Doping saturation in dye-sensitized solar cells based on ZnO:Ga nanostructured photoanodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A tunable triode-MOSFET transconductor and its application to g(m)-C filters

A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order linear relationship between g(m) and a de bias voltage is achieved. In addition to easy tuning, this technique offers circuit simplicity, wide dynamic range, high input and output impedances and low consumption. The transconductor is presented on both single-ended and fully-differential versions. A 3rd-order elliptical low-pass g(m)-C filter with a nominal roll-off frequency of 2MHz is used as one example for the many applications of the proposed transconductor. SPICE data describe circuits performances and filter tunabilily Passband is tuned at a rate of 2.36KHz/mV and good linearity is indicated by a 0.89% THD for an 800mV(p-p) balanced-driven input.

Numerical simulation of magnetic-field-enhanced plasma immersion ion implantation in cylindrical geometry

Recent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Caracterização de filmes finos obtidos por deposição de vapor químico assistido a plasma (PECVD) e deposição e implantação iônica por imersão em plasma (PIIID)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modelamento do transporte eletrônico em dispositivos moleculares

No presente trabalho, simulamos as propriedades de transporte e espectro de absorção do composto orgânico Vermelho de Etila. Este é o primeiro estudo teórico de um indicador específico de pH utilizado como nanodispositivo, com base na teoria quântica e no modelo de transporte não-difuso. A distribuição de carga ao longo da molécula é determinada através da técnica, Ab initio, como uma função de um campo elétrico externo. Baseado em um modelo de multiníveis ressonantes também calculamos a corrente como função da tensão de polarização. O acúmulo de carga e a corrente apresentam comportamento semelhante, como a condução do tipo ressonante e curvas carga-tensão e corrente-tensão assimétricas. Os principais resultados sugerem que o sistema presente poderia funcionar como um transistor molecular bi-direcional. Estendemos esta metodologia de análise para outro dispositivo molecular, mas composto de três terminais. Para este sistema, nossa descoberta principal é a resistência diferencial negativa (RDN) na carga Q como uma função do campo elétrico externo. Para explicar este efeito RDN, aplicamos um modelo capacitivo fenomenológico, também baseado em um sistema de multiníveis localizados (que podem ser os LUMOs – Lowest Unoccupied Molecular Orbital – Orbitais moleculares desocupados mais baixos). A capacitância descreve, por efeito de carregamento, a causa do bloqueio de Coulomb (BC) no transporte. Mostramos que o efeito BC dá origem a uma RDN para um conjunto adequado de parâmetros fenomenológicos como: taxa de tunelamento e energia de carregamento. O perfil da RDN obtida nas duas metodologias, ab initio e fenomenológica, estão em comum acordo.

Structural and mechanical analysis for the optimization of PVD oxide coatings for protection against metal dusting

The evolution of the structure and properties of Cr/Cr oxide thin films deposited on HK40 steel substrates by reactive magnetron sputtering (RMS) was investigated and linked to their potential protective behavior against metal dusting. Deposition time, mode of oxygen feeding, and application of bias voltage were varied to assess their effect on the density, adhesion, and integrity of the films. All the films showed a very fine columnar microstructure and the presence of amorphous Cr oxide. Both, an increasing time and a constant oxygen flow during deposition led to the development of relatively low density films and mud-like cracking patterns. A graded oxygen flow resulted in films with fewer cracks, but a careful control of the oxygen flow is required to obtain films with a truly graded structure. The effect of the bias voltage was much more significant and beneficial. An increasing negative bias voltage resulted in the development of denser films with a transition to an almost crack-free structure and better adhesion. The amorphous oxide resulted in low values of hardness and Young's modulus. (C) 2012 Elsevier B.V. All rights reserved.

Two-dimensional assembly and local redox-activity of molecular hybrid structures in an electrochemical environment

The self-assembly and redox-properties of two viologen derivatives, N-hexyl-N-(6-thiohexyl)-4,4-bipyridinium bromide (HS-6V6-H) and N,N-bis(6-thiohexyl)-4,4-bipyridinium bromide (HS-6V6-SH), immobilized on Au(111)-(1x1) macro-electrodes were investigated by cyclic voltammetry, surface enhanced infrared spectroscopy (SEIRAS) and in situ scanning tunneling microscopy (STM). Depending on the assembly conditions one could distinguish three different types of adlayers for both viologens: a low coverage disordered and an ordered striped phase of flat oriented molecules as well as a high coverage monolayer composed of tilted viologen moieties. Both molecules, HS-6V6-H and HS-6V6-SH, were successfully immobilized on Au(poly) nano-electrodes, which gave a well-defined redox-response in the lower pA–current range. An in situ STM configuration was employed to explore electron transport properties of single molecule junctions Au(T)|HS-6V6-SH(HS-6V6-H)|Au(S). The observed sigmoidal potential dependence, measured at variable substrate potential ES and at constant bias voltage (ET–ES), was attributed to electronic structure changes of the viologen moiety during the one-electron reduction/re-oxidation process V2+ V+. Tunneling experiments in asymmetric, STM-based junctions Au(T)-S-6V6-H|Au(S) revealed current (iT)–voltage (ET) curves with a maximum located at the equilibrium potential of the redox-process V2+ V+. The experimental iT–ET characteristics of the HS-6V6-H–modified tunneling junction were tentatively attributed to a sequential two-step electron transfer mechanism.

Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta

La presente tesis fue ideada con el objetivo principal de fabricar y caracterizar fotodiodos Schottky en capas de ZnMgO y en estructuras de pozo cuántico ZnMgO/ZnO para la detección de luz UV. La elección de este material semiconductor vino motivada por la posibilidad que ofrece de detectar y procesar señales simultáneamente, en un amplio margen de longitudes de onda, al igual que su más directo competidor el GaN. En esta memoria se da en primer lugar una visión general de las propiedades estructurales y ópticas del ZnO, prestando especial atención a su ternario ZnMgO y a las estructuras de pozo cuántico ZnMgO/ZnO. Además, se han desarrollado los conocimientos teóricos necesarios para una mejor compresión y discusión de los resultados alcanzados. En lo que respecta a los resultados de esta memoria, en esencia, estos se dividen en dos bloques. Fotodiodos desarrollados sobre capas delgadas de ZnMgO no-polar, y sobre estructuras de pozo cuántico de ZnMgO/ZnO no-polares y semipolares Fotodiodos de capas delgadas de ZnMgO. Es bien conocido que la adición de Mg a la estructura cristalina del ZnO desplaza el borde de absorción hacia energías mayores en el UV. Se ha aprovechado esto para fabricar fotodiodos Schottky sobre capas de ZnMgO crecidas por MOCVD y MBE, los cuales detecten en un ventana de energías comprendida entre 3.3 a 4.6 eV. Sobre las capas de ZnMgO, con diferentes contenidos de Mg(5.6-18.0 %), crecidas por MOCVD se han fabricado fotodiodos Schottky. Se han estudiado en detalle las curvas corrientevoltaje (I-V). Seguidamente, se ha realizado un análisis de la respuesta espectral bajo polarización inversa. Tanto los valores de responsividad obtenidos como el contraste UV/VIS están claramente aumentados por la presencia de ganancia. Paralelamente, se han realizado medidas de espectroscopia de niveles profundos (DLOS), identificándose la presencia de dos niveles profundos de carácter aceptor. El papel desempeñado por estos en la ganancia ha sido analizado meticulosamente. Se ha demostrado que cuando estos son fotoionizados son responsables directos del gran aumento de la corriente túnel que se produce a través de la barrera Schottky, dando lugar a la presencia de la ganancia observada, que además resulta ser función del flujo de fotones incidente. Para extender el rango detección hasta 4.6 eV se fabricaron fotodiodos sobre capas de ZnMgO de altísima calidad cristalina crecidas por MBE. Sobre estos se ha realizado un riguroso análisis de las curvas I-V y de las curvas capacidad-voltaje (CV), para posteriormente identificar los niveles profundos presentes en el material, mediante la técnica de DLOS. Así mismo se ha medido la respuesta espectral de los fotodetectores, la cual muestra un corte abrupto y un altísimo contraste UV/VIS. Además, se ha demostrado como estos son perfectos candidatos para la detección de luz en la región ciega al Sol. Por otra parte, se han fabricado fotodiodos MSM sobre estas mismas capas. Se han estudiado las principales figuras de mérito de estos, observándose unas corrientes bajas de oscuridad, un contraste UV/VIS de 103, y la presencia de fotocorriente persistente. Fotodiodos Schottky de pozos cuánticos de ZnO/ZnMgO. En el segundo bloque de esta memoria, con el objeto final de clarificar el impacto que tiene el tratamiento del H2O2 sobre las características optoelectrónicas de los dispositivos, se ha realizado un estudio detallado, en el que se han analizado por separado fotodiodos tratados y no tratados con H2O2, fabricados sobre pozos cuánticos de ZnMgO/ZnO. Se ha estudiado la respuesta espectral en ambos casos, observándose la presencia de ganancia en los dos. A través de un análisis meticuloso de las características electrónicas y optoeletrónicas de los fotodiodos, se han identificado dos mecanismos de ganancia internos diferentes en función de que la muestra sea tratada o no-tratada. Se han estudiado fotodetectores sensibles a la polarización de la luz (PSPDs) usando estructuras de pozo cuántico no-polares y semipolares sobre sustratos de zafiro y sustratos de ZnO. En lo que respecta a los PSPDs sobre zafiro, en los cuales el pozo presenta una tensión acumulada en el plano, se ha visto que el borde de absorción se desplaza _E _21 meV con respecto a luz linealmente polarizada perpendicular y paralela al eje-c, midiéndose un contraste (RE || c /RE c)max _ 6. Con respecto a los PSPDs crecidos sobre ZnO, los cuales tienen el pozo relajado, se ha obtenido un 4E _30-40, y 21 meV para las heteroestructuras no-polar y semipolar, respectivamente. Además el máximo contraste de responsividad fue de (RE || c /RE c)max _ 6 . Esta sensibilidad a la polarización de la luz ha sido explicada en términos de las transiciones excitónicas entre la banda de conducción y las tres bandas de valencia. ABSTRACT The main goal of the present thesis is the fabrication and characterization of Schottky photodiodes based on ZnMgO layers and ZnMgO / ZnO quantum wells (QWs) for the UV detection. The decision of choosing this semiconductor was mainly motivated by the possibility it offers of detecting and processing signals simultaneously in a wide range of wavelengths like its main competitor GaN. A general overview about the structural and optical properties of ZnO, ZnMgO layers and ZnMgO/ZnO QWs is given in the first part of this thesis. Besides, it is shown the necessary theoretical knowledge for a better understanding of the discussion presented here. The results of this thesis may be divided in two parts. On the one hand, the first part is based on studying non-polar ZnMgO photodiodes. On the other hand, the second part is focused on the characterization of non-polar and semipolar ZnMgO / ZnO QWs Schottky photodiodes. ZnMgO photodiodes. It is well known that the addition of Mg in the crystal structure of ZnO results in a strong blue-shift of the ZnO band-gap. Taking into account this fact Schottky photodiodes were fabricated on ZnMgO layers grown by MOCVD and MBE. Concerning ZnMgO layers grown by MOCVD, a series of Schottky photodiodes were fabricated, by varying the Mg content from 5.6% to 18 %. Firstly, it has been studied in detail the current-voltage curves. Subsequently, spectral response was analyzed at reverse bias voltage. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism. Simultaneously, measurements of deep level optical spectroscopy were carried out, identifying the presence of two acceptor-like deep levels. The role played for these in the gain observed was studied in detail. It has been demonstrated that when these are photoionized cause a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux. In order to extend the detection range up to 4.6 eV, photodiodes ZnMgO grown by MBE were fabricated. An exhaustive analysis of the both I-V and CV characteristics was performed. Once again, deep levels were identified by using the technique DLOS. Furthermore, the spectral response was measured, observing sharp absorption edges and high UV/VIS rejections ratio. The results obtained have confirmed these photodiodes are excellent candidates for the light detection in the solar-blind region. In addition, MSM photodiodes have also been fabricated on the same layers. The main figures of merit have been studied, showing low dark currents, a large UV/VIS rejection ratio and persistent photocurrent. ZnMgO/ZnO QWs photodiodes. The second part was focused on ZnMgO/ ZnO QWs. In order to clarify the impact of the H2O2 treatment on the performance of the Schottky diodes, a comparative study using treated and untreated ZnMgO/ZnO photodiodes has been carried out. The spectral response in both cases has shown the presence of gain, under reverse bias. Finally, by means of the analysis of electronic and optoelectronic characteristics, two different internal gain mechanisms have been indentified in treated and non-treated material. Light polarization-sensitive UV photodetectors (PSPDs) using non-polar and semipolar ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by _E _21 meV between light polarized perpendicular and parallel to the c-axis, and the maximum responsivity contrast is (RE || c /RE c)max _ 6 . For the PSPDs grown on ZnO, with strain-free quantum wells, 4E _30-40, and 21 meV for non-polar and semipolar heterostructures, and maximum (R /R||)max _10. for non-polar heterostructure was achieved. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.

Room-temperature single-electron junction.

The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized. Langmuir-Blodgett films of cadmium arachidate were transferred onto the stylus and exposed to a H2S atmosphere to yield CdS nanocrystals (30-50 angstrom in diameter) imbedded into an organic matrix. The stylus, biased with respect to a flat electrode, was brought to the tunnel distance from the film and a constant gap value was maintained by a piezo-electric actuator driven by a feedback circuit fed by the tunneling current. With this set-up, it is possible to measure the behavior of the current flowing through the quantum dot when a bias voltage is applied. Voltage-current characteristics measured in the system displayed single-electron trends such as a Coulomb blockade and Coulomb staircase and revealed capacitance values as small as 10(-19) F.

Excitation transfer spectroscopy with two metastable 138Ba+ ions in same trap.

In the absence of lasers approaching trapped ion clock transitions in sharpness we propose to replace the 12.49 m laser field exciting the D3/2-D5/2 transition of the single Ba+ ion A in D3/2 with the near-field of a close by identical ion B in the excited D5/2 state. We tune the frequency of the near-field by the differential Stark shift generated when the center of mass of the tuned ions is slightly moved out of the trap center by a small bias voltage. We demonstrate that the resultant resonant energy exchange can be made considerably faster than the natural lifetime of either metastable level and show how it might be detected.

Charge transport in a quantum electromechanical system

We describe a quantum electromechanical system comprising a single quantum dot harmonically bound between two electrodes and facilitating a tunneling current between them. An example of such a system is a fullerene molecule between two metal electrodes [Park et al., Nature 407, 57 (2000)]. The description is based on a quantum master equation for the density operator of the electronic and vibrational degrees of freedom and thus incorporates the dynamics of both diagonal (population) and off diagonal (coherence) terms. We derive coupled equations of motion for the electron occupation number of the dot and the vibrational degrees of freedom, including damping of the vibration and thermo-mechanical noise. This dynamical description is related to observable features of the system including the stationary current as a function of bias voltage

An investigation of thin amorphous carbon-based sputtered coatings for MEMS and micro-engineering applications

The work presented in this thesis describes an investigation into the production and properties of thin amorphous C films, with and without Cr doping, as a low wear / friction coating applicable to MEMS and other micro- and nano-engineering applications. Firstly, an assessment was made of the available testing techniques. Secondly, the optimised test methods were applied to a series of sputtered films of thickness 10 - 2000 nm in order to: (i) investigate the effect of thickness on the properties of coatingslcoating process (ii) investigate fundamental tribology at the nano-scale and (iii) provide a starting point for nanotribological coating optimisation at ultra low thickness. The use of XPS was investigated for the determination of Sp3/Sp2 carbon bonding. Under C 1s peak analysis, significant errors were identified and this was attributed to the absence of sufficient instrument resolution to guide the component peak structure (even with a high resolution instrument). A simple peak width analysis and correlation work with C KLL D value confirmed the errors. The use of XPS for Sp3/Sp2 was therefore limited to initial tentative estimations. Nanoindentation was shown to provide consistent hardness and reduced modulus results with depth (to < 7nm) when replicate data was suitably statistically processed. No significant pile-up or cracking of the films was identified under nanoindentation. Nanowear experimentation by multiple nanoscratching provided some useful information, however the conditions of test were very different to those expect for MEMS and micro- / nano-engineering systems. A novel 'sample oscillated nanoindentation' system was developed for testing nanowear under more relevant conditions. The films were produced in an industrial production coating line. In order to maximise the available information and to take account of uncontrolled process variation a statistical design of experiment procedure was used to investigate the effect of four key process control parameters. Cr doping was the most significant control parameter at all thicknesses tested and produced a softening effect and thus increased nanowear. Substrate bias voltage was also a significant parameter and produced hardening and a wear reducing effect at all thicknesses tested. The use of a Cr adhesion layer produced beneficial results at 150 nm thickness, but was ineffective at 50 nm. Argon flow to the coating chamber produced a complex effect. All effects reduced significantly with reducing film thickness. Classic fretting wear was produced at low amplitude under nanowear testing. Reciprocating sliding was produced at higher amplitude which generated three body abrasive wear and this was generally consistent with the Archard model. Specific wear rates were very low (typically 10-16 - 10-18 m3N-1m-1). Wear rates reduced exponentially with reduced film thickness and below (approx.) 20 nm, thickness was identified as the most important control of wear.

A study of the electrical and optical properties of unhydrogenated neon-sputtered amorphous silicon

Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

Design of a low power - high temperature heated ceramic sensor to detect halogen gases

The design, construction and optimization of a low power-high temperature heated ceramic sensor to detect leaking of halogen gases in refrigeration systems are presented. The manufacturing process was done with microelectronic assembly and the Low Temperature Cofire Ceramic (LTCC) technique. Four basic sensor materials were fabricated and tested: Li2SiO3, Na2SiO3, K2SiO3, and CaSiO 3. The evaluation of the sensor material, sensor size, operating temperature, bias voltage, electrodes size, firing temperature, gas flow, and sensor life was done. All sensors responded to the gas showing stability and reproducibility. Before exposing the sensor to the gas, the sensor was modeled like a resistor in series and the calculations obtained were in agreement with the experimental values. The sensor response to the gas was divided in surface diffusion and bulk diffusion; both were analyzed showing agreement between the calculations and the experimental values. The sensor with 51.5%CaSiO3 + 48.5%Li 2SiO3 shows the best results, including a stable current and response to the gas. ^