936 resultados para CURVE SINGULARITIES
Resumo:
The present study deals with the length increment data of 15 adult Labeo rohita (Ham.) over a period of five months by the applicatin of finite difference method at an altitude of 1496 m above mean sea level at Shilllong, Meghalaya.
Resumo:
The Phase Response Curve (PRC) has proven a useful tool for the reduction of complex oscillator models. It is also an information often experimentally available to the biologist. This paper introduces a numerical tool based on the sensitivity analysis of the PRC to adapt initial model parameters in order to match a particular PRC shape. We illustrate the approach on a simple biochemical model of circadian oscillator. © 2011 IEEE.
Resumo:
The paper discusses elementary control strategies to control the phase of an oscillator. Both feedforward and feedback (P and PI) control laws are designed based on the phase response curve (PRC) calculated from the linearized model. The performance is evaluated on a popular model of circadian oscillations. ©2009 IEEE.
Resumo:
The circumstances are investigated under which high peak acceleration can occur in the internal parts of a system when subjected to impulsive driving on the outside. Previous work using a coupled beam model has highlighted the importance of veering pairs of modes. Such a veering pair can be approximated by a lumped system with two degrees of freedom. The worst case of acceleration amplification is shown to occur when the two oscillators are tuned to the same frequency, and for this case closed-form expressions are derived to show the parameter dependence of the acceleration ratio on the mass ratio and coupling strength. Sensitivity analysis of the eigenvalues and eigenvectors indicates that mass ratio is the most sensitive parameter for altering the veering behaviour in an undamped system. Non-proportional damping is also shown to have a strong influence on the veering behaviour. The study gives design guidelines to allow permissible acceleration levels to be achieved by the choice of the effective mass and damping of the indirectly driven subsystem relative to the directly driven subsystem. © 2013 Elsevier Ltd.
Resumo:
A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.