987 resultados para NONPLANAR DISTORTION


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An investigation was carried out into the effects of variable inlet guide vanes (VIGVs) on the performance and stability margin of a transonic fan in the presence of inlet flow distortion. The study was carried out using computational fluid dynamics (CFD) and validated with experimental data. The capability of CFD to predict the changes in performance with or without VIGVs in the presence of an inlet flow distortion is assessed. Results show that the VIGVs improve the performance and stability margin and do so by reducing the amount of swirl at inlet to the rotor component of the fan.

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The viability of Boundary Layer Ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60-degree inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect which occurs throughout the annulus despite the localised nature of the inlet distortion. Increased loss generation in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. Copyright © 2012 by ASME.

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The viability of boundary layer ingesting (BLI) engines for future aircraft propulsion is dependent on the ability to design robust, efficient engine fan systems for operation with continuously distorted inlet flow. A key step in this process is to develop an understanding of the specific mechanisms by which an inlet distortion affects the performance of a fan stage. In this paper, detailed full-annulus experimental measurements of the flow field within a low-speed fan stage operating with a continuous 60 deg inlet stagnation pressure distortion are presented. These results are used to describe the three-dimensional fluid mechanics governing the interaction between the fan and the distortion and to make a quantitative assessment of the impact on loss generation within the fan. A 5.3 percentage point reduction in stage total-to-total efficiency is observed as a result of the inlet distortion. The reduction in performance is shown to be dominated by increased loss generation in the rotor due to off-design incidence values at its leading edge, an effect that occurs throughout the annulus despite the localized nature of the inlet distortion. Increased loss in the stator row is also observed due to flow separations that are shown to be caused by whirl angle distortion at rotor exit. By addressing these losses, it should be possible to achieve improved efficiency in BLI fan systems. © 2013 by ASME.

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RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © OSA/ CLEO 2011.

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Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

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With conventional photolithography and wet chemical etching, we have realized GaAs/AlGaAs buried ridge-quantum-well-wires (RQWWs) with vertically stacked wires in lateral arrays promising for device application, which were grown in situ by a single-step molecular beam epitaxy growth and formed at the ridge tops of mesas on nonplanar substrates. Confocal photoluminescence (CPL) and polarization-dependent photoreflectance (PR) are applied to study optical characteristics of RQWWs. Lateral bandgap modulation due to lateral variation of QW layer thickness is demonstrated not only by CPL but also by PR. As one evidence for RQWWs, a large blue shift is observed at the energy level positions for electronic transitions corresponding to quantum wells (QWs) at the ridge tops of mesas compared with those corresponding to QWs on nonpatterned areas of the same sample. The blue shift is in contradiction with the fact that the GaAs QW layers at the tops of the mesas are thicker than those on nonpatterned areas. The other evidence for RQWWs, optical anisotropy is provided by the polarization-dependent PR, which results from lateral quantum size effect existing at the tops of the mesas.

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A fully-differential switched-capacitor sample-and-hold (S/H) circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter (ADC) was designed and fabricated using a 0.35-μm CMOS process. Capacitor fliparound architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier (OTA) was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range (SFDR) of 67 dB and a signal-to-noise ratio (SNR) of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12 mm~2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

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A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.