Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.

Mass chains with passive interconnection: Complex iterative maps and scalability

This paper introduces the problem of passive control of a chain of N identical masses in which there is an identical passive connection between neighbouring masses and a similar connection to a movable point. The problem arises in the design of multi-storey buildings which are subjected to earthquake disturbances, but applies in other situations, for example vehicle platoons. The paper will study the scalar transfer functions from the disturbance to a given intermass displacement. It will be shown that these transfer functions can be conveniently represented in the form of complex iterative maps and that these maps provide a method to establish boundedness in N of the H ∞-norm of these transfer functions for certain choices of interconnection impedance. © 2013 IEEE.