843 resultados para 1536
Resumo:
We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.
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A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.
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A catalyst-free synthesis of ZnO nanostructures using platinum microheaters under ambient environmental conditions has been developed. Different types of ZnO nanostructures are synthesized from the oxidization of Zn thin film by local heating. The characterization of two shapes of Pt microheaters is investigated and the relationship between the applied power for heat generation and ZnO nanostructure synthesis is investigated by local heating experiments under ambient conditions. Based on the developed heating approach, synthesis area, location, and morphologies of ZnO nanostructures can be controlled through the deposited thickness of Zn layer and applied heating voltages. Furthermore, a connected multiple-structure (Zn-ZnO-Zn) layer is synthesized using combinative multimicroheaters. © 2002-2012 IEEE.
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似鮈(Pseudogobiovaillanti)是广布于中国淡水水体中的一种小型鲤科鱼类.通过分析线粒体细胞色素b(cytb)基因序列变异,探讨似鮈不同地理种群的相互关系,研究似鮈的生物地理学过程,并讨论其物种分化的现状.收集了来自辽河、长江(赣江、信江等)、富春江、珠江、万泉河等水系的样品.在获得的似鮈61个样本的线粒体cytb基因全序列(1140bp)中,共检测出了45个单倍型.线粒体单倍型的网络分析发现45个单倍型不形成一个网络图,而是分成9个单元群.邻接树的结果显示,这些单倍型形成5个大的分支,基
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Centrifuge coating was implemented to fabricate nanostructured conductive layers through solution processing at room temperature. This coating procedure allows fast evaporation, thereby fixing the nanomaterials in their dispersed state onto a substrate by the centrifuge action. Material wastes were minimized by mitigating the effects of particle reaggregation. Using this method, we fabricate single-wall nanotube coatings on different substrates such as polyethylene terephthalate, polydimethylsiloxane, and an acrylic elastomer with no prior surface modification of the substrate. The effects of the choice of solvents on the morphology and subsequent performance of the coating network are studied. © 2002-2012 IEEE.
Resumo:
Upregulated gene 19 (U19)/ELL-associated factor 2 (Eaf2) is a potential human tumor suppressor that exhibits frequent allelic loss and downregulation in high-grade prostate cancer. U19/Eaf2, along with its homolog Eaf1, has been reported to regulate transcriptional elongation via interaction with the eleven-nineteen lysine-rich leukemia (ELL) family of proteins. To further explore the tumor-suppressive effects of U19/Eaf2, we constructed and characterized a murine U19/Eaf2-knockout model. Homozygous or heterozygous deletion of U19/Eaf2 resulted in high rates of lung adenocarcinoma, B-cell lymphoma, hepato cellular carcinoma and prostate intraepithelial neoplasia. Within the mouse prostate, U19/Eaf2 defficiency enhanced cell proliferation and increased epithelial cell size. The knockout mice also exhibited cardiac cell hypertrophy. These data indicate a role for U19/Eaf2 in growth suppression and cell size control as well as argue for U19/Eaf2 as a novel tumor suppressor in multiple mouse tissues. The U19/Eaf2 knockout mouse also provides a unique animal model for three important cancers: lung adenocarcinoma, B-cell lymphoma and hepatocellular carcinoma.
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Herein we report on the transport characteristics of rapid pulsed vacuum-arc thermally annealed, individual and network multi-walled carbon nanotubes. Substantially reduced defect densities (by at least an order of magnitude), measured by micro-Raman spectroscopy, and were achieved by partial reconstruction of the bamboo-type defects during thermal pulsing compared with more traditional single-pulse thermal annealing. Rapid pulsed annealed processed networks and individual multi-walled nanotubes showed a consistent increase in conductivity (of over a factor of five at room temperature), attributed to the reduced number density of resistive axial interfaces and, in the case of network samples, the possible formation of structural bonds between crossed nanotubes. Compared to the highly defective as-grown nanotubes, the pulsed annealed samples exhibited reduced temperature sensitivity in their transport characteristics signifying the dominance of scattering events from structural defects. Transport measurements in the annealed multi-walled nanotubes deviated from linear Ohmic, typically metallic, behavior to an increasingly semiconducting-like behavior attributed to thermally induced axial strains. Rapid pulsed annealed networks had an estimated band gap of 11.26 meV (as-grown; 6.17 meV), and this observed band gap enhancement was inherently more pronounced for individual nanotubes compared with the networks most likely attributed to mechanical pinning effect of the probing electrodes which possibly amplifies the strain induced band gap. In all instances the estimated room temperature band gaps increased by a factor of two. The gating performance of back-gated thin-film transistor structures verified that the observed weak semiconductivity (p-type) inferred from the transport characteristic at room temperature. © 2014 Copyright Taylor & Francis Group, LLC.
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Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.
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We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the free-electron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.
Resumo:
制备了掺Er¨ 和Er¨/Yb¨共掺的可用于EDWA(掺铒波导放大器)的Na20.B,0 .SiO, 玻璃.吸收光谱特性表明:不同掺杂Er20 浓度基础玻璃峰位置基本相同,但玻璃在相同波长处的 吸收率随着Er203浓度的增加而增大;光敏剂Yb 0 的加入明显增大了样品在978 nm处的吸收面 积;荧光光谱特性表明:随着Er O 浓度的增加玻璃在1536 nm处的荧光半高宽(FWHM)由80 nm 减小到40 nm,从而确定本体系的Er20 掺杂浓度为0.2 mo1% 左右较好.
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采用传统的高温熔融工艺制备了铒镱共掺铅硅酸盐玻璃. 测量了样品的吸收光谱、荧光光谱和折射率, 利用McCumber 理论和Judd-Ofelt 理论计算了该玻璃系统中Er3+离子4I13/2→4I15/2 能级跃迁受激发射截面和荧 光寿命.该玻璃在1 536 nm 处受激发射截面σemi 为8.62×10-21 cm2;荧光寿命长达11.32 ms(实验测量值为9.26 ms);在1536 nm 附近有很强的荧光发射,荧光有效线宽为46.5 nm;样品存在中心波长为580 nm 的4S3/2→4I15/2 跃迁的上转换荧光. 结果表明,该样品荧光寿命长,受激发射截面大,同时具有较弱的上转换发光等特性, 是制作高能脉冲光纤激光器的理想材料