Mixed Wireless Communications and RFID Sensor Networks over Fibre

A second harmonic suppression scheme allowing RoF links to support communications and passive UHF RFID is reviewed. Using RoF distributed antenna system techniques, the coverage and location accuracy of passive UHF RFID are significantly improved.

A classification of data quality assessment methods

Data quality (DQ) assessment can be significantly enhanced with the use of the right DQ assessment methods, which provide automated solutions to assess DQ. The range of DQ assessment methods is very broad: from data profiling and semantic profiling to data matching and data validation. This paper gives an overview of current methods for DQ assessment and classifies the DQ assessment methods into an existing taxonomy of DQ problems. Specific examples of the placement of each DQ method in the taxonomy are provided and illustrate why the method is relevant to the particular taxonomy position. The gaps in the taxonomy, where no current DQ methods exist, show where new methods are required and can guide future research and DQ tool development.

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration

This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar). © 2012 IEEE.