SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential

15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices. Today, the SuperJunction MOSFET technologies have reached a mature stage characterized by gradual performance improvements. SuperJunction Insulated Gate Bipolar Transistors (SJ IGBTs) could interrupt this stagnation holding promise to revitalize voltage classes from 600 up to 1200 V. Such SJ IGBTs surpass by a very significant margin their SJ MOSFET counterparts both in terms of power handling capability, on-state and turn-off losses, all at the same time. On the higher end of the voltage class, SJ IGBTs would top the performance of 1.2 kV IGBTs by a similar margin. © 2012 IEEE.

Gaussian Approximation Potential: an interatomic potential derived from first principles Quantum Mechanics

Simulation of materials at the atomistic level is an important tool in studying microscopic structure and processes. The atomic interactions necessary for the simulation are correctly described by Quantum Mechanics. However, the computational resources required to solve the quantum mechanical equations limits the use of Quantum Mechanics at most to a few hundreds of atoms and only to a small fraction of the available configurational space. This thesis presents the results of my research on the development of a new interatomic potential generation scheme, which we refer to as Gaussian Approximation Potentials. In our framework, the quantum mechanical potential energy surface is interpolated between a set of predetermined values at different points in atomic configurational space by a non-linear, non-parametric regression method, the Gaussian Process. To perform the fitting, we represent the atomic environments by the bispectrum, which is invariant to permutations of the atoms in the neighbourhood and to global rotations. The result is a general scheme, that allows one to generate interatomic potentials based on arbitrary quantum mechanical data. We built a series of Gaussian Approximation Potentials using data obtained from Density Functional Theory and tested the capabilities of the method. We showed that our models reproduce the quantum mechanical potential energy surface remarkably well for the group IV semiconductors, iron and gallium nitride. Our potentials, while maintaining quantum mechanical accuracy, are several orders of magnitude faster than Quantum Mechanical methods.

The potential use of 241Am as proliferation resistant burnable poison in PWRs

This paper discusses the use of 241Am as proliferation resistant burnable poison for light water reactors. Homogeneous addition of small (as little as 0.12%) amounts of 241Am to the conventional light water reactor fuel results in significant increase in 238Pu/Pu ratio in the discharged fuel improving its proliferation resistance. Moreover, 241Am, admixed to the fuel, acts as burnable absorber allowing for substantial reduction in conventional reactivity control means without a notable fuel cycle length penalty. This is possible due to favorable characteristics of 241Am transmutation chain. The fuel cycle length penalty of introducing 241Am into the core is evaluated and discussed, as well as the impact of He production in the fuel pins and degradation of reactivity feedback coefficients. Proliferation resistance and reactivity control features related to the use of 241Am are compared to those of using 237Np, which has also been suggested as an additive to the conventional fuel in order to improve its proliferation resistance. It was found that 241Am admixture is more favorable than 237Np admixture because of the smaller fuel cycle length penalty and higher burnable poison savings. Addition of either 237Np or 241Am would provide substantial but not ultimate protection from misuse of Pu originating in the spent fuel from the commercial power reactors. Therefore, the benefits from application of the concept would have to be carefully evaluated against the additional costs and proliferation risks associated with manufacturing of 237Np or 241Am doped fuel. Although this work concerns specifically with PWRs, the conclusions could also be applied to BWRs and, to some extent, to other thermal spectrum reactor types. © 2009 Elsevier Ltd. All rights reserved.

The potential use of 241Am as proliferation resistant burnable poison

This paper discusses the use of 141Am as proliferation resistant burnable poison for light water reactors. Homogeneous addition of small (less than 1 %) amounts of 241Am to the conventional LWR fuel results in significant increase in 238Pu/Pu ratio in the discharged fuel improving its proliferation resistance. Moreover, 241Am, admixed to the fuel, acts as burnable absorber allowing for substantial reduction in conventional reactivity control means without notable fuel cycle length penalty. This is possible due to favourable characteristics of 241Am transmutation chain. The fuel cycle length penalty of introducing 241Am into the core is evaluated and discussed, as well as the impact of He production in the fuel pins and degradation of reactivity feedback coefficients. Proliferation resistance and reactivity control features related to the use of 241Am are compared to those of using 237Np, which has also been suggested as an additive to the conventional fuel in order to improve its proliferation resistance. It was found that 241Am admixture is more favourable than 237Np admixture because of the smaller fuel cycle length penalty and higher burnable poison savings.

A global assessment of manufacturing: Economic development, energy use, carbon emissions, and the potential for energy efficiency and materials recycling

We present in two parts an assessment of global manufacturing. In the first part, we review economic development, pollution, and carbon emissions from a country perspective, tracking the rise of China and other developing countries. The results show not only a rise in the economic fortunes of the newly industrializing nations, but also a significant rise in global pollution, particularly air pollution and CO2 emissions largely from coal use, which alter and even reverse previous global trends. In the second part, we change perspective and quantitatively evaluate two important technical strategies to reduce pollution and carbon emissions: energy efficiency and materials recycling. We subdivide the manufacturing sector on the basis of the five major subsectors that dominate energy use and carbon emissions: (a) iron and steel, (b) cement, (c) plastics, (d) paper, and (e) aluminum. The analysis identifies technical constraints on these strategies, but by combined and aggressive action, industry should be able to balance increases in demand with these technical improvements. The result would be high but relatively flat energy use and carbon emissions. The review closes by demonstrating the consequences of extrapolating trends in production and carbon emissions and suggesting two options for further environmental improvements, materials efficiency, and demand reduction. © 2013 by Annual Reviews. All rights reserved.

Electrical/optical dual-function redox potential transistor

We demonstrate a new type of transistors, the electrical/optical "dual-function redox-potential transistors", which is solution processable and environmentally stable. This device consists of vertically staked electrodes that act as gate, emitter and collector. It can perform as a normal transistor, whilst one electrode which is sensitised by dye enables to generate photocurrent when illuminated. Solution processable oxide-nanoparticles were used to form various functional layers, which allow an electrolyte to penetrate through and, consequently, the current between emitter and collector can be controlled by the gate potential modulated distribution of ions. The result here shows that the device performs with high ON-current under low driving voltage (<1â€...V), while the transistor performance can readily be controlled by photo-illumination. Such device with combined optical and electrical functionalities allows single device to perform the tasks that are usually done by a circuit/system with multiple optical and electrical components, and it is promising for various applications.