Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

　

Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type GaAs layer

By integrating a three-barrier, two-well resonant tunneling structure with a 1.2-mu m-thick, slightly doped n-GaAs layer, a photoinduced voltage shift on the order of magnitude of 100 mV in resonant current peaks has been verified at an irradiance of low light power density. The 1.2-mu m-thick, slightly doped n-GaAs layer manifests itself of playing an important role in enhancing photoelectric sensitivity. (c) 2005 Elsevier B.V. All rights reserved.

Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing

A ridge laser diode monolithically integrated with a buried-ridge-structure dual-waveguide spot-size converter operating at 1.58 mu m is successfully fabricated by means of low-energy ion implantation quantum well intermixing and asymmetric twin waveguide technology. The passive waveguide is optically combined with a laterally tapered active core to control the mode size. The devices emit in a single transverse and quasi single longitudinal mode with a side mode suppression ratio of 40.0dB although no grating is fabricated in the LD region. The threshold current is 50 mA. The beam divergence angles in the horizontal and vertical directions are as small as 7.3 degrees x 18.0 degrees, respectively, resulting in 3.0dB coupling loss With a cleaved single-mode optical fibre.

Integrated folding 4x4 optical matrix switch with total internal reflection mirrors on SOI by anisotropic chemical etching

A folding rearrangeable nonblocking 4 x 4 optical matrix switch was designed and fabricated on silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were interconnected by total internal reflection (TIR) mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide anisotropic chemical etching of silicon was utilized to make the matrix switch for the first time. The device has a compact size of 20 x 1.6 mm(2) and a fast response of 7.5 mu s. The power consumption of each 2 x 2 SE and the average excess loss per mirror were 145 mW and -1.1 dB, respectively. Low path dependence of +/- 0.7 dB in total excess loss was obtained because of the symmetry of propagation paths in this novel matrix switch.

Research progresses of SOI optical waveguide devices and integrated optical switch matrix

SOI (silicon-on-insulator) is a new material with a lot of important performances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2X2 thermal-optical switch were successfully designed and fabricated. Based on these, 4X4 and 8X8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

1.55 mu m spot-size converter with monolithically integrated laser diode by conventional process

A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is designed and fabricated using conventional photolithography and the chemical wet etching process. For the laser diode, a ridge double-core structure is employed. For the spot-size converter, a buried double-waveguide structure is incorporated. The laterally tapered active core is designed and optically combined with the thin passive core to control the size of the mode. The threshold current was measured to be 40 mA together with high slope efficiency of 0.35 W A(-1). The beam divergence angles in the horizontal and vertical directions were as small as 14.9degrees and 18.2degrees, respectively.

Analysis of chirp characteristics of DFB lasers and integrated laser-modulators

A new method of analyzing the chirp characteristics of directly modulated lasers and integrated laser-modulators is presented in this paper. Phase-circuit has been introduced into the circuit model of distributed feedback (DFB) lasers in the analysis. Therefore, the chirp characteristics of the device can be obtained by simulating the modified circuit model. The simulation results agree well with the published data. Furthermore, this modified model is combined with the circuit model of electroabsorption (EA) modulators to simulate the chirp characteristics of the monolithic integration of a DFB laser and an EA modulator. The simulation is focused on the dependence of the frequency chirp of the integrated device on the isolation resistance between laser and modulator. Much lower chirp can be seen in the integrated lightwave source compared to the directly modulated laser.

Ridge waveguide laser integrated with spot-size converter in a single step epitaxial for high coupling efficiency to single-mode fibres

A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxial by using the conventional photolithography and chemical wet etching process. The device was constructed by a conventional ridge waveguide active layer and a larger passive ridge-waveguide layer. The threshold current was 40 mA together with high slope efficiency of 0.24 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 12.0degrees x 15.0degrees, respectively, resulting in about 3.2-dB coupling losses with a cleaved optical fibre.