Electrical devices obtained from polymeric precursors process

Nowadays, many investments have been made in the area of superconductor materials, with the aim to improve their potential technological applications. Applications on the energy transport using cables, to get high resolution images in the medicine use high magnetic fields, high speed signals use superconductor devices all of them are in crescent evidence and they are showing that the future is coming and next for this new kind of materials. Obviously that everything of this is possible due to the increasing of research with new materials, where the synthesis, characterization and applications are of the mainly objective of these researches. The production of cable for the energy transport has been in advanced stage as the bulks production is too. However, the film production that to aim at the electronic devices area is not as developed or it still need expensive investments. Thinking about that, we are developing a research where we may increase the relation of cost/benefits. Thereby, we are applying the polymeric precursors method to obtain films that will be used in the built of electronic devices. Thin films (mono and multilayers, on crystalline or metallic substrates, controlled thickness) of the BSCCO system have been obtained from dip coating deposition process with excellent results in terms of preferential orientation, controlled thickness, a large area, which may indicate future applications. Based on these results, we present an electrical circuit and their principal characteristics as superconductor transition (85K), transport current density and structure. DC four probes method, scanning electron microscopy, digital optical microscopy and X-ray diffractometry were some techniques used for the characterization of this superconductor electric device. © 2006 Materials Research Society.

Short-distance part of the interaction of D mesons and nucleons

The short-distance part of the low energy interaction of D-mesons and nucleons is investigated in the context of a quark model. The quark model is based on Coulomb gauge QCD. The model contains a confining Coulomb potential and a transverse hyperfine interaction consistent with a finite gluon propagator in the infrared. The basic mechanism for the short-distance interaction between the D-mesons and nucleons is quark interchange. Using Resonating GroupMethod techniques an effective potential for the interaction between nucleons and D mesons can be obtained and used in a Lippmann-Schwinger equation to obtain differential cross-sections and phase shifts.

The interaction of D mesons and nucleons at finite density

We present results on the the influence of changes in the masses and sizes of D mesons and nucleons on elastic DN scattering cross sections and phase shifts in a hadronic medium composed of confined quarks in nucleons. We evaluate the changes of the hadronic masses due to changes of the light constituent quarks at finite baryon density using a chiral quark model based on Coulomb gauge QCD. The model contains a confining Coulomb potential and a transverse hyperfine interaction consistent with a finite gluon propagator in the infrared. We present results for the total cross section and the s-wave phase shift at low energies for isospin I=1-for I=0 and other partial waves the results are similar.

To estimate the electric field near electric energy transmission systems by use simple software

The main objective this article is describe a methodology for the calculation of the profile of the electric field in the level soil and proximities originated by electric energy transmission systems real and in operation in the country. It also is commented the equation used and your computational implementation in order to agile and to optimize the studies. The results of simulations were just presented for the transmission system in the voltage class 500 kV for simplify the understanding and space restriction in the article, very although five others types of configurations have also been used in the complete study with very voltages and respective classes. The results were animating and very nearby of values well-known of electric field of other and publications traditional in the area. The graphic exits of program for better visual comprehension and understanding went in accomplished in the plan and in the space © 2010 IEEE.

Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion

In this paper, we demonstrate that the intrinsic electric field created by a poly(o-methoxyaniline) (POMA) cushion layer hinders the changes in molecular conformation of poly(p-phenylenevinylene) (PPV) in layer-by-layer with dodecylbenzene sulfonic acid (DBS). This was modeled with density functional theory (DFT) calculations where an energy barrier hampered molecular movements of PPV segments when they were subjected to an electric field comparable to that caused by a charged POMA layer. With restricted changes in molecular conformation, the PPV film exhibited Franck-Condon transitions and the photoexcitation spectra resembled the absorption spectra, in contrast to PPV/DBS films deposited directly on glass, with no POMA cushion. Other effects from the POMA cushion were the reduced number of structural defects, confirmed with Raman spectroscopy, and an enhanced PPV emission at high temperatures (300 K) in comparison with the films on bare glass. The positive effects from the POMA cushion may be exploited for enhanced opto-electronic devices, especially as the intrinsic electric field may assist in separating photoexcited electron-hole pairs in photovoltaic devices. © 2013 American Institute of Physics.

Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Estudo de transições de fases estruturais nos sistemas PZT e PMN-PT por espectroscopia no infravermelho e espectroscopia de impedância

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Spherical, cylindrical and tetrahedral symmetries; hydrogenic states at high magnetic field in Si:P

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Bilayer graphene on h-BN substrate: investigating the breakdown voltage and tuning the bandgap by electric field

By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order.

Quantum motion in superposition of Aharonov-Bohm with some additional electromagnetic fields

The structure of additional electromagnetic fields to the Aharonov-Bohm field, for which the Schrodinger, Klein-Gordon, and Dirac equations can be solved exactly are described and the corresponding exact solutions are found. It is demonstrated that aside from the known cases (a constant and uniform magnetic field that is parallel to the Aharonov-Bohm solenoid, a static spherically symmetrical electric field, and the field of a magnetic monopole), there are broad classes of additional fields. Among these new additional fields we have physically interesting electric fields acting during a finite time or localized in a restricted region of space. There are additional time-dependent uniform and isotropic electric fields that allow exact solutions of the Schrodinger equation. In the relativistic case there are additional electric fields propagating along the Aharonov-Bohm solenoid with arbitrary electric pulse shape. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714352]

Disposable polyester-toner electrophoresis microchips for DNA analysis

Microchip electrophoresis has become a powerful tool for DNA separation, offering all of the advantages typically associated with miniaturized techniques: high speed, high resolution, ease of automation, and great versatility for both routine and research applications. Various substrate materials have been used to produce microchips for DNA separations, including conventional (glass, silicon, and quartz) and alternative (polymers) platforms. In this study, we perform DNA separation in a simple and low-cost polyester-toner (PeT)-based electrophoresis microchip. PeT devices were fabricated by a direct-printing process using a 600 dpi-resolution laser printer. DNA separations were performed on PeT chip with channels filled with polymer solutions (0.5% m/v hydroxyethylcellulose or hydroxypropylcellulose) at electric fields ranging from 100 to 300Vcm(-1). Separation of DNA fragments between 100 and 1000 bp, with good correlation of the size of DNA fragments and mobility, was achieved in this system. Although the mobility increased with increasing electric field, separations showed the same profile regardless of the electric field. The system provided good separation efficiency (215 000 plates per m for the 500 bp fragment) and the separation was completed in 4 min for 1000 bp fragment ladder. The cost of a given chip is approximately $0.15 and it takes less than 10 minutes to prepare a single device.

Cytotoxicity tests for nanostructured chitosan/PEO membranes using the agar diffusion method

Electrospinning is used to produce fibers in the nanometer range by stretching a polymeric jet using electric fields of high magnitude. Chitosan is an abundant natural polymer that can be used to obtain biocompatible nanostructured membranes. The objectives of this work were to obtain nanostructured membranes based on blends of chitosan and polyoxyethylene (PEO), and evaluate their thermal and morphological properties, as well as their in vitro biocompatibility by agar diffusion cytotoxicity tests for three different cell lines. A nanostructured fibrous membrane with fiber diameters in the order of 200 nm was obtained, which presented a rough surface and thickness ranging from one to two millimeters. The results of the cytotoxicity tests evidenced that the chitosan/PEO membranes are non-toxic to the cells studied in this work. Further, the electrospinning technique was effective in obtaining nanostructured chitosan/PEO membranes, which showed biocompatibility according to in vitro preliminary tests using the cell lines.

Elektrorheologie homogener Systeme

Zusammenfassung: Thema dieser Arbeit ist der Einfluss von elektrischen Feldern auf die Viskosität nematischer Flüssigkristalle sowie isotroper Polymerlösungen.Für zwei thermotrope nematische Flüssigkristalle, 4-(trans-4'-n-Pentylcyclohexyl)-benzonitril (PCH-5) und 4-n-Pentyl-4'-cyanobiphenyl (5CB), wurde die Viskosität mit elektrorheologischen Messungen in Abhängigkeit von Feldstärke und Scherrate bestimmt. Alle Messwerte kommen bei Auftragung gegen E?/? auf einer Masterkurve zu liegen. Die Anpassung dieser Daten mit einer auf der Theorie von Ericksen und Leslie basierenden Gleichung liefert gleichzeitig die Scherviskositäten ? und ? sowie die Rotationsviskosität ? in guter Übereinstimmung mit Literaturwerten. Elektrorheologische Messungen stellen somit eine Methode zur Bestimmung dieser Viskositätskoeffizienten für Nematen dar, wenn diese eine ausreichend große positive dielektrische Anisotropie aufweisen. Bei den isotropen Polymerlösungen ließ sich der elektrorheologische Effekt des Systems Decalin/Polystyrol im Bereich der Entmischungstemperatur klären. Während im Ein-Phasen-Gebiet nur eine geringe Viskositätsänderung im E-Feld aufgrund elektrohydrodynamischer Strömungen zu beobachten ist, tritt unterhalb der Entmischungstemperatur ein deutlicher, aber nicht reproduzierbarer ER-Effekt auf. Dieser ist auf einen Einfluss des E-Felds auf die Zwei-Phasen-Morphologie zurückzuführen.Für das System Diethylbenzol/Isopentylcellulose wurde ein negativer elektrorheologischer Effekt auf die Dissoziation von assoziierten Polymermolekülen zurückgeführt. Die Dissoziation erfolgt aufgrund der Wirkung des elektrischen Feldes auf freie Ladungen.

Optische Spektroskopie an Fermium (Z=100)

Im Rahmen der vorliegenden Arbeit wurde erstmals Laser-Atomspektroskopie an einem Element durchgeführt, für das bisher keine atomaren Niveaus bekannt waren. Die Experimente wurden am Element Fermium mit der Ordnungszahl Z=100 mit der Resonanzionisationsspektroskopie (RIS) in einer Puffergaszelle durchgeführt. Verwendet wurde das Isotop 255Fm mit einer Halbwertszeit von 20.1 h, das im Hochflusskernreaktor des ORNL, Oak Ridge, USA, hergestellt wurde. Die von einem elektrochemischen Filament in das Argon-Puffergas bei einer Temperatur von 960(20)°C abgedampften Fm-Atome wurden mit Lasern in einem Zweistufenprozess resonant ionisiert. Dazu wurde das Licht eines Excimerlaser gepumpten Farbstofflasers für den ersten Anregungsschritt um die Wellenlänge 400 nm durchgestimmt. Ein Teil des Excimer (XeF) Laser Pumplichtes mit den Wellenlänge 351/353 nm wurde für die nicht-resonante Ionisation verwendet. Die Ionen wurden mit Hilfe elektrischer Felder aus der optischen Zelle extrahiert und nach einem Quadrupol Massenfilter mit einem Channeltron-Detektor massenselektiv nachgewiesen. Trotz der geringen Probenmenge von 2.7 x 10^10 eingesetzten Atomen wurden zwei atomare Resonanzen bei Energien von 25099.8(2) cm-1 und 25111.8(2) cm-1 gefunden und das Sättigungsverhalten dieser Linien gemessen. Es wurde ein theoretisches Modell entwickelt, dass sowohl das spektrale Profil der sättigungsverbreiterten Linien als auch die Sättigungskurven beschreibt. Durch Anpassung an die Messdaten konnten die partiellen Übergangsraten in den 3H6 Grundzustand Aki=3.6(7) x 10^6/s und Aki=3.6(6) x 10^6/s bestimmt werden. Der Vergleich der Niveauenergien und Übergangsraten mit Multikonfigurations Dirac-Fock Rechnungen legt die spektroskopische Klassifizierung der beobachteten Niveaus als 5f12 7s7p 5I6 und 5G6 Terme nahe. Weiterhin wurde ein Übergang bei 25740 cm-1 gefunden, der aufgrund der beobachteten Linienbreite von 1000 GHz als Rydbergzustand Zustand mit der Niveauenergie 51480 cm-1 interpretiert wurde und über einen Zweiphotonen Prozess angeregt werden kann. Basierend auf dieser Annahme wurde die Obergrenze für die Ionisationsenergie IP = 52140 cm-1 = 6.5 eV abgeschätzt. In den Messungen wurden Verschiebungen in den Zeitverteilungsspektren zwischen den mono-atomaren Ionen Fm+ und Cf+ und dem Molekül-Ion UO+ festgestellt und auf Driftzeitunterschiede im elektrischen Feld der gasgefüllten optischen Zelle zurückgeführt. Unter einfachen Modellannahmen wurde daraus auf die relativen Unterschiede Delta_r(Fm+,Cf+)/r(Cf+) ˜ -0.2 % und Delta_r(UO+,Cf+)/r(Cf+) ˜ 20 % in den Ionenradien geschlossen. Über die Bestimmung der Abnahme der Fm-a Aktivität des Filamentes auf der einen Seite und die Messung der Resonanzzählrate auf der anderen Seite, wurde die Nachweiseffizienz der Apparatur zu 4.5(3) x 10^-4 bestimmt. Die Nachweisapparatur wurde mit dem Ziel weiterentwickelt, Laserspektroskopie am Isotop 251Fm durchzuführen, das über die Reaktion 249Cf(a,2n)251Fm direkt in der optischen Zelle erzeugt werden soll. Das Verfahren wurde am chemischen Homolog Erbium getestet. Dabei wurde das Isotop 163Er über die Reaktion 161Dy(a,2n)163Er erzeugt und nach Resonanzionisation nachgewiesen. Die Nachweiseffizienz der Methode wurde zu 1 x 10^-4 bestimmt.