Soft turn-on of NPT IGBT under Active Voltage Control

In this paper the soft turn-on of NPT IGBT under Active Voltage Control (AVC) is presented. The AVC technique is able to control the IGBT switching trajectory according to a pre-defined reference signal generated by a FPGA chip. By applying a special designed reference signal at turn-on, the IGBT turn-on current overshoot and diode recovery can be optimized. Experiments of soft turn-on with different reference signal are presented in this paper. This technique can be used to reduce the switching stress on the device and on other components of the circuit. © 2011 IEEE.

Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.

Turn-off failure mechanism in large area IGCTs

The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.

Modeling turn-off voltage rise in SOI LIGBT

The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.

Optimised IGBT turn-off under active voltage control in PEBB applications

Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force an IGBT to follow a pre-set switching trajectory. Previously, AVC was mainly used for controlling series-connected IGBTs in order to enable voltage balance between IGBTs. In this paper, the nonlinear IGBT turn-off transient is further discussed and the turnoff of a single IGBT under AVC is further optimised in order to meet the demand of Power Electronic Building Block (PEBB) applications. © 2013 IEEE.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

MEASUREMENT AND SIMULATION OF THE TURN-ON DELAY TIME JITTER IN GAIN-SWITCHED SEMICONDUCTOR-LASERS

The turn-on delay time jitter of four different unbiased gain-switched laser types is determined by measuring the temporal probability distribution of the leading edge of the emitted optical pulse. One single-mode 1.5-mu-m distributed feed-back laser and three multimode Fabry-Perot lasers emitting at 750 nm and 1.3-mu-m are investigated. The jitter is found to decrease for all lasers with increasing injection current. For multimode lasers it decreases from 8 ps excited slightly above threshold down to below 2 ps at three times the threshold current. The jitter of the distributed feedback (DFB) laser is a factor of 3-5 larger than the jitter of the three multimode lasers. A new model to predict the turn-on delay time jitter is presented and explains the experiments quantitatively.

Sensitive turn-on fluorescent detection of cyanide based on the dissolution of fluorophore functionalized gold nanoparticles

We report a simple fluorescent method for sensitive cyanide detection based on the dissolution of Rhodamine B-adsorbed gold nanoparticles by cyanide.

Turn-on fluorescent cyanide sensor based on copper ion-modified CdTe quantum dots

A new fluorescent sensor for the sensitive and selective detection of cyanide (CN-) in aqueous media was developed herein. The sensing approach is based on CN--modulated quenching behavior of Cu2+ toward the photoluminescence (PL) of CdTe quantum dots (QDs). In the presence of CN-, the PL of QDs that have been quenched by Cu2+ was found to be efficiently recovered, which then allows the detection of CN- in a very simple approach. Experimental results showed that the pH of the buffer solution, concentration of copper ions, and size of CdTe QDs all influenced the response of the sensor to CN-. Under the optimal conditions, a good linear relationship between the PL intensity and the concentration of CN- can be obtained in the range of 3.0 x 10(-7) to 1.2 x 10(-5) M, with a detection limit as low as 1.5 x 10(-7) M. In addition, the present fluorescent sensor possesses remarkable selectivity for cyanide over other anions, and negligible influences were observed on the cyanide detection by the coexistence of other anions or biological species (such as albumin and typical blood constituents).

Turn-on fluorescent detection of cyanide based on the inner filter effect of silver nanoparticles

A simple, sensitive fluorescent method for detecting cyanide has been developed based on the inner filter effect (IFE) of silver nanoparticles (Ag NPs). With a high extinction coefficient and tunable plasmon absorption feature, Ag NPs are expected to be a powerful absorber to tune the emission of the fluorophore in the IFE-based fluorescent assays. In the present work, we developed a turn-on fluorescent assay for cyanide based on the strong absorption of Ag NPs to both excitation and emission light of an isolated fluorescence indicator. In the presence of cyanide, the absorber Ag NPs will dissolve gradually, which then leads to recovery of the IFE-decreased emission of the fluorophore. The concentration of Ag NPs in the detection system was found to affect the fluorescence response toward cyanide greatly. Under the optimum conditions, the present IFE-based approach can detect cyanide ranging from 5.0 x 10 (7) to 6.0 x 10 (4) M with a detection limit of 2.5 x 10 (7) M, which is much lower than the corresponding absorbance-based approach and compares favorably with other reported fluorescent methods.

Angewandte Kulturwissenschaften – Überlegungen zum Studienprogramm einer akademischen Disziplin nach dem cultural turn im Hinblick auf berufliche Perspektiven

The author tries to attract attention for the careers ant the education of that what we call applied Cultural Studies after the cultural turn in the Humanities. He refers to some empirical studies and tries to put it out how differs the several institutes especially in the German spoken academic world. After all the conclusion of the author could be that there is an big demand for specialists in the area of applied cultural studies. The formation or education has to refer widely to a conception or the terminus of every-day-culture, so that it could be a big help in economic, social and education professions.

From the demise of theory to its resurgence. A retrospective on the postmodern turn to rethink the 'desire for narrative' and the sublime untimeliness of emancipation

Cultural Marxist Theory, commonly known as theory, enjoyed a moment of extraordinary success in the 1970s, when the works of leading post-war French philosophers were published in English. After relocating to Anglophone academia, however, theory disavowed its original concerns and lost its ambition to understand the world as a whole, becoming the play of heterogeneities associated with postcolonialism, multiculturalism and identity politics, commonly referred to as postmodern theory. This turn, which took place during a period that seemed to have spelt the death of Marxism, the 1990s, induced many of its supporters to engage in an ongoing funeral wake designating the merits of theory and dreaming its resurgence. According to them, had theory been resurrected in historical circumstances completely different from those which had led to its rise, it would have never reacquired the significance that had originally connoted it. This thesis demonstrates how theory has survived its demise and entirely regained its prominence in our socio-political context marked by the effects of the latest crisis of capitalism and by the global threat of terrorisms rooted in messianic eschatologies. In its current form theory does no longer need to show allegiance to certain intellectual stances or political groupings in order to produce important reformulations of the projects it once gave life to. Though less overtly radical and epistemologically bounded, theory remains a necessary form of enquiry justified by the political commitment which originated it in the first place. Its voice continues to speak to us about justice ‘where it is not yet, not yet there, where it is no longer’ (Derrida, 1993, XVIII).