Switching speed enhancement of the LDMOSFETs using partial-SOI technology

To overcome reduced breakdown voltage and self-heating effects inherent in silicon-on-insulator (SOI) power integrated circuits while still maintaining good isolation between low power CMOS circuits and the high power cells, partial SOI (PSOI) technology has been proposed. PSOI devices make use of both buried oxide and substrate depletion to support the breakdown voltage. 2D analyses and modeling of parasitic capacitances in PSOI structures show that PSOI-lightly doped MOSFETs can increase the switching speed by as much as four times compared to conventional SOI structures, making them very attractive for high switching applications.

The effect of dopants on the twist elastic constant and the rotational viscosity coefficient for nematics

The twist elastic constant, K2, and the rotational viscosity coefficient, γ1, are of importance when the response lime for the in-plane switching mode is studied. Since adding dopants is one technique to improve the response characteristics, the effect of dopants on these physical properties is significant. The effect on K2 and γ1 of adding alkyl(alkoxy) phenylcyclopentenones and alkyl(alkoxy) cyanobiphenyls to the base mixture ZLI-4792 together with their temperature dependence have been investigated using different temperature scales. The reduced temperature scale showed the effect of these dopants on K2 is small. On the other hand, the temperature dependence of γ1 depends on both the absolute temperature scale and the reduced temperature scale. Therefore, it is clear that the choice of temperature scale with which to compare γ1 for different systems raises fundamental questions which way not have a unique answer. 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Industrial practice in technology planning - Implications for a useful tool catalogue for technology management

A survey on technology planning and its implications for a useful tool catalogue for technology management was conducted. The survey provided a picture of technology planning, across a broad range of company size, manufacturing type and sector. It was concluded from the findings that technology planning is an important business activity across industry sectors and company types, driven increasing competition, market requirements and regulation technology change. The process technology roadmapping was used to support technology strategy and planning and could be useful way of structuring both the use of tools in a company and a tool catalogue.

Characterisation of technology roadmaps: Purpose and format

A report on characterisation of technology roadmaps, its purpose and formats are presented. A fast-start process is developed to support the initiation of technology roadmapping in firms to address the industrial needs. The purpose of each roadmap is related to a number of planning aims: product, capability, integration, strategic, long-range, programme and process planning. The second set of categories are related to the format of the roadmap, based on observed structure: multiple or single layers, bars, tables, graphs, pictorial forms, flow diagrams and text. It is concluded that technology roadmaps processes a great potential for supporting the development and implementation of business product and technology strategy.

Make or buy: understanding the impact of technology choices

This paper identifies the significance of make or buy issues for manufacturing industry, and positions the question as central to manufacturing strategy. The key importance of technology assessment in formulating a make or buy strategy is examined, together with some practical techniques for making this assessment. Finally the issues of managing the technology base of a business are reviewed, and current research aimed at facilitating this task is described.

The flexoelectric behaviour of a hypertwisted chiral nematic liquid crystal

The flexoelectric behaviour of a hypertwisted chiral nematic bimesogenic liquid crystal is presented. Through detailed electro-optic measurements, with particular emphasis on the switching properties, we demonstrate remarkably high optical axis tilt angles. The material studied possessed a room temperature nematic phase and aligned easily on cooling under the application of a moderate electric field. Switching times of the order of 500 μs and contrast ratios of 90:1 are readily achieved. The tilt angles, measured using the rotating analyser technique, were found to be practically temperature independent and linear with the applied field. Tilt angles of 22.5° were obtained with moderate applied fields of 9.4 V/μm whilst fields of 25 V/μm yielded tilt angles of 45°. We believe these are the highest tilt angles ever recorded for such fields. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

Enhanced flexoelectric switching behaviour in the chiral nematic phase

In order to develop materials that exhibit enhanced flexoelectric switching in the chiral nematic phase we have identified mesogenic units that display inherently strong flexoelectric coupling capabilities. Here we examine the oxycyanobiphenyl (OCB) moiety: homologues from the nOCB series exhibit significant electro-optic switching effects when doped with a highly chiral additive. Here we have examined lower dielectric anisotropy materials, since they allow the flexoelectric response to be extended to high field amplitudes. We show that dielectric coupling strength can be low in symmetric bimesogenic molecules. The flexoelectric response of such a molecular structure is tested by doping a homologue from the series CBOnOCB with a chiral additive: very significantly we find that the optic axis is rotated through 2φ=45° in <50 μs on reversing the polarity of the field (amplitude E=±6 V μm-1). Subsequently we have synthesized room temperature chiral nematic materials that exhibit 2φ≥90° at E≈10 V μm-1. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.