The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

Interface crack problems with strain gradient effects

In this paper, the strain gradient theory proposed by Chen and Wang (2001 a, 2002b) is used to analyze an interface crack tip field at micron scales. Numerical results show that at a distance much larger than the dislocation spacing the classical continuum plasticity is applicable; but the stress level with the strain gradient effect is significantly higher than that in classical plasticity immediately ahead of the crack tip. The singularity of stresses in the strain gradient theory is higher than that in HRR field and it slightly exceeds or equals to the square root singularity and has no relation with the material hardening exponents. Several kinds of interface crack fields are calculated and compared. The interface crack tip field between an elastic-plastic material and a rigid substrate is different from that between two elastic-plastic solids. This study provides explanations for the crack growth in materials by decohesion at the atomic scale.

Asymptotic analysis for a crack on interface of damaged materials

An asymptotic analysis for a crack lying on the interface of a damaged plastic material and a linear elastic material is presented in this paper. The present results show that the stress distributions along the crack tip are quite similar to those with HRR singularity field and the crack faces open obviously. Material constants n, mu and mo are varied to examine their effects on the resulting stress distributions and displacement distributions in the damaged plastic region. It is found that the stress components sigma(rr), sigma(theta theta), sigma(r theta) and sigma(e) are slightly affected by the changes of material constants n, mu and m(0), but the damaged plastic region are greatly disturbed by these material parameters.

An overview of air-sea interface process studies

Recent progress in the study of air-sea interface processes for momentum, heat, moisture and mass transfer are reviewed in the present article. Except for turbulent structure, we have analysed the other physical mechanisms occurring in the wave boundary layer, such as the roles of the sea surface state, droplets and bubbles due to wave breaking, which at least partly account for the existing discrepancies between theory and observations. The experiments, both over the ocean and in the laboratory, are described briefly. In conclusion, a few perspective trends in this area are suggested for further investigation.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.