Connectivity patterns and early life history of the black-faced blenny Tripterygion delaisi (Cadenat and Blache, 1970)

Tese de doutoramento, Ciências do Mar, Faculdade de Ciências e Tecnologia, Universidade do Algarve, 2015

Pulsed laser deposition of YBa2Cu3O7-[delta]/PrBa2Cu3O7-[delta] /

The process of depositing thin films by the use of pulsed laser deposition (PLD) has become a more widely used technique for the growth of substances in a thin film form. Pulsed laser deposition allows for the stoichiometric film growth of the target which is of great significance in the deposition of High Temperature Superconducting materials. We will describe a system designed using an excimer laser and vaccum chamber in which thin films and superlattices of YBa2Cuj07_i, PrBa2Cu307_i, and YBajCujOr-j/ PrBajCusOr-^ were deposited on SrTiOs. Results of resistivity measurements using the four probe technique will be shown.

Personal soundtracks on public transit : personal listening devices and socio-spatial negotiations of students' bus journeys

One way of exploring the power of sound in the experience and constitution of space is through the phenomenon of personal listening devices (PLDs) in public environments. In this thesis, I draw from in-depth interviews with eleven Brock University students in S1. Catharines, Ontario, to show how PLDs (such as MP3 players like the iPod) are used to create personalized soundscapes and mediate their public transit journeys. I discuss how my interview participants experience the space-time of public transit, and show how PLDs are used to mediate these experiences in acoustic and non-acoustic ways. PLD use demonstrates that acoustic and environmental experiences are co-constitutive, which highlights a kinaesthetic quality of the transit-space. My empirical findings show that PLDs transform space, particularly by overlapping public and private appropriations of the bus. I use these empirical findings to discuss the PLD phenomenon in the theoretical context of spatiality, and more specifically, acoustic space. J develop the ontological notion of acoustic space, stating that space shares many of the properties of sound, and argue that sound is a rich epistemological tool for understanding and explaining our everyday experiences.

Localization and function of the endocannabinoid system throughout the retinogeniculate pathway of vervet monkeys

Le système endocannabinoïde (eCB) est présent dans le système nerveux central (SNC) de mammifères, incluant la rétine, et est responsable de la régulation de nombreux processus physiologiques. Bien que la présence du récepteur cannabinoïde de type 1 (CB1R) a bien été documenté dans la rétine de rongeurs et primates, il y a encore une controverse quant à la présence du récepteur cannabinoïde de type 2 (CB2R) au niveau du SNC. En utilisant la microscopie confocale, nous sommes les premiers à signaler les patrons d’expression du CB2R dans la rétine de singe. Nos résultats démontrent que le CB2R est exprimé exclusivement dans les cellules de Müller de la rétine du singe. En outre, nous avons comparé les différents patrons d’expression du système eCB dans la rétine de la souris, du toupaye, ainsi que du singe vervet et macaque. Nous rapportons que les distributions de CB1R, FAAH (fatty acid amid hydrolase), MAGL (monoacylglycerol lipase) et DAGLα (diacylglycerol lipase alpha) sont hautement conservées parmi ces espèces alors que CB2R et NAPE-PLD (N-acyl phosphatidylethanolamine phospholipase D) présentent différents profils d'expression. CB2R n'a pas été détecté dans les cellules neuronales de la rétine des primates. L’immunoréactivité de NAPE-PLD est présente dans les couches de la rétine de souris et toupayes, mais a été limitée à la couche des photorécepteurs des singes vervet et macaque. Pour étudier les corrélats neuronaux et le rôle de la signalisation du système eCB dans la rétine, nous avons établi un protocole standard pour l'électrorétinographie (ERG), puis enregistré la réponse ERG de la rétine après le blocage des récepteurs avec des antagonistes spécifiques pour CB1R (AM251) et CB2R (AM630). Comparé au témoin, dans des conditions photopiques, et à certaines intensités faibles du stimulus, le blocage de CB1R diminue l'amplitude de l'onde-b, alors qu’à des intensités plus élevées, le blocage de CB2R augmente l'amplitude des deux-ondes a et b. De plus, le blocage des récepteurs cannabinoïdes provoque une augmentation de la latence des deux ondes a et b. Dans des conditions d’adaptation à l'obscurité, le blocage de CB1R et CB2R réduit l’amplitudes de l'onde a seulement à des intensités plus élevées et réduit l’onde b à intensités plus faibles. Des augmentations significatives de latence ont été observées dans les deux cas. Ces résultats indiquent que les récepteurs CB1 et CB2 chez les primates non humains sont impliqués dans la fonction rétinienne conditions photopiques. En outre, nous avons évalué le profil d'expression du CB1R, de FAAH et de NAPE-PLD au-delà de la rétine dans le corps géniculé latéral des singes et nous rapportons pour la première fois que CB1R et FAAH sont exprimés davantage dans les couches magnocellulaires. La NAPE-PLD a été localisée à travers les couches magno- et parvocellulaires. Aucune de ces composantes n’est exprimée dans les couches koniocellulaires. Ces résultats nous aident à mieux comprendre les effets des cannabinoïdes sur le système visuel qui pourraient nous mener à trouver éventuellement de nouvelles cibles thérapeutiques.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Electrical and Optical Properties of Znga2o4 Thin Films Deposited By Pulsed Laser Deposition

ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements.

Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors

This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.

Synthesis and characterization of 3d-transition metals doped ZnO thin films and nanostructures for possible spintronic applications

The objective of the present study is the formation of single phase Zn1−xTMxO thin films by PLD and increase the solubility limit of TM dopants. The TM doped ZnO nanostructures were also grown by hydrothermal method. The structural and morphological variation of ZnO:TM thin films and nanostructures with TM doping concentration is also investigated. The origin and enhancement of ferromagnetism in single phase Zn1−xTMxO thin films and nanostructures using spectroscopic techniques were also studied. The dependence of ablation parameters on the structural and optical properties of ZnO thin films were studied

Regulation of phospholipases C and D in rat ventricular myocytes: stimulation by endothelin-1, bradykinin and phenylephrine.

The physiological activator of protein kinase C (PKC), diacylglycerol, is formed by hydrolysis of phosphoinositides (PI) by phospholipase C (PLC) or phosphatidylcholine by phospholipase D (PLD). We have measured activation of these phospholipases by endothelin-1 (ET-1), bradykinin (BK), or phenylephrine (PE) in ventricular myocytes cultured from neonatal rat. The stimulation of PI hydrolysis after 10 min by 0.1 microM ET-1 (about 12-fold) was much greater than for BK or PE (each about four-fold), and did not correlate with translocation of nPKC delta or nPKC epsilon (Clerk A. Bogoyevitch MA. Andersson MB. Sugden PH, 1994. J Biol Chem 269: 32848-32857: Clerk A, Gillespie-Brown J, Fuller SJ, Sugden PH, 1996. Biochem J 317: 109-118). However, ET-1 and BK stimulated a similar rapid increase in [3H]InsP, formation (< 30 s), which was much greater than that seen with PE. This early phase correlated with PKC translocation. Acute or chronic exposure to 12-O-tetradecanoylphorbol-13-acetate (TPA) or treatment with Ro-31-8220 showed that the stimulation of PI hydrolysis by PE, but not ET-1 or BK, was inhibited by activation of PKC. Furthermore, ET-1 and BK heterologously desensitized the stimulation of PI hydrolysis by PE, ET-1 or BK homologously uncoupled their own receptors from [3H]InsP3 formation, but there was no evidence of heterologous desensitization with these two agonists. Anomalously, chronic exposure to TPA increased the stimulation of PI hydrolysis by BK, but this probably resulted from an increase in BK receptor density. PLD was also rapidly activated by TPA. ET-1, BK or PE. Experiments with Ro-31-8220 showed that the stimulation of PLD by ET-1 and BK was mediated through activation of PKC. We discuss the characteristics of the activation of PI hydrolysis and PLD by ET-1, BK, and PE with respect to the translocation of PKC.