Ionic liquids Supported Growth of Highly Ordered Microdroplets Induced by Fluidic Leakage at Poly(dimethylsiloxane) Interfaces

"Fluidic leakage" caused by vacuum force at the reversible sealing poly(dimethylsiloxane) (PDMS) interfaces was converted to one useable avenue, which led to formation of highly ordered surfactant microdroplets functionalized with ionic liquids (ILs). Vacuum force is the prerequisite to lead constant microsolutions to diffuse to the PDMS interfaces. Imidazolium ions of ILs rendered structural rearrangement of the surfactant aggregates and the ordered droplets formation.

Synthesis and characterization of color-stable electroluminescent polymers: Poly(dinaphtho [1,2-a : 1 ',2 '-g]-s-indacene)s

Two new stepladder conjugated polymers, that is, poly(7,7,15,15-tetraoctyldinaphtho[1,2-a:1',2'-g]-s-indacene) (PONSI) and poly(7,7,15,15-tetra(4-octylphenyl)dinaphtho[1,2-a:1',2'-g]-s-indacene) (PANSI) with alkyl and aryl substituents, respectively, have been synthesized and characterized. In comparison with poly(indenofluorene)s, both polymers have extended conjugation at the direction perpendicular to the polymer backbone because of the introduction of naphthalene moieties. The emission color of the polymers in film state is strongly dependent on the substituents. While PONSI emits at a maximum of 463 nm, PANSI with the same backbone but aryl substituents displays dramatically redshifted emission with a maximum at 494 nm.

Effect of interfacial roughness on dewetting behavior of polystyrene/poly(methyl methacrylate) bilayer film

The dewetting behavior of polystyrene (PS) film on poly(methyl methacrylate) (PMMA) sublayer was investigated by changing the short-range roughness of the PMMA sublayer systemically. When the bilayer film was heated to the temperature above both Tgs, the protuberances formed in both layers to reduce the system energy. By tracing the dewetting process of the PS up-layer, the dewetting velocity was found to increase with the roughness of the sublayer.

Morphology and crystalline transition of poly (3-butylthiophene) associated with its polymorphic modifications

Poly (3-butylthiophene) (P3BT) is a much less studied conjugated polymer despite its high crystallizability and thus excellent electrical property. In this work, morphology of P3BT at different crystalline polymorphs and solvent/thermal induced phase transition between form I and U modifications have been intensively investigated by using optical microscopy, electron microscopy, differential scanning calorimetry, and X-ray diffraction. It is shown that a direct deposition from carbon disulfide (CS2) at fast evaporation results in P3BT crystals in form I modification, giving typical whiskerlike morphology. In contrast, low evaporation rate from CS, leads to formation of form II crystals with spherulitic morphology, which is so far scarcely observed in polythiophene.

Metallic Cation Induced One-Dimensional Assembly of Poly(acrylic acid)-1-Dodecanethiol-Stabilized Gold Nanoparticles

In this work, we report a simple approach for controllable synthesis of one-dimensional (ID) gold nanoparticle (AuNP) assemblies in solution. In the presence of divalent metallic ions, poly(acrylic acid)-1-dodecanethiol-stabilized AuNPs (PAA-DDT@AuNPs) are found to form I D assemblies in aqueous solution by an ion-templated chelation process; this causes an easily measurable change in the absorption spectrum of the particles. The assemblies are very stable and remain suspended in solution for more than one month without significant aggregation.

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al.