High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

The annealing behavior of Cu nanoparticles in Ar-ion implanted spinel

Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.

Synthesis and Spectrum of Novel Pyrazoline Fluorescent Compounds

Pyrazoline derivatives have been used widely in dyeing industry as fluorescent whitening agents due to their excellent capability. According to Schellhammer theory of the relation between chemical structure and fluorescent quality, six new fluorescent compounds were designed and synthesized which contained the benzothiazole group in the I-pyrazoline, the indole group in the 3-pyrazoline and the derivatives of phenyl in the 5-pyrazoline. The structure of target compounds was confirmed by IR, H-1 NMR, MS and elementary analysis. The fluorescence spectra showed that these compounds had good fluorescence. They could absorb ultraviolet light at near 353 nm. The fluorescence maximum emission wavelengths were about 430-443 nm. It was a kind of promising fluorescence compounds. The largest fluorescence emission wavelength and the fluorescence intensity were related to the substituted group of the compounds. When the 6-Br group was introduced into benzothiazole, the fluorescence emission wavelength exhibited a blue shift, and the fluorescence intensity increased.

Preparation and luminescent properties of cubic Eu3+ : Y2O3 nanocrystals and comparison to bulk Eu3+ : Y2O3

Y2O3:Eu3+ nanocrystals were prepared by combustion synthesis. The particle size estimated by X-ray powder diffraction (XRD) was about 10 nm. A blue-shift of the charge-transfer (CT) band in excitation spectra was observed in Y2O3:Eu3+ nanocrystals compared with bulk Y2O3:Eu3+. The electronic structure Of Y2O3 is calculated by density functional method and exchange and correlation have been treated by the generalized gradient approximation (GGA) within the scheme due to Perdew-Burke-Ernzerhof (PBE). The calculated results show that the energy centroid of 5d orbital in nanocrystal has increasing trend compared with that in the bulk material. The bond length and bond covalency are calculated by chemical bond theory. The bond lengths of Y2O3:Eu3+ nanocrystal are shorter than those of the bulk counterpart and the bond covalency of Y2O3:Eu3+ nanocrystal also has an increasing trend. By combining centroid shift and crystal-field splitting, the blue-shift of the CT band is interpreted.

Reversibly strain-tunable elastomeric photonic crystals

Reversibly strain-tunable polymeric photonic crystals made of thermoplastic polyester elastomer (TPEE) were fabricated by using the self-assembled silica opals as templates. The stop band of the polymeric photonic crystal locates at the near infrared (IR) regime in its transmission spectrum, and exhibits a blue shift with the increase of the incident angle. Because of the elasticity of the TPEE, the stop band of the TPEE photonic crystal can also be reversibly tuned at ambient temperature through to and fro uniaxially or biaxially stretching and recovering by changing the lattice spacing and the symmetry of the crystal along (1 1 1) plane.

Morphology-controllable synthesis and characterization of single-crystal molybdenum trioxide

Molybdenum trioxide nanobelts and prism-like particles with good crystallinity and high surface areas have been prepared by a facile hydrothermal method, and the morphology could be controlled by using different inorganic salts, such as KNO3, Ca(NO3)(2), La(NO3)(3), etc. The possible growth mechanism of molybdenum trioxide prism-like particles is discussed on the basis of the presence of HI and the modification of metal cations. The as-prepared nanomaterials are characterized by means of powder X-ray diffraction (PXRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), Fourier transformation infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and ultraviolet and visible spectroscopy (UV-vis). TEM and HRTEM micrographs show that the molybdenum trioxide nanobelts and prism-like particles have a relatively high degree of crystallinity and uniformity. BET specific surface areas of the as-prepared molybdenum trioxide nanocrystals are 67-79 m(2)g(-1). XPS analysis indicates that the hexavalent molybdenum is predominant in the nanocrystals. UV-vis spectra reveal that the direct band gap energy of the annealed molybdenum trioxide prism-like particles shows a pronounced blue shift compared to that of bulk MoO3 powder.

Highly efficient iridium(III) complexes with diphenylquinoline ligands for organic light-emitting diodes: Synthesis and effect of fluorinated substitutes on electrochemistry, photophysics and electroluminescence

A series of novel cyclometalated iridium(III) complexes bearing 2,4-diphenylquinoline ligands with fluorinated substituent were prepared and characterized by elemental analysis, NMR and mass spectroscopy. The cyclic voltammetry, absorption, emission and electroluminescent properties of these complexes were systematically investigated. Electrochemical studies showed that the oxidation of the fluorinated complexes occurred at more positive potentials (in the range 0.57-0.69 V) than the unfluorinated complex 1 (0.42 V). In view of the energy level, the lowering of the LUMO by fluorination is significantly less than that of the HOMO. The weak and low energies absorption bands in the range of 300-600 nm are well resolved, likely associated with MLCT and (3)pi-pi* transitions. These complexes show strong orange red emission both in the solution and solid state. The emission maxima of the fluorinated complexes showed blue shift by 9, 24 and 15 nm for 2, 3 and 4, respectively, with respect to the unfluorinated analogous 1. Multilayered organic light-emitting diodes (OLEDs) were fabricated by using the complexes as dopant materials. Significantly higher performance and lower turn-on voltage were achieved using the fluorinated complexes as the emitter than that using the unfluorinated counterpart 1 under the same doping level.

Synthesis and fluorescence properties of Eu2+-doped KMgF3 nanoparticles

The phase diagram of a cetyltrimethyl ammonium bromide( CTAB)/n-butanol/n-octane/KNO3-Mg( NO3)(2) system was drawn. Nanoparticles of Eu2+-doped KMgF3 were prepared from the quaternary microemulsions of cetyltrimethyl ammonium bromide(CTAB), n-butanol, n-octane and water. The X-ray diffraction(XRD) patterns were indexed to a pure KMgF3 cubic phase. The environmental scanning electron microscopic (ESEM) images show the presence of spherical Eu2+-doped KMgF3 nanoparticles with a diameter of ca. 20 nm. The emission of KMgF3: Eu2+ nanoparticles peaks at 360 mn. The excitation band was observed at 250 nm with a blue shift of ca. 70 nm compared with that of KMgF3: Eu2+ single crystal. The preparation method of nano-KMgF3: Eu2+/PMMA composite films was inquired into.

Optical spectroscopy properties of KMgF3 : Eu2+ nanocrystals and powder synthesized by microemulsion and solvothermal process

Nanocrystals and powders of KMgF3 doped with Eu2+ were synthesized by the microemulsion method and the solvothermal process, respectively. The emission and excitation spectra of KMgF3:Eu2+ phosphors were measured and compared with those of the samples synthesized through a solid. state reaction, Bridgman-Stockbarger method, and mild hydrothermal technique. The KMgF3: Eu2+ samples synthesized by means of the microemulsion method and the solvothermal process show only a sharp emission peak located at 360 nm, in the emission spectra, which arises from the f -> f(P-6(1/2)-> S-8(1/2)) transition of Eu2+. The broad emission bands appear at 420 nm,,which arises from Eu2+ <- O2- cannot be observed(in the mild hydrothermal and single crystal samples, the emission peak at 420 nm besides the emission of Eu2+ at 360 nm is observed). In the excitation spectrum of the KMgF3: Eu2+ samples synthesized by the microemulsion method and the solvothermal process, the excitation peaks show an intensive blue shift. The blue shift can he attributed to the lower oxygenic content in the KMgF3: Eu2+ samples synthesized by the microemulsion method and the solvothermal process.