Mode-localized displacement sensing

We report the construction of a new class of micromachined displacement sensors that employ the phenomenon of vibration-mode localization for monitoring minute inertial displacements. It is demonstrated both theoretically and experimentally that the eigenstate-shifted output signal of such mode-localized displacement sensors may be as high as 1000 times greater than corresponding resonant-frequency variations that serve as the output in the more traditional vibratory resonant micromechanical displacement/motion sensors. The high parametric sensitivities attainable in such mode-localized displacement sensors, together with their inherent advantages of improved environmental robustness and electrical tunability, suggest an alternative approach in achieving improved sensitivity and stability in high-resolution displacement transduction. © 1992-2012 IEEE.

Characterization and fabrication of zinc oxide nanowire devices

In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing. © 2013 IEEE.

Microsized piston-cylinder pneumatic and hydraulic actuators fabricated by lithography

Future microrobotic applications require actuators that can generate a high actuation force in a limited volume. Up to now, little research has been performed on the development of pneumatic or hydraulic microactuators, although they offer great prospects in achieving high force densities. In addition, large actuation strokes and high actuation speeds can be achieved by these actuators. This paper describes a fabrication process for piston-cylinder pneumatic and hydraulic actuators based on etching techniques, UV-definable polymers, and low-temperature bonding. Prototype actuators with a piston area of 0.15 mm2 have been fabricated in order to validate the production process. These actuators achieve actuation forces of more than 0.1 N and strokes of 750 μm using pressurized air or water as driving fluid. © 2009 IEEE.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOI acting as an etching stop, silicon based micro neural probe can be fabricated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOI substrate. The thickness of the probe is 15 mu m. The shaft of the probe has dimensions of 3 mmx100 mu mx15 mu m with typical area of the record site of 78.5 mu m(2). The impedance of the record site was measured in-vitro. The typical impedance characteristics of the record sites are around 2 M Omega at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

A novel implantable multichannel silicon-based microelectrode

Silicon-based microelectrodes have been confirmed to be helpful in neural prostheses. The fabricated 7-channel silicon-based microelectrode was feasible to be implanted into the brain cortex. The manufacturing process by microelectromechanical system (MEMS) technology was detailed with four photolithographic masks. The microscopic photographs and SEM images indicated that the probe shank was 3mm long, 100 mu m wide and 20 mu m thick with the recording sites spaced 120 mu m apart for good signal isolation. To facilitate the insertion and minimize the trauma, the microelectrode is narrowed down gradually near the tip with the tip taper angle of 6 degrees. Curve of the single recording site impedance versus frequency was shown by test in vitro and the impedance declined from 150.5 k Omega to 6.0 k Omega with frequency changing from 10 k to 10MHz.

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots.

Fatigue behavior of laser-welded NiTi wires in small-strain cyclic bending

NiTi wires and their weldments are commonly used in micro-electro-mechanical systems (MEMS), and in such applications, cyclic loading are commonly encountered. In this paper, the bending-rotation fatigue (BRF) test was used to study the bending fatigue behavior of NiTi wire laser weldment in the small-strain regime. The fracture mechanism, which includes crack initiation, crack growth and propagation of the weldment in the BRF test, was investigated with the aid of SEM fractography and discussed in terms of the microstructure. It was found that crack initiation was primarily surface-condition dependent. The cracks were found to initiate at the surface defects at the weld zone (WZ) surface, and the crack propagation was assisted by the gas inclusions in the WZ. The weldment was finally fractured in a ductile manner. The fatigue life was found to decrease with increasing surface strain and also with increasing bending frequency (controlled by the rotational speed in the BRF test). In comparison, the fatigue life of the unwelded NiTi wires was higher than their welded counterparts at all strain levels and bending frequencies. The decrease in fatigue resistance of the weldment could be attributed to the surface and microstructural defects introduced during laser welding.

1-D constitutive model for evolution of stress-induced R-phase and localized Lüders-like stress-induced martensitic transformation of super-elastic NiTi wires

NiTi alloys have been widely used in the applications for micro-electro-mechanical-systems (MEMS), which often involve some precise and complex motion control. However, when using the NiTi alloys in MEMS application, the main problem to be considered is the degradation of functional property during cycling loading. This also stresses the importance of accurate prediction of the functional behavior of NiTi alloys. In the last two decades, a large number of constitutive models have been proposed to achieve the task. A portion of them focused on the deformation behavior of NiTi alloys under cyclic loading, which is a practical and non-negligible situation. Despite of the scale of modeling studies of the field in NiTi alloys, two experimental observations under uniaxial tension loading have not received proper attentions. First, a deviation from linearity well before the stress-induced martensitic transformation (SIMT) has not been modeled. Recent experiments confirmed that it is caused by the formation of stress-induced R phase. Second, the influence of the well-known localized Lüders-like SIMT on the macroscopic behavior of NiTi alloys, in particular the residual strain during cyclic loading, has not been addressed. In response, we develop a 1-D phenomenological constitutive model for NiTi alloys with two novel features: the formation of stress-induced R phase and the explicit modeling of the localized Lüders-like SIMT. The derived constitutive relations are simple and at the same time sufficient to describe the behavior of NiTi alloys. The accumulation of residual strain caused by R phase under different loading schemes is accurately described by the proposed model. Also, the residual strain caused by irreversible SIMT at different maximum loading strain under cyclic tension loading in individual samples can be explained by and fitted into a single equation in the proposed model. These results show that the proposed model successfully captures the behavior of R phase and the essence of localized SIMT.

Investigation of Finish-cut of Microelectrodischarge Milling for Nano Surface Finish

In this article, the machining conditions to achieve nanometric surface roughness in finish cut microelectrodischarge milling were investigated. For a constant gap voltage, the effect of feed rate and capacitance was studied on average surface roughness (Ra) and maximum peak-to-valley roughness height (Ry). Statistical models were developed using a three-level, two-factor experimental design. The developed models minimized Ra and Ry by desirability function approach. Maximum desirability was found to be more than 98%. The minimum values of Ra and Ry were 23 and 173 nm, respectively, for 1.00 μm s-1 feed rate and 0.01 nF capacitance. Verification experiments were conducted to check the accuracy of the models, where the responses were found to be very close to the predicted values. Thus, the developed models can be used to generate nanometric level surface finish, which are useful for many applications in microelectromechanical systems.

Air-gap based vertical cavity micro-opto-electro-mechanical Fabry-Perot filters

Mikrooptische Filter sind heutzutage in vielen Bereichen in der Telekommunikation unersetzlich. Wichtige Einsatzgebiete sind aber auch spektroskopische Systeme in der Medizin-, Prozess- und Umwelttechnik. Diese Arbeit befasst sich mit der Technologieentwicklung und Herstellung von luftspaltbasierenden, vertikal auf einem Substrat angeordneten, oberflächenmikromechanisch hergestellten Fabry-Perot-Filtern. Es werden zwei verschiedene Filtervarianten, basierend auf zwei verschiedenen Materialsystemen, ausführlich untersucht. Zum einen handelt es sich dabei um die Weiterentwicklung von kontinuierlich mikromechanisch durchstimmbaren InP / Luftspaltfiltern; zum anderen werden neuartige, kostengünstige Siliziumnitrid / Luftspaltfilter wissenschaftlich behandelt. Der Inhalt der Arbeit ist so gegliedert, dass nach einer Einleitung mit Vergleichen zu Arbeiten und Ergebnissen anderer Forschergruppen weltweit, zunächst einige theoretische Grundlagen zur Berechnung der spektralen Reflektivität und Transmission von beliebigen optischen Schichtanordnungen aufgezeigt werden. Auß erdem wird ein kurzer theoretischer Ü berblick zu wichtigen Eigenschaften von Fabry-Perot-Filtern sowie der Möglichkeit einer mikromechanischen Durchstimmbarkeit gegeben. Daran anschließ end folgt ein Kapitel, welches sich den grundlegenden technologischen Aspekten der Herstellung von luftspaltbasierenden Filtern widmet. Es wird ein Zusammenhang zu wichtigen Referenzarbeiten hergestellt, auf denen diverse Weiterentwicklungen dieser Arbeit basieren. Die beiden folgenden Kapitel erläutern dann ausführlich das Design, die Herstellung und die Charakterisierung der beiden oben erwähnten Filtervarianten. Abgesehen von der vorangehenden Epitaxie von InP / GaInAs Schichten, ist die Herstellung der InP / Luftspaltfilter komplett im Institut durchgeführt worden. Die Herstellungsschritte sind ausführlich in der Arbeit erläutert, wobei ein Schwerpunktthema das trockenchemische Ä tzen von InP sowie GaInAs, welches als Opferschichtmaterial für die Herstellung der Luftspalte genutzt wurde, behandelt. Im Verlauf der wissenschaftlichen Arbeit konnten sehr wichtige technische Verbesserungen entwickelt und eingesetzt werden, welche zu einer effizienteren technologischen Herstellung der Filter führten und in der vorliegenden Niederschrift ausführlich dokumentiert sind. Die hergestellten, für einen Einsatz in der optischen Telekommunikation entworfenen, elektrostatisch aktuierbaren Filter sind aus zwei luftspaltbasierenden Braggspiegeln aufgebaut, welche wiederum jeweils 3 InP-Schichten von (je nach Design) 357nm bzw. 367nm Dicke aufweisen. Die Filter bestehen aus im definierten Abstand parallel übereinander angeordneten Membranen, die über Verbindungsbrücken unterschiedlicher Anzahl und Länge an Haltepfosten befestigt sind. Da die mit 357nm bzw. 367nm vergleichsweise sehr dünnen Schichten freitragende Konstrukte mit bis zu 140 nm Länge bilden, aber trotzdem Positionsgenauigkeiten im nm-Bereich einhalten müssen, handelt es sich hierbei um sehr anspruchsvolle mikromechanische Bauelemente. Um den Einfluss der zahlreichen geometrischen Strukturparameter studieren zu können, wurden verschiedene laterale Filterdesigns implementiert. Mit den realisierten Filter konnte ein enorm weiter spektraler Abstimmbereich erzielt werden. Je nach lateralem Design wurden internationale Bestwerte für durchstimmbare Fabry-Perot-Filter von mehr als 140nm erreicht. Die Abstimmung konnte dabei kontinuierlich mit einer angelegten Spannung von nur wenigen Volt durchgeführt werden. Im Vergleich zu früher berichteten Ergebnissen konnten damit sowohl die Wellenlängenabstimmung als auch die dafür benötigte Abstimmungsspannung signifikant verbessert werden. Durch den hohen Brechungsindexkontrast und die geringe Schichtdicke zeigen die Filter ein vorteilhaftes, extrem weites Stopband in der Größ enordnung um 550nm. Die gewählten, sehr kurzen Kavitätslängen ermöglichen einen freien Spektralbereich des Filters welcher ebenfalls in diesen Größ enordnungen liegt, so dass ein weiter spektraler Einsatzbereich ermöglicht wird. Während der Arbeit zeigte sich, dass Verspannungen in den freitragenden InPSchichten die Funktionsweise der mikrooptischen Filter stark beeinflussen bzw. behindern. Insbesondere eine Unterätzung der Haltepfosten und die daraus resultierende Verbiegung der Ecken an denen sich die Verbindungsbrücken befinden, führte zu enormen vertikalen Membranverschiebungen, welche die Filtereigenschaften verändern. Um optimale Ergebnisse zu erreichen, muss eine weitere Verbesserung der Epitaxie erfolgen. Jedoch konnten durch den zusätzlichen Einsatz einer speziellen Schutzmaske die Unterätzung der Haltepfosten und damit starke vertikale Verformungen reduziert werden. Die aus der Verspannung resultierenden Verformungen und die Reaktion einzelner freistehender InP Schichten auf eine angelegte Gleich- oder Wechselspannung wurde detailliert untersucht. Mittels Weisslichtinterferometrie wurden lateral identische Strukturen verglichen, die aus unterschiedlich dicken InP-Schichten (357nm bzw. 1065nm) bestehen. Einen weiteren Hauptteil der Arbeit stellen Siliziumnitrid / Luftspaltfilter dar, welche auf einem neuen, im Rahmen dieser Dissertation entwickelten, technologischen Ansatz basieren. Die Filter bestehen aus zwei Braggspiegeln, die jeweils aus fünf 590nm dicken, freistehenden Siliziumnitridschichten aufgebaut sind und einem Abstand von 390nm untereinander aufweisen. Die Filter wurden auf Glassubstraten hergestellt. Der Herstellungsprozess ist jedoch auch mit vielen anderen Materialien oder Prozessen kompatibel, so dass z.B. eine Integration mit anderen Bauelemente relativ leicht möglich ist. Die Prozesse dieser ebenfalls oberflächenmikromechanisch hergestellten Filter wurden konsequent auf niedrige Herstellungskosten optimiert. Als Opferschichtmaterial wurde hier amorph abgeschiedenes Silizium verwendet. Der Herstellungsprozess beinhaltet die Abscheidung verspannungsoptimierter Schichten (Silizium und Siliziumnitrid) mittels PECVD, die laterale Strukturierung per reaktiven Ionenätzen mit den Gasen SF6 / CHF3 / Ar sowie Fotolack als Maske, die nasschemische Unterätzung der Opferschichten mittels KOH und das Kritisch-Punkt-Trocken der Proben. Die Ergebnisse der optischen Charakterisierung der Filter zeigen eine hohe Ü bereinstimmung zwischen den experimentell ermittelten Daten und den korrespondierenden theoretischen Modellrechnungen. Weisslichtinterferometermessungen der freigeätzten Strukturen zeigen ebene Filterschichten und bestätigen die hohe vertikale Positioniergenauigkeit, die mit diesem technologischen Ansatz erreicht werden kann.

Seal Formation in Silicon Planar Patch-Clamp Microstructures

This paper presents a microfabricated planar patch-clamp electrode design and looks at the impact of several physical characteristics on seal formation. The device consists of a patch aperture, 1.5-2.5 mum in diameter and 7-12 mum in depth, with a reverse-side deep-etched 80-mum well. The patch aperture was coated with either thermal oxide or plasma-enhanced chemical vapor deposited (PECVD) SiO2. Some of the thermal oxide devices were converted into protruding nozzle structures, and some were boron-doped. Seal formation was tested with cultured N2a neuroblastoma cells. The PECVD oxide devices produced an average seal resistance of 34 MOmega(n = 24), and the thermal oxide devices produced an average seal resistance of 96 MOmega(n = 59). Seal resistance was found to positively correlate with patch aperture depth. Whole-cell recordings were obtained from 14% of cells tested with the thermal oxide devices, including a single recording where a gigaohm seal was obtained.

Comparison of low-power wireless communication technologies for wearable health-monitoring applications

Health monitoring technologies such as Body Area Network (BAN) systems has gathered a lot of attention during the past few years. Largely encouraged by the rapid increase in the cost of healthcare services and driven by the latest technological advances in Micro-Electro-Mechanical Systems (MEMS) and wireless communications. BAN technology comprises of a network of body worn or implanted sensors that continuously capture and measure the vital parameters such as heart rate, blood pressure, glucose levels and movement. The collected data must be transferred to a local base station in order to be further processed. Thus, wireless connectivity plays a vital role in such systems. However, wireless connectivity comes at a cost of increased power usage, mainly due to the high energy consumption during data transmission. Unfortunately, battery-operated devices are unable to operate for ultra-long duration of time and are expected to be recharged or replaced once they run out of energy. This is not a simple task especially in the case of implanted devices such as pacemakers. Therefore, prolonging the network lifetime in BAN systems is one of the greatest challenges. In order to achieve this goal, BAN systems take advantage of low-power in-body and on-body/off-body wireless communication technologies. This paper compares some of the existing and emerging low-power communication protocols that can potentially be employed to support the rapid development and deployment of BAN systems.

Nanofretting behaviors of NiTi shape memory alloy

Nanofretting refers to cyclic movements of contact interfaces with the relative displacement amplitude at the nanometer scale, where the contact area and normal load are usually much smaller than those in fretting. Nanofretting widely exists in microelctromechanical systems (MEMS) and may become a key tribological concern besides microwear and adhesion. With a triboindenter, the nanofretting behaviors of a nickel titanium (NiTi) shape memory alloy are studied under various normal loads (1–10 mN) and tangential displacement amplitudes (2–500 nm) by using a spherical diamond tip. Similar to fretting, the nanofretting of NiTi/diamond pair can also be divided into different regimes upon various shapes of tangential force–displacement curves. The dependence of nanofretting regime on the normal load and the displacement amplitude can be summarized in a running condition nanofretting map. However, due to the surface and size effects, nanofretting operates at some different conditions, such as improved mechanical properties of materials at the nanometer scale, small apparent contact area and single-asperity contact behavior. Consequently, different from fretting, nanofretting was found to exhibit several unique behaviors: (i) the maximum tangential force in one cycle is almost unchanged during a nanofretting test, which is different from a fretting test where the maximum tangential force increases rapidly in the first dozens of cycles; (ii) the tangential stiffness in nanofretting is three orders magnitude smaller than that in fretting; (iii) the friction coefficient in nanofretting is much lower than that in fretting in slip regime; (iv) no obvious damage was observed after 50 cycles of nanofretting under a normal load of 10 mN.