Improved performance by a double-insulator layer in organic thin-flim transistors

Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/Vs and near the zero threshold voltage. The results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.