298 resultados para Microelectronics


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The best field emission properties from carbon nanotube cathodes were obtained when their heights, diameters and spacings were optimized. Field emission currents as high as 10 mA were obtained from 1 cm × 1 cm vertically aligned CNT cathode with optimized parameters grown using dc plasma CVD in situ. It was found that in order to obtain large emission current of >10 mA, space charge effects within the electron beam must be taken into account.

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Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

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Carbon nanotubes (CNTs) have good mechanical properties and unique structural, electronic, thermal, and optical characteristics. In this work, we present the results of our investigations of a resonator device based on embedded vertical CNT arrays. The device's design is based on the mechanical resonance of the tubes. CoventorWare FEA tools have been used to simulate the mechanical resonance frequencies of the vertical nanotubes arrays integrated on a silicon substrate. ©2008 IEEE.

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The spinning off of Cambridge Semiconductor Ltd (Camsemi) from the High Voltage Microelectronics Lab at Cambridge University is discussed. The technology originated from Cambridge University and was subsequently developed and commercialized as PowerBrane by Camsemi. The paper also discusses the business model and the enabling financial factors that led to the formation of Camsemi as a fables IC company, including access to seed funding from University and the subsequent investments of venture capital in several rounds. © 2011 IEEE.

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The field emissions from three different types of carbon films are studied using a Kiethly voltage-current source-measure unit under computer control. The three types of carbon films are : 1) a-C:H:N deposited using an inductively coupled rf PECVD process, where the N content in the films can be as high as 30 at %; 2) cathodic arc deposited tetrahedral amorphous carbon with embedded regions of carbon nanotube and anion structures and 3) unoriented carbon nanotube films on a porous substrate. The films are formed by filtering a solution of nanotubes dispersed in alcohol through the pores and drying.

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One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNTinorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O 3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Lowloss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Currentvoltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectriccarbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices. © 2012 IOP Publishing Ltd.

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This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

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Using variational methods, we establish conditions for the nonlinear stability of adhesive states between an elastica and a rigid halfspace. The treatment produces coupled criteria for adhesion and buckling instabilities by exploiting classical techniques from Legendre and Jacobi. Three examples that arise in a broad range of engineered systems, from microelectronics to biologically inspired fiber array adhesion, are used to illuminate the stability criteria. The first example illustrates buckling instabilities in adhered rods, while the second shows the instability of a peeling process and the third illustrates the stability of a shear-induced adhesion. The latter examples can also be used to explain how microfiber array adhesives can be activated by shearing and deactivated by peeling. The nonlinear stability criteria developed in this paper are also compared to other treatments. © 2012 Elsevier Ltd. All rights reserved.

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Widespread approaches to fabricate surfaces with robust micro- and nanostructured topographies have been stimulated by opportunities to enhance interface performance by combining physical and chemical effects. In particular, arrays of asymmetric surface features, such as arrays of grooves, inclined pillars, and helical protrusions, have been shown to impart unique anisotropy in properties including wetting, adhesion, thermal and/or electrical conductivity, optical activity, and capability to direct cell growth. These properties are of wide interest for applications including energy conversion, microelectronics, chemical and biological sensing, and bioengineering. However, fabrication of asymmetric surface features often pushes the limits of traditional etching and deposition techniques, making it challenging to produce the desired surfaces in a scalable and cost-effective manner. We review and classify approaches to fabricate arrays of asymmetric 2D and 3D surface features, in polymers, metals, and ceramics. Analytical and empirical relationships among geometries, materials, and surface properties are discussed, especially in the context of the applications mentioned above. Further, opportunities for new fabrication methods that combine lithography with principles of self-assembly are identified, aiming to establish design principles for fabrication of arbitrary 3D surface textures over large areas. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.