates the sugar quality, increases the usage of empty bins, and leads to the additional sugarcane production costs. Due to these negative effects, there is an urgent need for an efficient sugarcane transport schedule that should be developed by the rail schedulers. In this study, a multi-objective model using mixed integer programming (MIP) is developed to produce an industry-oriented scheduling optimiser for sugarcane rail transport system. The exact MIP solver (IBM ILOG-CPLEX) is applied to minimise the makespan and the total operating time as multi-objective functions. Moreover, the so-called Siding neighbourhood search (SNS) algorithm is developed and integrated with Sidings Satisfaction Priorities (SSP) and Rail Conflict Elimination (RCE) algorithms to solve the problem in a more efficient way. In implementation, the sugarcane transport system of Kalamia Sugar Mill that is a coastal locality about 1050 km northwest of Brisbane city is investigated as a real case study. Computational experiments indicate that high-quality solutions are obtainable in industry-scale applications.

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Cu2CoSnS4 (CCTS) quaternary semiconducting nanoparticles with size distribution from 20 nm to 60 nm were synthesized by one-pot low temperature time and surfactant dependent hydrothermal route. Nanoparticles were characterized structurally and optically. Excitation dependent fluorescence exhibited a dynamic stoke shift referring to the Red-Edge-Effect with peak shifting by a greater magnitude (>100 nm) towards red side, in all the samples. Hybrid devices, fabricated from CCTS nanoparticle inorganic counterparts benefitting from the conjugation of organic P3HT polymer matrix, were demonstrated for photodetection under infra-red and A. M 1.5 solar light illuminations. Faster rise and decay constants of 37 ms and 166 ms, with one order photocurrent amplification from 1.6 x 10(-6) A in the dark to 6.55 x 10(-5) A, upon the 18.50 mW cm(-2) IR lamp illumination, make CCTS a potential candidate for photodetector and photovoltaic applications. (C) 2013 AIP Publishing LLC.

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Semiconducting Cu3BiS3 (CBS) thin films were deposited by co-evaporation of Cu, Bi elemental metallic precursors, with in situ sulphurisation, using a quartz effusion cell. Cu3BiS3 thin films were structurally characterized by XRD and FE-SEM. The chemical bonding of the ions was examined by XPS. As deposited films were demonstrated for metal-semiconductor-metal near IR photodectection under lamp and laser illuminations. The photo current amplified to three orders and two orders of magnitude upon the IR lamp and 60 m W cm(-2) 1064 nm IR laser illuminations, respectively. Larger grains, made up of nano needle bunches aided the transport of carriers. Transport properties were explained based on the trap assisted space charge conduction mechanism. Steady state detector parameters like responsivity varied from 1.04 AW(-1) at 60 m Wcm(-2) to 0.22 AW(-1) at 20 m Wcm(-2). Detector sensitivity of 295 was found to be promising and further could be tuned for better responsivity and efficiency in utilization of near infra-red photodetector. (C) 2014 AIP Publishing LLC.

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A novel approach is presented for achieving an enhanced photo-response in a few layer graphene (FLG) based photodetector that is realized by introducing defect sites in the FLG. Fabrication induced wrinkle formation in graphene presented a four-fold enhancement in the photocurrent when compared to unfold PLC. Interestingly, it was observed that the addition of few multiwalled carbon nanotubes to an FLG improves the photocurrent by two-fold along with a highly stable response as compared to FLG alone.

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Earth abundant alternative chalcopyrite Cu2CoSnS4 (CCTS) thin films were deposited by a facile sol-gel process onto larger substrates. Temperature dependence of the process control of deposition and desired phase formations was studied in detail. Films were analyzed for complete transformation from amorphous to polycrystalline, with textured structures for stannite phase, as reflected from the X-ray diffraction and with nearly stoichiometric compositions of Cu:Co:Sn:S = 2:0:1:0:1:0:4:0 from EDAX analysis. Morphological investigations revealed that the CCTS films with larger grains, on the order of its thickness, were synthesized at higher temperature of 500 degrees C. The optimal band gap for application in photovoltaics was estimated to be 1.4 eV. Devices with SLG/CCTS/Al geometry were fabricated for real time demonstration of photoconductivity under A.M 1.5 G solar and 1064 rim infrared laser illuminations. A photodetector showed one order current amplification from similar to 1.9 X 10(-6) A in the dark to 2.2 x 10(-5) A and 9.8 X 10(-6) A under A.M 1.5 G illumination and 50 mW cm(-2) IR laser, respectively. Detector sensitivity, responsivity, external quantum efficiency, and gain were estimated as 4.2, 0.12 A/W, 14.74% and 14.77%, respectively, at 50 mW cm(-2) laser illuminations. An ON and OFF ratio of 2.5 proved that CCTS can be considered as a potential absorber in low cost photovoltaics applications.

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Nickel selenide (NiSe) nanostructures possessing different morphologies of wires, spheres and hexagons are synthesized by varying the selenium precursors, selenourea, selenium dioxide (SeO2) and potassium selenocyanate (KSeCN), respectively, and are characterized using X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and scanning electron microscopy techniques. Electrical measurements of a single nanowire and a hexagon carried out on devices fabricated by the focused ion beam (FIB) technique depict the semiconducting nature of NiSe and its ability to act as a visible light photodetector. The three different morphologies are used as catalysts for hydrogen evolution (HER), oxygen reduction (ORR) and glucose oxidation reactions. The wire morphology is found to be better than that of spheres and hexagons for all the reactions. Among the reactions studied, NiSe is found to be good for HER and glucose oxidation while ORR seems to terminate at the peroxide stage.

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Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithography steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

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Cobalt integrated zinc oxide nanorod (Co-ZnO NR) array is presented as a novel heterostructure for ultraviolet (UV) photodetector (PD). Defect states in Co-ZnO NRs surface induces an enhancement in photocurrent as compared to pristine ZnO NRs PD. Presented Co-ZnO NRs PD is highly sensitive to external magnetic field that demonstrated 185.7% enhancement in response current. It is concluded that the opposite polarizations of electron and holes in the presence of external magnetic field contribute to effective separation of electron hole pairs that have drifted upon UV illumination. Moreover, Co-ZnO NRs PD shows a faster photodetection speed (1.2 s response time and 7.4 s recovery time) as compared to the pristine ZnO NRs where the response and recovery times are observed as 38 and 195 s, respectively.

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Acomprehensive description of the Massachusetts coastal lobster (Homarus americanus) resou,rce was obtained by sampling commercial catches coastwide at sea and at dealerships between 1981 and 1986. Acommercial lobster sea-sampling program, wherein six coastal regions were sampled monthly, with an areal and temporal data weighting design, was the primary source of data. An improved index of catch per trap haul/set-over-day was generated by modeling the relationship between catch and immersion time and standardizing effort. This 6-year time-series of mean annual catch rates tracked closely the landings trend for territorial waters. During the study period there was a gradual increase in indices of exploitation and total annual mortality which corresponded to a gradual decline in mean carapace length of marketable lobster. The frequency of culls escalated from 10.0% in 1981 to 20.9% in 1986, while the percentage of lobster found dead in traps was consistently less than 1%. The sex ratio (%F:%M) was significantly different from 50:50 and approximated a 60:40 relationship during the study period. Male and female weight-length relationships were significantly different. Females weighed more than males at smaller sizes and less than males at larger sizes. A north-south clinal trend was evident wherein lobster north of Cape Cod weighed less at length than those from regions south of Cape Cod. Functional size-maturity relationships were developed for female lobster by staging cement gland development. Proportions mature at size represent more realistic values than those obtained by analyses of percent of females ovigerous. Regional variation occurred in most of the parameters studied. Three lobster groups, differing in major population descriptors, are defined by our data.(PDF file contains 28 pages.)

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以E. Sano的金属-半导体-金属光电探测器(MSM-PD)模型为基础,提出了一种改进型的模型。该模型以多个电流源和电容并联的形式构造,以吸收区过剩电子和空穴总数为研究对象,求解速率方程。另外计算了电容,给出了暗电流与端电压的非线性计算式,改进了传统模型中暗电流的线性计算方法。通过线性叠加给出了该模型光电流的数学解析解。通过在Matlab中的模拟计算,表明该模型具有计算量小、准确度高的特点,它不仅能反映一定偏压和光照下光电流的变化,而且能展示光电子在器件中的转化过程。这种模型也能较好地应用于微弱信号的检

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The probe tip is pivotal in determining the resolution and nature of features observed in the Scanning Tunnelling Microscope (STM). We have augmented a conventional Pt/Ir metallic tip with a hydrothermally grown ZnO nanowire (NW). Atomic resolution imaging of graphite is attained. Current-voltage (IV) characteristics demonstrate an asymmetry stemming from the unintentional n-type doping of the ZnO NW, whereas the expected Schottky barrier at the ZnO-Pt/Ir interface is shown to have negligible effect. Moreover the photoconductivity of the system is investigated, paving the way towards a photodetector capable of atomic resolution.