219 resultados para Nanoimprint lithography


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A Wissner piano is shown in a piano tuning classroom at the New York Trade School. Wissner pianos were manufactured in Brooklyn from 1878 until the company went out of business at the start of World War II. Black and white photograph.

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A camera class in the Lithography Department of the New York Trade School poses for a group photo. Black and white photograph mounted on paper.

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A group of students from the New York Trade School studying lithography pose for a group photo. Black and white photograph mounted on paper.

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Students are from the Lithography Department of the New York Trade School are shown working in a lab. Black and white photograph that has some writing along the outer edge.

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Here a professor in the Piano Crafts Department at the New York Trade School is shown helping a student. Black and white photograph.

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This photo of the Lithographic Technical Forum shows the booth of the Lithographic Technical Foundation, Inc. The foundation was founded in 1924 to foster research and education in the lithography industry. The slogan "Research to improve lithography . . . Education to improve craft skill" can be seen at the very top of the booth. A group of people are depicted looking at the range of educational material about lithography on display. Black and white photograph.

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Several people are looking at sample prints in this photograph of the Lithographic Technical Forum. In the background the booth for the Lithographic Technical Foundation, Inc. can be seen. Black and white photograph.

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A person is shown demonstrating projection of an image at the Lithographic Technical Forum. Black and white photograph.

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Three people are posed in front of the Lithographic Technical Foundation, Inc. booth at the Lithographic Technical Forum. The Lithographic Technical Foundation was founded in 1924 as an industry organization to promote research and education. In the 1960s the foundation changed its name to the Graphic Arts Technical Foundation and in the late 1990s merged with Printing Industry America. The organization ha a number of educational materials about lithography on display. Black and white photograph.

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Two men are pictured standing outside the entrance to the Lithographic Technical Forum. It is unclear whether or not the forum was held at the New York Trade School. Black and white photograph.

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This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO2 (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO2, in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.

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Thin films of chemically synthesized polyaniline and poly(o-methoxyaniline) were exposed to ionizing X-ray radiation and characterized by radiation induced conductivity measurements, ultraviolet-visible spectroscopy, electron paramagnetic resonance, electrical conductivity and solubility measurements. Samples irradiated in vacuum or dry Oxygen atmosphere did not have their electronic spectra changed. However, under humid atmosphere the energy of the excitonic transition was decreased and accompanied by a great conductivity increase. The results indicate that doping of polyaniline can be induced by X-ray radiation which might be of great interest for applications on lithography and microelectronics.

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Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

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This paper by R. E. Catai, E. C. Bianchi, P. R de Águia and M. C. Alves reports on the results of an analysis made of roundness errors, residual stresses, and SEM micrographs of VC131 steel. The analysis involved workpieces ground with two types of cutting fluid: synthetic cutting fluid and emulsive oil. In this study, the cutting parameters were kept constant while the type of cutting fluid was varied. The amount of cutting fluid injected in the process was also varied, aiming to identify the ideal amount required to obtain good results without causing structural damage to the workpiece. The SEM analyses of roundness errors and residual stresses revealed that, of the two cutting fluids, emulsive oil provided better tensions due to its greater lubricating power.

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Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2013 Elsevier B.V. All rights reserved.