993 resultados para Floating multiparticles


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We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

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A wooden fishing float under immersion in water for long periods is liable to absorb water, the quantity of water absorbed possibly being dependent upon the physical factors like the specific gravity and the inherent property of the material, the time of soaking and the pressure acting on it. Consequently a wooden float is likely to become heavy and loss its original buoyancy. However, when the float is removed from water and dried, the lost buoyancy is regained on complete drying. The present paper is an attempt to elucidate these two important characteristics of some of the chief wooden floating materials used on the West Coast of India.

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Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.

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Nutrient-rich effluents caused rising concern due to eutrophication of aquatic environment by utilization of a large amount of formula feed. Nutrient removal and water quality were investigated by planting aquatic vegetable on artificial beds in 36-m(2) concrete fishponds. After treatment of 120 days, 30.6% of total nitrogen (TN) and 18.2% of total phosphorus (TP) were removed from the total input nutrients by 6-m(2) aquatic vegetable Ipomoea aquatica. The concentrations of TN, TP, chemical oxygen demand (COD) and chlorophyll a in planted ponds were significantly lower than those in non-planted ponds (P<0.05). Transparency of water in planted ponds was much higher than that of control ponds. No significant differences in the concentration of total ammonia nitrogen (TAN), nitrate nitrogen (NO3-N) and nitrite nitrogen (NO2--N) were found between planted and non-planted ponds. These results suggested that planting aquatic vegetable with one-sixth covered area of the fishponds could efficiently remove nutrient and improve water quality.

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Anode floating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm(2) fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 V) of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p(+) inner ring and the n(+) anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.

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This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.

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Through floating catalyst chemical vapour deposition(CVD) method, well-aligned isolated single-walled carbon nanotubes (SWCNTs) and their bundles were deposited on the metal electrodes patterned on the SiO2/Si surface under ac electric fields at relatively low temperature(280 degrees C). It was indicated that SWCNTs were effectively aligned under ac electric fields after they had just grown in the furnace. The time for a SWCNT to be aligned in the electric field and the effect of gas flow were estimated. Polarized Raman scattering was performed to characterize the aligned structure of SWCNTs. This method would be very useful for the controlled fabrication and preparation of SWCNTs in practical applications.

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This study experimentally explored the fine structures of the successive period-doubling bifurcations of the time-dependent thermocapillary convection in a floating half zone of 10 cSt silicone oil with the diameter d (0)=3.00 mm and the aspect ratio A=l/d (0)=0.72 in terrestrial conditions. The onset of time-dependent thermocapillary convection predominated in this experimental configuration and its subsequent evolution were experimentally detected through the local temperature measurements. The experimental results revealed a sequence of period-doubling bifurcations of the time-dependent thermocapillary convection, similar in some way to one of the routes to chaos for buoyant natural convection. The critical frequencies and the corresponding fractal frequencies were extracted through the real-time analysis of the frequency spectra by Fast-Fourier-Transformation (FFT). The projections of the trajectory onto the reconstructed phase-space were also provided. Furthermore, the experimentally predicted Feigenbaum constants were quite close to the theoretical asymptotic value of 4.669 [Feigenbaum M J. Phys Lett A, 1979, 74: 375-378].

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With the rapid increase of the number and influence of floating population in China, it is urgently needed to understand the regional types of China's floating population and their spatial characteristics. After reviewing the current methods for identifying regional types of floating population, this paper puts forward a new composite-index identification method and its modification version which is consisted of two indexes of the net migration rate and gross migration rate. Then, the traditional single-index and the new composite-index identification methods are empirically tested to explore their spatial patterns and characteristics by using China's 2000 census data at county level. The results show: (1) The composite-index identification method is much better than traditional single-index method because it can measure the migration direction and scale of floating simultaneously, and in particular it can identify the unique regional types of floating population with large scale of immigration and emigration. (2) The modified composite-index identification method, by using the share of a region's certain type of floating population to the total in China as weights, can effectively correct the over- or under-estimated errors due to the rather large or small total population of a region. (3) The spatial patterns of different regional types of China's floating population are closely related to the regional differentiation of their natural environment, population density and socio-economic development level. The three active regional types of floating population are mainly located in the eastern part of China with lower elevation, more than 800 mm precipitation, rather higher population densities and economic development levels.

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Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

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Based on the sequence data of the nuclear ribosomal DNA internal transcribed spacer (ITS) 1, 5.8 S, and ITS 2, the molecular phylogeny was analyzed on Ulvaceae species collected from Qingdao coasts in summer of 2007, including 15 attached Ulva and Enteromorpha samples from 10 locations and 10 free-floating Enteromorpha samples from seven locations. The result supported the monophyly of all free-floating Enteromorpha samples, implying the unialgal composition of the free-floating Enteromorpha, and the attached Ulvaceae species from Qingdao coasts were grouped into other five clades, suggesting that they were not the biogeographic origin of the free-floating Enteromorpha in that season.