Simultaneous demultiplexing, data regeneration, and clock recovery with a single semiconductor optical amplifier-based nonlinear-optical loop mirror

We demonstrate simultaneous demultiplexing, data regeneration and clock recovery at 10Gbits/s, using a single semiconductor optical amplifier–based nonlinear-optical loop mirror in a phase-locked loop configuration.

Radiation effects in metal-oxide-semiconductor capacitors

An investigation has been undertaken into the effects of various radiations on commercially made Al-SiO2-Si Capacitors (MOSCs). Detailed studies of the electrical and physical nature of such devices have been used to characterise both virgin and irradiated devices. In particular, an investigation of the nature and causes of dielectric breakdown in MOSCs has revealed that intrinsic breakdown is a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. These findings are interpreted in terms of a modification to the model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. The results of a detailed investigation of charge trapping and interface state generation in such MOSCs due to various radiations has revealed evidence of neutron induced interface states, and of the generation of positive oxide charge in devices due to all of the radiations tested. In particular, the greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the greater the number of interface states generated. These findings are interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation.

Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS

Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this complementary analytical method is to obtain more complete experimental evidence of ion beam modification in surfaces of compound semiconductors and GeSi alloy to improve the understanding of the mechanisms responsible for these effects. Before ion bombardment the sample surfaces were analysed nondestructively by Angular Resolved XPS (ARXPS) and LEISS to get the initial distribution of surface composition. Ion bombardment experiments were carried out using 3keV argon ions with beam current of 1μA for a period of 50 minutes, compositional changes in the surfaces of compound semiconductors and GeSi alloy were monitored with normal XPS. After ion bombardment the surfaces were re-examined with ARXPS and LEISS. Both XPS and LEISS results showed clearly that ion bombardment will change the compositional distribution in the compound semiconductor and GeSi surfaces. In order to explain the observed experimental results, two major theories in this field, Sigmund linear collision cascade theory and the thermodynamic models based on bombardment induced Gibbsian surface segregation and diffusion, were investigated. Computer simulation using TRIM code was also carried out for assistance to the theoretical analysis. Combined the results obtained from XPS and LEISS analyses, ion bombardment induced compositional changes in compound semiconductor and GeSi surfaces are explained in terms of the bombardment induced Gibbsian surface segregation and diffusion.

The synthesis of a ferromagnetic polymer

The aim of this study was to prepare a ferromagnetic polymer using the design elements of molecular magnets. This involved the preparation of co-polyradicals of phenylacetylenes bearing nitronyl nitroxides and nitro/cyano groups. The magnetic properties of the materials were determined using a SQUID magnetometer. A novel rhodium catalyst, Rh(NBD)(NH3)Cl, was prepared in order to obtain good yields of polymerisation. A wide range of substituted phenylacetylenes were first homopolymerised in order to assess the efficiency of the catalyst. Yields were generally high, between 75% and 98%, and the time of polymerisation was short (one hour). SEC analysis revealed that the Mw of the polymers were in the range of 200,000 and 250,000. The discovery that phenylboronic acid acts a co-catalyst for the polymerisation served to increase the yields by 10% to 20% but the Mw of the polymers was reduced to approximately 100,000. Co-polyradicals were prepared in good to excellent yield using the new catalyst. The magnetic properties in the temperature range of 300K to 1.8K were investigated by SQUID, which revealed a spin glass system, antiferromagnets and possible dipolar magnets. Short-range ferromagnetic interactions between 300K and 100K were found in a co-polyradical containing nitronyl nitroxide and cyano substituted monomers. The magnetic properties were dependent upon both the type of monomers utilised and the ratio between them. The effects of ring substituents on the terminal alkyne have been studied by carbon-13 NMR. There was no correlation however, between the chemical shift of terminal alkyne and the polymerisability of the monomer.

Symmetric operating point for increasing the extinction ratio of semiconductor based optical loop mirrors

Terahertz optical asymmetric demultiplexors (TOADs) use a semiconductor optical amplifier in an interferometer to create an all-optical switch and have potential uses in many optical networking applications. Here we demonstrate and compare experimentally a novel and simple method of dramatically increasing the extinction ratio of the device using a symmetrical configuration as compared to a ‘traditional’ configuration. The new configuration is designed to suppress the occurrence of self-switching in the device thus allowing signal pulses to be used at higher power levels. Using the proposed configuration an increase in extinction ratio of 10 dB has been measured on the transmitted port whilst benefiting from an improved input signal power handling capability.

Optical linewidth of a passively mode-locked semiconductor laser

We measured the optical linewidths of a passively mode-locked quantum dot laser and show that, in agreement with theoretical predictions, the modal linewidth exhibits a parabolic dependence with the mode optical frequency. The minimum linewidth follows a Schawlow-Townes behavior with a rebroadening at high power. In addition, the slope of the parabola is proportional to the RF linewidth of the laser and can therefore provide a direct measurement of the timing jitter. Such a measurement could be easily applied to mode-locked semiconductor lasers with a fast repetition rate where the RF linewidth cannot be directly measured.

Comparison of frequency symmetric signal generation from a BPSK input using fiber and semiconductor-based nonlinear elements

This letter compares two nonlinear media for simultaneous carrier recovery and generation of frequency symmetric signals from a 42.7-Gb/s nonreturn-to-zero binary phase-shift-keyed input by exploiting four-wave mixing in a semiconductor optical amplifier and a highly nonlinear optical fiber for use in a phase-sensitive amplifier.

Feasibility of soliton-like DPSK transmission at 40 Gb/s with in-line semiconductor optical amplifiers

We analyze a soliton-like phase-shift keying 40-Gb/s transmission system using cascaded in-line semiconductor optical amplifiers. Numerical optimization of the proposed soliton-like regime is presented.

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 8.0 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.