Body-centric antenna positioning effects for off-body UWB communications in a contemporary learning environment

The propagation of UWB signals for body-centric communications within a modern classroom/conference room environment was investigated. Presented results demonstrate that the body-antenna mounting position has a marked impact on the received power levels and positioning the antenna on the chest as opposed to the shoulder or wrist creates more extreme values in receive power, mean excess delay and rms delay spread. Additionally, the best fit models for each scenario are presented and highlight the difference between the chest and other compared antenna locations. The work concluded that the chest is a poor choice of mounting position for the antenna due to significant body shadowing effects, with the wrist or shoulder considered better options for UWB systems.

High-Efficiency Harmonic-Peaking Class-EF Power Amplifiers with Enhanced Maximum Operating Frequency

The recently introduced Class-EF power amplifier (PA) has a peak switch voltage lower than that of the Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. Consequently, soft-switching operation that minimizes power dissipation during off-to-on transition cannot be achieved at high frequencies. Two new Class-EF PA variants with transmission-line load networks, namely, third-harmonic-peaking (THP) and fifth-harmonic-peaking (FHP) Class-EF PAs are proposed in this paper. These permit operation at higher frequencies at no expense to other PA figures of merit. Analytical expressions are derived in order to obtain circuit component values, which satisfy the required Class-EF impedances at fundamental frequency, all even harmonics, and the first few odd harmonics as well as simultaneously providing impedance matching to a 50- Ω load. Furthermore, a novel open-circuit and shorted stub arrangement, which has substantial practical benefits, is proposed to replace the normal quarter-wave line connected at the transistor's drain. Using GaN HEMTs, two PA prototypes were built. Measured peak drain efficiency of 91% and output power of 39.5 dBm were obtained at 2.22 GHz for the THP Class-EF PA. The FHP Class-EF PA delivered output power of 41.9 dBm with 85% drain efficiency at 1.52 GHz.