Effects of Artemia enriched with unsaturated fatty acids and vitamin C on growth, survival and resistance Salmo trutta caspius larvae

This experiment was conducted to investigate the effect of using n-3 HUFA and Vitamin C enriched Artemia urmiana Nauplii Five difference treament were tested: for Caspian salmon (Salmo trutta caspius) larvae compare with artificial food in five treatment: (1) Artificial food, (2) Newly hatched Artemia (3) n-3 HUFA enriched Artemia (4) n-3 HUFA + 10% Ascorbyl Palmitate enriched Artemia (5) n-3 HUFA+20% Ascorbyl palmitate enriched Artemia during 15 days then all treatment were fed with artificial food during 20 days. In days of 15, larvae fed with newly hatched Artemia didn’t show significant difference of growth rate and survival compared to larvae fed with n-3 HUFA and Vitamn C enriched live food (p<0.05), However all treatment which fed live food have better growth rate and survival compred to larvae fed artificial food. Larvae fed with enriched Artemia with n-3 HUFA + 20% Ascorbyl palmitate has best result of temperature resistance at 26'C and 28'C. There is not significant difference between treatment (1) and (2), (3) and in this manner between (2), (3) and (4), (5) (P>0.05). In days of 35, larvae fed n-3 HUFA + 10% and 20% Ascorbyl pamlitate show better wet weight and dry weight compared to other treatment (P<0.05). Larvae fed n-3 HUFA Artemia showed significant difference compared to treatment (1) and (2), However there is not significant difference between treatment (1) and (2). Larvae fed artificial food show less and significant difference of survival compared to other treatment (P<0.05). Larvae fed artificial food show least of temperature resistance at 26'C and 28'C , However, there is not significant difference between all treatment (P<0.05).

Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.