Comparison of TiO2 and ZrO2 films deposited by electron-beam evaporation and by sol-gel process

TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel Elms have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the Elm, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Influence of substrate temperature on properties of MgF2 coatings

Thermal boat evaporation was employed to prepare MgF2 single-layer coatings upon both JGS1 and UBK7 substrates at different substrate temperatures. Microstructure, transmittance and residual stress of these coatings were measured by X-ray diffraction, spectrophotometer, and optical interferometer, respectively. Measurement of laser induced damage threshold (LIDT) of the samples was performed at 355 nm, 8 ns pulses. The results showed that high substrate temperature was beneficial to crystallization of the film. Above 244 degrees C, the refractive index increased gradually with the substrate temperature rising. Whereas, it was exceptional at 210 degrees C that the refractive index was higher than those deposited at 244 and 277 degrees C. The tensile residual stresses were exhibited in all MgF2 films, but not well correlated with the substrate temperature. In addition, the stresses were comparatively smaller upon JGS1 substrates. A tendency could be seen that the LIDTs reached the highest values at about 244 degrees C, and the films upon JGS1 had higher LIDTs than those upon UBK7 substrates at the same temperature. Meanwhile, the damage morphologies showed that the laser damage of the coating resulted from an absorbing center at the film-substrate interface. The features of the damages were displayed by an absorbing center dominated model. Furthermore, the reason of the difference in LIDT values was discussed in detail. (C) 2007 Elsevier B.V. All rights reserved.

三倍频分光膜在1064 nm的破斑特性研究

采用电子束蒸发方式制备了两种不同材料组合的分光膜,分别对其在波长1064 nm激光辐照下的损伤阈值进行了测试,用Alpha-Step 500台阶仪对破斑进行了深度测量。实验结果表明,破斑呈现出表面层的剥落和深坑破坏两种形态。表面层的剥落深度在一定范围内不随能量密度的变化而变化；深坑破坏深浅不一,是膜内缺陷融化、汽化及喷发的综合作用的结果,是损伤阈值降低的主要原因。

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜，并分别用两种后处理方法（空气中退火和氧等离子体轰击）对样品进行了处理．然后，对样品的透过率、吸收和抗激光损伤阈值进行了测试分析．实验结果表明，两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值．实验结果还表明，氧等离子体轰击的后处理效果明显优于热退火，样品的吸收平均值在氧等离子体后处理前后分别为34．8ppm和9．0ppm，而基频（1 064nm）激光损伤阈值分别为10．0J／cm^2和21．4J／cm^2．

离子束辅助反应制备的氧化铪薄膜特性

采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

多层介质膜脉冲宽度压缩光栅与超短脉冲作用时的性能分析

基于啁啾脉冲放大技术的超短脉冲激光系统是提供超快、超强激光的重要途径，具有良好输出波形和高损伤阈值的多层介质膜脉冲宽度压缩光栅是获得高峰值功率脉冲激光的关键。基于傅里叶谱变换方法和严格模式理论，分析了多层介质膜光栅（MDG）在超短脉冲作用下的光学特性。结果表明，当MDG的反射带宽小于具有高斯分布的入射脉冲的频谱宽度时，-1级反射脉冲呈非对称高斯分布，其前沿出现振荡，并且-1级反射脉冲能量开始剧烈下降，讨论了MDG结构参数对其反射带宽的影响。分析了MDG与超短脉冲作用时的近场光分布，对提高其抗激光损伤特性具

真空室内金属杂质污染对光学薄膜性能的影响

真空室内金属粒子污染是降低激光薄膜性能的一个重要因素。采用高真空残余气体分析仪,对薄膜沉积过程中的气氛进行分析。发现由黄铜制作的加热灯架在工作时会分解出Zn,在这种条件下沉积薄膜,会使薄膜中掺入金属杂质,导致薄膜激光破坏阈值降低。采用表面分析技术对薄膜的组分进行分析,证实薄膜中锌杂质的存在。激光破坏实验证明,含有锌杂质的薄膜的破坏阈值明显降低。

沉积速率对热舟蒸发LaF3薄膜性能的影响

用热舟蒸发方法在不同的沉积速率下制备了LaF3单层膜,并对部分单层膜进行了真空退火。分别采用X射线衍射(XRD),Lambda 900 光谱仪和355 nm Nd∶YAG脉冲激光测试了薄膜的晶体结构、透射光谱和激光损伤阈值(LIDT),并通过透射光谱计算得到样品的折射率和消光系数。实验结果表明,增大沉积速率有利于LaF3薄膜的结晶和择优生长,可以提高薄膜的致密性和折射率,但薄膜的抗激光损伤能力有所下降;沉积速率太大,又会恶化薄膜的结晶性能,同时薄膜中产生大量孔洞,薄膜的机械强度降低,导致薄膜的折射率减小和

沉积温度对热舟蒸发MgF2薄膜性能的影响

采用热舟蒸发方法沉积了氟化镁（MgF2）材料的单层膜，沉积温度从200℃上升到350℃，间隔为50℃。测量了样品的透射率和反射率光谱曲线，进行了表面粗糙度的标定，并在此基础上进行了光学损耗及散射损耗的计算。同时对355nm波长处的激光诱导损伤阈值进行了测量。结果表明：随着沉积温度的升高，光学损耗增加;在短波长范围散射损耗在光学损耗中所占比例很小，光学损耗的增加主要由吸收损耗引起；在355nm波长处的损伤阈值变化与吸收损耗的变化趋势相关，损伤机制主要是吸收起主导作用。样品的微缺陷密度也是影响损伤阈值的一个重要因素，损伤阈值随缺陷密度的增加而降低。

Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd: YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LID T of Al2O3 thin film.

引入过渡层提高介质减反膜的抗激光损伤阈值

提出了一种用于提高介质减反膜的损伤阈值的新的方法，在H2.5L (H:HfO2, L:SiO2)的膜层与基底之间引入4个1/4光学厚度的SiO2薄膜，发现抗激光损伤阈值提高了50%，并且保持1064nm处的反射率低于0.09%。本文分析了造成这一提高的机制，一定厚度的氧化硅过渡层的引入是一种提高介质减反膜的损伤阈值的灵活有效的方法。

SiO2保护层和退火对Ta2O5薄膜激光损伤阈值影响的对比研究

Ta2O5薄膜采用传统的电子束蒸发方法沉积在BK7基底上。文中对SiO2保护层和退火对Ta2O5薄膜的激光损伤阈值的不同影响进行了研究。结果表明，SiO2保护层不会影响薄膜内的电场分布，薄膜微结构和微缺陷密度，但是会使薄膜的吸收稍微增大；而退火对降低薄膜的微缺陷密度和吸收较有效。SiO2保护层和退火都有利于提高Ta2O5薄膜的抗激光损伤能力，并且退火对提高阈值的影响更为明显。此外，采用SiO2保护层和退火结合的方法，获得了具有最大激光损伤阈值的薄膜。

不同方法制备的Ta_2O_5薄膜光学性能和激光损伤阈值的对比分析

采用电子束蒸发(EBE)和离子束溅射(IBS)制备了不同的Ta_2O_5薄膜,同时对电子束蒸发制备的薄膜进行了退火处理。研究了制备的Ta_2O_5薄膜的光学性能、激光损伤阈值(LIDT)、吸收、散射、粗糙度、微缺陷密度和杂质含量。结果表明,退火可使电子束蒸发制备的薄膜的光学性能得到改善,接近离子束溅射的薄膜的光学性能。电子束蒸发制备的薄膜的损伤阈值较低的主要原因在于吸收大,微缺陷密度和杂质含量高,而与薄膜的散射和粗糙度关系不大。退火后薄膜的吸收和微缺陷密度都明显降低,损伤阈值得到提高。退火后的薄膜损伤阈值仍然低于溅射得到的薄膜损伤阈值是因为退火并不能降低膜内的杂质含量,因此选用高纯度的蒸发膜料和减少电子束蒸发过程中的污染有可能进一步提高薄膜的损伤阈值。