914 resultados para Drought relief


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For the 6-year period 1987 through 1992, most of California suffered the worst or near-worst drought in a recorded history of about 140 years. Based on tree ring reconstructions, it may have been the worst in more than 400 years. The purpose of this paper is to review briefly the recent drought, then talk about the water supply situation this year, with some discussion of why the California drought is over hydrologically for most people; but for some, water supply problems continue.

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In 1993, enough rain and snow fell to end the 1987-1992 drought in California, at least in most areas. The 1994 season has again been dry and has given rise to questions about whether the drought has returned. But carryover reservoir storage from 1993 has been good and will be meeting a portion of the state's water needs this year. Concern about 1995 has placed California in a "drought watch" mode for 1994, a stage indicating caution but not yet a full drought.

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The introduction of the controlled hatchery system "Model CIFE D-81" resulted in a production of 60 lakhs Indian major carp seed in the drought area of eastern Uttar Pradesh. The hatchery system provided optimum temperature, dissolved oxygen and pH for breeding and hatching and also removed the metabolites generated. The technology is simple and the success of the program attracts pisciculturists.

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OBJECTIVE: A standard view in health economics is that, although there is no market that determines the "prices" for health states, people can nonetheless associate health states with monetary values (or other scales, such as quality adjusted life year [QALYs] and disability adjusted life year [DALYs]). Such valuations can be used to shape health policy, and a major research challenge is to elicit such values from people; creating experimental "markets" for health states is a theoretically attractive way to address this. We explore the possibility that this framework may be fundamentally flawed-because there may not be any stable values to be revealed. Instead, perhaps people construct ad hoc values, influenced by contextual factors, such as the observed decisions of others. METHOD: The participants bid to buy relief from equally painful electrical shocks to the leg and arm in an experimental health market based on an interactive second-price auction. Thirty subjects were randomly assigned to two experimental conditions where the bids by "others" were manipulated to follow increasing or decreasing price trends for one, but not the other, pain. After the auction, a preference test asked the participants to choose which pain they prefer to experience for a longer duration. RESULTS: Players remained indifferent between the two pain-types throughout the auction. However, their bids were differentially attracted toward what others bid for each pain, with overbidding during decreasing prices and underbidding during increasing prices. CONCLUSION: Health preferences are dissociated from market prices, which are strongly referenced to others' choices. This suggests that the price of health care in a free-market has the capacity to become critically detached from people's underlying preferences.

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Termination of a painful or unpleasant event can be rewarding. However, whether the brain treats relief in a similar way as it treats natural reward is unclear, and the neural processes that underlie its representation as a motivational goal remain poorly understood. We used fMRI (functional magnetic resonance imaging) to investigate how humans learn to generate expectations of pain relief. Using a pavlovian conditioning procedure, we show that subjects experiencing prolonged experimentally induced pain can be conditioned to predict pain relief. This proceeds in a manner consistent with contemporary reward-learning theory (average reward/loss reinforcement learning), reflected by neural activity in the amygdala and midbrain. Furthermore, these reward-like learning signals are mirrored by opposite aversion-like signals in lateral orbitofrontal cortex and anterior cingulate cortex. This dual coding has parallels to 'opponent process' theories in psychology and promotes a formal account of prediction and expectation during pain.

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Photosynthetic activity during rehydration at four temperatures (5, 15, 25, 35 degrees C) was studied in a terrestrial, highly drought-tolerant cyanobacterium, Nostoc flagelliforme. At all the temperatures, the optimum quantum yield F-v/F-m increased rapidly within I It and then increased slowly during the process of rehydration. The increase in F-v/F-m at 25 and 35 degrees C was larger than that at 5 and 15 degrees C. In addition, the changes of initial intensity of fluorescence (F-0) and variable fluorescence (F-v) were more significant at 25 and 35 degrees C than those at 5 and 15 degrees C. Chlorophyll a content increased with the increase of temperature during the course of rehydration, with this being more pronounced at 25 and 35 degrees C. The photosynthetic rates at 25 and 35 degrees C were higher than those at 5 and 15 degrees C. Induction of chlorophyll fluorescence with sustained rewetting at 5 and 15 degrees C had two phases of transformation, whereas at 25 and 35 degrees C it had a third peak kinetic phase and showed typical chlorophyll fluorescence steps on rewetting for 24 h, representing a normal physiological state. A comparison of the chlorophyll fluorescence parameters, chlorophyll a content, and the chlorophyll fluorescence induction led to the conclusion that N. flagelliforme had a more rapid and complete recovery at 25 and 35 degrees C than that at 5 and 15 degrees C, although it could recover its photosynthetic activity at any of the four temperatures. (c) 2007 Published by Elsevier Ltd.

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Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Cubic boron nitride (c-BN) films were prepared by ion beam assisted deposition (IBAD) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-BN samples. To test the possible effects of other factors, dependencies of the c-BN transversal optical mode position on film thickness and c-BN content were investigated. Several methods for reducing the stress of c-BN films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of Si were studied, in which the c-BN films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. It was shown that all the methods can reduce the stress in c-BN films to various extents. Especially, the incorporation of a small amount of Si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 GPa whereas the c-BN content is nearly unaffected, although a slight degradation of the c-BN crystallinity is observed. The stress can be further reduced down below I GPa by combination of the addition of Si with the two-stage deposition process. (c) 2008 Elsevier B.V. All rights reserved.

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We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process.The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) A1N IL lead to a inferior quality in subsequent AlGaN epilayers.