Optimum Evaluation of Reactive Power Requirements in Power Distribution-Systems

This paper presents three methodologies for determining optimum locations and magnitudes of reactive power compensation in power distribution systems. Method I and Method II are suitable for complex distribution systems with a combination of both radial and ring-main feeders and having different voltage levels. Method III is suitable for low-tension single voltage level radial feeders. Method I is based on an iterative scheme with successive powerflow analyses, with formulation and solution of the optimization problem using linear programming. Method II and Method III are essentially based on the steady state performance of distribution systems. These methods are simple to implement and yield satisfactory results comparable with the results of Method I. The proposed methods have been applied to a few distribution systems, and results obtained for two typical systems are presented for illustration purposes.

Fault tolerance in multiprocessor systems

Multiprocessor systems which afford a high degree of parallelism are used in a variety of applications. The extremely stringent reliability requirement has made the provision of fault-tolerance an important aspect in the design of such systems. This paper presents a review of the various approaches towards tolerating hardware faults in multiprocessor systems. It. emphasizes the basic concepts of fault tolerant design and the various problems to be taken care of by the designer. An indepth survey of the various models, techniques and methods for fault diagnosis is given. Further, we consider the strategies for fault-tolerance in specialized multiprocessor architectures which have the ability of dynamic reconfiguration and are suited to VLSI implementation. An analysis of the state-óf-the-art is given which points out the major aspects of fault-tolerance in such architectures.

LIII absorption edge studies of mixed valent cerium intermetallics and related systems

LIII absorption edge measurements clearly delineate 3+ and 4+ states of Ce. Absorption edges of 3+ compounds show a single peak, while those of 4+ compounds show two peaks, both appearing at higher energies than the characteristic peaks of 3+ compounds. In systems where there is interconfigurational fluctuation, features due to both 3+ and 4+ states are distinctly seen.

Conductivity Scale In Disordered-Systems

A reanalysis of the correction to the Boltzmann conductivity due to maximally crossed graphs for degenerate bands explains why the conductivity scale in many-valley semiconductors is an order of magnitude higher than Mott's "minimum metallic conductivity." With the use of a reasonable assumption for the Boltzmann mean free path, the lowest-order perturbation theory is seen to give a remarkably good, semiquantitative, description of the conductivity variation in both uncompensated doped semiconductors and amorphous alloys.