Effects on Dense-phase Zone Temperature of Fluidized Bed with Uneven Air Distribution

由于采用非均匀布风,内旋流流化床的移动区空气量不足,导致燃烧不充分,温度较低。当移动区未流化时,密相区内存在较明显的温度不均匀性。随着移动区流速的提高,温度差迅速减小。当移动区流速超过2.0#mu#m后,密相区温度基本均匀一致。流动区流速对密相区温度均匀有一定的影响,流速越高,温度越均匀。

Erosion-corrosion of mild steel in a temperature gradient

Thinning of heat-exchanger tubes by erosion-corrosion has been a problem in fluidized bed combustors (FBCs), particularly at lower metal temperatures where thicker, mechanically protective oxide scales are unable to form. Many laboratory-scale tests have shown a decrease in material loss at higher temperatures, in a similar manner to FBC boilers, but also show a decrease in wastage at low temperatures (e.g. 200°C) which has not been detected in boilers. It has been suggested that this difference is due to laboratory tests being carried out isothermally whereas in a FBC boiler the fluidized bed is considerably hotter than the metal heat exchanger tubing. In this laboratory study the simulation was therefore improved by internally cooling one of the two low carbon steel specimens. These were rotated in a horizontal plane within a lightly fluidized bed with relative particle velocities of 1.3-2.5 m s-1. Tests were carried out over a range of bed temperatures (200-500°C) and cooled specimen surface temperatures (115-500°C), with a maximum temperature difference between the two of 320°C. Although specimens exposed isothermally still showed maximum wastage at intermediate temperatures (about 350°C), those which were cooled showed high levels of wastage at temperatures as low as 200°C in a similar manner to FBC boilers. Cooling may modify the isothermal erosion-corrosion curve, causing it to broaden and the maximum wastage rate to shift to lower temperatures. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Laboratory-scale fluidized bed rig for high-temperature tube wastage studies

As part of a study of the wear of candidate heat exchanger tube materials for use in fluidized bed combustors, two similar laboratory-scale rigs have been built and characterized. Specimens of selected alloys are carried on counter-rotating rotors immersed in a fluidized bed, and are exposed to particle impact velocities of up to approximately 3 ms-1 at temperatures up to 1000°C. The performance of this design of apparatus has been investigated in detail. The effects of several experimental variables have been studied, including angle of particle impact, specimen speed, position of the rotor within the fluidized bed, duration of exposure, bed material particle size, degradation of the bed material, degree of fluidization of the bed, and size of specimen. In many cases the results obtained with steel specimens at elevated temperatures are similar to those observed with polymeric specimens at low temperatures.

High temperature direct double side cooled inverter module for hybrid electric vehicle application

In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.

Numerical simulation of temperature field evolution of metallic alloy surface due to pulsed laser treatment

This paper performed a numerical simulation on temperature field evolution for the surface layer of a metallic alloy subjected to pulsed Nd:YAG laser treatment. The enthalpy method was adopted to solve the moving boundary problem, I.e. Stefan problem. Computational results were obtained to show the temperature field evolution. Effects of latent heat and mushy zone width on the temperature field were investigated. The results also show very high values of temperature gradient and cooling rate, which are typical characteristics during the solidification process.