Selective growth of single phase VO2(A, B, and M) polymorph thin films

We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photoelectron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero) structures promising new device functionalities. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Effects of temperature and clay content on water absorption characteristics of modified MMT clay/cyclic olefin copolymer nanocomposite films: Permeability, dynamic mechanical properties and the encapsulated organic device performance

In the present study, amino-silane modified layered organosilicates were used to reinforce cyclic olefin copolymer to enhance the thermal, mechanical and moisture impermeable barrier properties. The optimum clay loading (4%) in the nanocomposite increases the thermal stability of the film while further loading decreases film stability. Water absorption behavior at 62 degrees C was carried out and compared with the behavior at room temperature and 48 degrees C. The stiffness of the matrix increases with clay content and the recorded strain to failure for the composite films was lower than the neat film. Dynamic mechanical analysis show higher storage modulus and low loss modulus for 2.5-4 wt% clay loading. Calcium degradation test and device encapsulation also show the evidence of optimum clay loading of 4 wt% for improved low water vapor transmission rates compared to other nanocomposite films. (C) 2014 Elsevier Ltd. All rights reserved.

Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photooxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

Transport studies on La0.8-xPr0.2SrxMnO3 manganite films

In this communication, we report the results of the studies on structural, microstructural, transport and magnetotransport behavior of L0.8-xPr0.2SrxMnO3 (LPSMO) (x=0.1, 0.2 and 0.3) manganite films grown on (100) single crystalline SrTiO3 (STO) substrate using low cost chemical solution deposition (CSD) method. Films with similar compositions were also grown using sophisticated pulsed laser deposition (PLD) technique and results of structural and transport studies obtained for CSD grown films were compared with PLD grown films. Structural studies show that all the CSD and PLD grown films possess single crystalline nature with compressive and tensile strain, respectively. Surface morphology, studied using atomic force microscope (AFM), reveals the island like grain morphology in CSD grown films while PLD grown films possess smooth film surfaces. Carrier density dependent transport properties of the films have been discussed in the context of zener double exchange (ZDE) mechanism. Lower resistivity and higher transition temperature (T-p) observed in CSD grown films as compared to PLD grown films have been discussed in the light of structural strain and surface morphology of the films. Various models and mechanisms have been employed to understand the charge transport in CSD and PLD grown films. Also, observation of low temperature resistivity minima behavior in all the CSD and PLD grown LPSMO films has been explained in the context of electron-electron scattering mechanism. (C) 2015 Elsevier B.V. All rights reserved.

Inductively coupled reactive ion etching studies on sputtered yttria stabilized zirconia thin films in SF6, Cl-2, and BCl3 chemistries

Downscaling of yttria stabilized zirconia (YSZ) based electrochemical devices and gate oxide layers requires successful pattern transfer on YSZ thin films. Among a number of techniques available to transfer patterns to a material, reactive ion etching has the capability to offer high resolution, easily controllable, tunable anisotropic/isotropic pattern transfer for batch processing. This work reports inductively coupled reactive ion etching studies on sputtered YSZ thin films in fluorine and chlorine based plasmas and their etch chemistry analyses using x-ray photoelectron spectroscopy. Etching in SF6 plasma gives an etch rate of 7 nm/min chiefly through physical etching process. For same process parameters, in Cl-2 and BCl3 plasmas, YSZ etch rate is 17 nm/min and 45 nm/min, respectively. Increased etch rate in BCl3 plasma is attributed to its oxygen scavenging property synergetic with other chemical and physical etch pathways. BCl3 etched YSZ films show residue-free and smooth surface. The surface atomic concentration ratio of Zr/Y in BCl3 etched films is closer to as-annealed YSZ thin films. On the other hand, Cl-2 etched films show surface yttrium enrichment. Selectivity ratio of YSZ over silicon (Si), silicon dioxide (SiO2) and silicon nitride (Si3N4) are 1:2.7, 1:1, and 1:0.75, respectively, in BCl3 plasma. YSZ etch rate increases to 53 nm/min when nonoxygen supplying carrier wafer like Si3N4 is used. (C) 2015 American Vacuum Society.

Influence of substrate temperature on structure, microstructure and magnetic properties of sputtered Fe-Ga thin films

This paper reports the structure, microstructure and magnetic properties of Fe-Ga thin films deposited using DC magnetron sputtering technique on Si(100) substrate kept at different temperatures. Structural studies employing X-ray diffraction and TEM revealed the presence of only disordered A2 phase in the film. Columnar growth of nanocrystalline grains from the substrate was observed in the film deposited at room temperature. With increase in substrate temperature the grain size as well as surface roughness was found to increase. The magnetization of the films deposited at higher substrate temperatures were Found to saturate at lower magnetic held as compared to the room temperature deposited Film. Coercivity was found to decrease with increasing substrate temperature upto a minimum value of similar to 2 Oe for the film deposited at 450 degrees C and with further increase in substrate temperature it was found to increase. A maximum magnetostriction of 200 mu-strains was also observed for the film deposited at 450 degrees C. (C) 2015 Elsevier B.V. All rights reserved