La situación de las mujeres migradas víctimas de violencia de género. Propuestas de intervención

Este estudio surge con la intención de dar respuesta a la atención psicosocial en formato grupal de mujeres migradas que han sido víctimas de violencia de género. Dado que nos movemos en una sociedad multicultural, debemos encaminar nuestros esfuerzos hacia la integración del elemento cultural en las intervenciones. El trabajo está articulado en torno a dos grandes bloques. El primero, con tres ejes medulares, trata la situación actual de las mujeres migradas en nuestro contexto: I) los factores críticos en las mujeres migradas para superar la situación de maltrato; II) el marco legal de protección de las mujeres víctimas de malos tratos, y III) las respuestas y los retos actuales a los que nos enfrenta este fenómeno. Para elaborar el segundo bloque se ha tenido en cuenta las experiencias particulares de las mujeres extranjeras y sus contextos. A partir de entrevistas y grupos de discusión, se han ido recogiendo la voz de las mujeres migradas que han vivido situaciones de maltrato y explorado sus realidades, preocupaciones e inquietudes a fin de poder responder a sus necesidades para ayudarlas en los procesos de recuperación.

La situación de las mujeres migradas víctimas de violencia de género. Propuestas de intervención

Este estudio surge con la intención de dar respuesta a la atención psicosocial en formato grupal de mujeres migradas que han sido víctimas de violencia de género. Dado que nos movemos en una sociedad multicultural, debemos encaminar nuestros esfuerzos hacia la integración del elemento cultural en las intervenciones. El trabajo está articulado en torno a dos grandes bloques. El primero, con tres ejes medulares, trata la situación actual de las mujeres migradas en nuestro contexto: I) los factores críticos en las mujeres migradas para superar la situación de maltrato; II) el marco legal de protección de las mujeres víctimas de malos tratos, y III) las respuestas y los retos actuales a los que nos enfrenta este fenómeno. Para elaborar el segundo bloque se ha tenido en cuenta las experiencias particulares de las mujeres extranjeras y sus contextos. A partir de entrevistas y grupos de discusión, se han ido recogiendo la voz de las mujeres migradas que han vivido situaciones de maltrato y explorado sus realidades, preocupaciones e inquietudes a fin de poder responder a sus necesidades para ayudarlas en los procesos de recuperación.

VoIP: Making Secure Calls and Maintaining High Call Quality

Modern multimedia communication tools must have high security, high availability and high quality of service (QoS). Any security implementation will directly impact on QoS. This paper will investigate how end-to-end security impacts on QoS in Voice over Internet Protocol (VoIP). The QoS is measured in terms of lost packet ratio, latency and jitter using different encryption algorithms, no security and just the use of IP firewalls in Local and Wide Area Networks (LAN and WAN). The results of laboratory tests indicate that the impact on the overall performance of VoIP depends upon the bandwidth availability and encryption algorithm used. The implementation of any encryption algorithm in low bandwidth environments degrades the voice quality due to increased loss packets and packet latency, but as bandwidth increases encrypted VoIP calls provided better service compared to an unsecured environment.

Análisis de la arquitectura de webs mediante tests de estrés de navegación, de usabilidad y eye tracking

Evaluar una arquitectura de la información en un sitio web ya desplegado no resulta una tarea sencilla. La mayoría de las técnicas se centran en examinar la usabilidad del sistema que, aunque afecta a la arquitectura de la información, no es el único factor que influye en ella. La principal técnica que se utiliza es el test de estrés de navegación. Se muestra un aporte metodológico para hacer dicha técnica más informativa, llevándola más allá de la simple anotación en papel por parte del usuario de respuestas a las preguntas de navegación planteadas. Se propone la combinación de ésta con otras técnicas de evaluación de la usabilidad: la técnica de pensar en voz alta o thinking aloud y un cuestionario de usabilidad. Se ha utilizado un sistema de seguimiento de la mirada o eye tracking para complementar la información obtenida mediante las técnicas aplicadas. El enfoque metodológico planteado se ha puesto a prueba analizando una serie de sitios web de bibliotecas de universidades públicas españolas. Se muestra en los resultados la validez del enfoque empleado, así como el valor que dicho enfoque y el uso del eye tracking aportan al análisis de la arquitectura de la información respecto al test de estrés de navegación tradicional.

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed effective surface recombination velocities as low as 60 and 130 cms -1 on p- and n-type silicon, respectively. To our knowledge, these are the best results ever reported with intrinsic amorphous silicon films deposited by Catalytic CVD. The passivating properties of nanocrystalline silicon films strongly depended on the deposition conditions, especially on the filament temperature. Samples grown at lower filament temperatures (1600 °C) allowed effective surface recombination velocities of 450 and 600 cms -1 on n- and p-type silicon.

Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.