Mission report: a strategy to inventory, characterize, and monitor the marine region within and around the National Park and Monument boundaries of St. John, USVI, July 21- July 31, 2008

The intent of this field mission was to continue ongoing efforts: (1) to spatially characterize and monitor the distribution, abundance and size of both reef fishes and conch within and around the waters of the Virgin Islands National Park (VIIS) and newly established Virgin Islands Coral Reef National Monument (VICR), (2) to correlate this information to in-situ data collected on associated habitat parameters, (3) to use this information to establish the knowledge base necessary for enacting management decisions in a spatial setting and to establish the efficacy of those management decisions. This work is supported by the National Park Service and NOAA’s Coral Reef Conservation Program’s Caribbean Coral Reef Ecosystem Monitoring Project. The report highlights the successes of this mission.

A report on the fisheries of Uganda investigated by the Cambridge Expedition to the East African Lakes, 1930-31

There was very little previous information to use as a basis for work on Lakes Edward and George, but fortunately the region had been mapped in some detail by the Uganda-Congo Boundary Commission of 1906-08. This map served as a satisfactory foundation, but the western Congo shoreline of Lake Edward was inserted only by a dotted line, and a number of inaccuracies, particularly with regard to the islands and littoral of L. George, came to light during our survey.

绵羊、山羊和岩羊mtDNA的RFLP及其遗传分化研究

用15种识别6碱基的限制性内切酶ApaⅠ、BamHⅠ、BglⅠ、BglⅡ、ClaⅠ、DraⅠ、EcoRⅠ、EcoRⅤ、HaeⅡ、HindⅢ、KpnⅠ、PvuⅡ、PstⅠ、SacⅠ和SalⅠ对绵羊、山羊和岩羊mtDNA的限制性片断长度多态性进行了比较研究,以探讨其遗传分化关系。

滇池太湖新银鱼的生长特性与资源量关系的研究

经31个月的连续采样调查,应用Von Bertalanffy生长方程,得到太湖新银鱼1989年和1990年生长方程。据此拟合出体重与种群密度关系W=1.047-0.671 1gC,种群密度与资源量关系F=1999.36C e~(-0.2045C),最终演译出资源量平衡点在1847t。相应体重1.0g/尾;密度指标1.175尾/m~(3);捕捞时间在8月。

Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

Zn1-xMgxS-based Schottky barrier ultraviolet (UV) photodetectors were fabricated using the molecular-beam-epitaxy (MBE) technique. The influence of Mg content on MBE-grown Zn1-xMgxS-based UV photodetectors has been investigated in details with a variety of experimental techniques, including photoresponse (PR), capacitance-voltage, deep level transient Fourier spectroscopy (DLTFS) and photoluminescence (PL). The room-temperature PR results show that the abrupt long-wavelength cutoffs covering 325, 305 295. and 270 nm with Mg contents of 16%, 44%, 57%, and 75% in the Zn1-xMgxS active layers, respectively, were achieved. But the responsivity and the external quantum efficiency exhibited a slight decrease with the Mg content increasing. In good agreement with the PR results, both of the integrated intensity of the PL spectra obtained from Zn1-xMgxS thin films with different Mg compositions (x = 31% and 52%, respectively) and the DLTFS spectra obtained from Zn1-xMgxS-based (x = 5% and 45%, respectively) UV photodetector samples clearly revealed a significant concentration increase of the non-radiative deep traps with increasing Mg containing in the ZnMgS active layers. Our experimental results also indicate that the MBE-grown ZnMgS-based photodetectors can offer the promising characteristics for the detection of short-wavelength UV radiation. (C) 2004 Elsevier B.V. All rights reserved.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.