Variabilidade espacial de atributos de solos em unidades de manejo em área piloto de produção integrada de coco

O objetivo deste trabalho foi, inicialmente, acessar as variações espaciais dos solos de parcelas experimentais de produção integrada do coco por meio do mapeamento detalhado dos solos e da construção de mapas de contorno de atributos do solo. Foram feitas observações, medições e coleta de amostras em microtrincheiras e perfis de solo. O teor de argila dos solos das microtrincheiras foi avaliado a campo pela sensação ao tato. Em todas as amostras foram realizadas análises físicas e químicas. Foram determinados granulometria (perfis), Al, Ca e Mg, acidez potencial, K e Na, pH, P disponível e C orgânico. Nas amostras dos perfis, foram determinados Fe, Al, Ti, P e Si pelo ataque sulfúrico. O Fe também foi determinado na fração argila, por extração com ditionito-citrato-bicarbonato de Na. Foi realizada difração de raios X da fração argila desferrificada. A construção de semivariogramas possibilitou a classificação e a comparação dos atributos do solo por meio do grau de dependência espacial destes. A elaboração dos mapas de contorno foi realizada pelo método interpolador de krigagem. A área mapeada corresponde a um topo amplo de tabuleiros costeiros, com uma depressão fechada no seu extremo sul. Do centro da depressão para fora dela seguem, em seqüência, Cambissolo Háplico textura argilosa, Latossolo Amarelo textura média/argilosa e Latossolo Amarelo textura média. Esses Latossolos são coesos em subsuperfície. Predominam atributos com elevado grau de heterogeneidade. Os valores médios de P, K e Ca + Mg estão influenciados por correções e adubações sistemáticas realizadas na área de plantio. Todas as variáveis analisadas apresentaram dependência espacial, expressa pelos modelos de semivariogramas. A análise da relação C0/(C0 + C1) revelou um grau de dependência espacial, de todas as variáveis, de moderado a forte. Os mapas de contorno detalharam diferenças que o mapa de solos já apontava para vários atributos, influenciados pela presença da depressão no extremo sul da área. Foram estabelecidas duas unidades de manejo para a área de estudo, as quais exigem práticas de manejo de água e solo diferenciadas.

Recuperação de área degradada por construção de hidroelétrica com adubação verde e corretivo

As "áreas de empréstimo" em hidrelétricas são as áreas remanescentes da construção da fundação da barragem e podem ser consideradas áreas degradadas, pois delas foram retirados os horizontes superficiais do solo. Este trabalho teve como objetivo estudar a recuperação de um Latossolo Vermelho distrófico, degradado por construção civil (Usina Hidrelétrica de Ilha Solteira-SP), por meio de adubação verde e aplicação de calagem e gessagem. Os tratamentos constituíram-se de: testemunha (solo mobilizado e vegetação espontânea); mucuna-preta e guandu até 1994. Depois foram substituídos por feijão-de-porco; calcário + mucuna-preta; calcário + guandu até 1994. Nova substituição foi feita por feijão-de-porco; calcário + gesso + mucuna-preta e calcário + gesso + guandu até 1994. Outra substituição foi feita por feijão-de-porco. Esses tratamentos foram estabelecidos em blocos casualizados com quatro repetições: após quatro anos com os adubos verdes, um ano com milho, um ano com aveia-preta e dois anos com braquiária. Foram avaliados: pH, teores de Ca2+, Mg2+, P, K, capacidade de troca catiônica, saturação por bases e teor de matéria orgânica. Os tratamentos adotados estão recuperando os atributos químicos do solo degradado, e a mucuna-preta apresentou os melhores resultados, quando comparada ao guandu e feijão-de-porco. Os efeitos da recuperação dos atributos químicos do solo alcançaram a profundidade de 0,0-0,2 m. As técnicas adotadas para recuperação desses atributos químicos (adubação verde, calagem e gessagem) no primeiro ano atingiram a profundidade do solo de 0,0-0,1 m e, somente após cinco anos, de 0,0-0,2 m.

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Low-loss rib waveguides containing Si nanocrystals embedded in SiO2

We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100°C, forming a 0.4-um-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1¿to¿8¿¿m. Light propagation in the waveguide was observed and losses of 11dB/cm at 633 and 780 nm were measured, modeled and interpreted.

Size dependence of refractive index of Si nanoclusters embedded in SiO2

he complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices.

Optical-geometrical effects on the photoluminescence spectra of Si nanocrystals embedded in SiO2

We demonstrate that thickness, optical constants, and details of the multilayer stack, together with the detection setting, strongly influence the photoluminescence spectra of Si nanocrystals embedded in SiO2. Due to multiple reflections of the visible light against the opaque silicon substrate, an interference pattern is built inside the oxide layer, which is responsible for the modifications in the measured spectra. This interference effect is complicated by the depth dependence of (i) the intensity of the excitation laser and (ii) the concentration of the emitting nanocrystals. These variations can give rise to apparent features in the recorded spectra, such as peak shifts, satellite shoulders, and even splittings, which can be mistaken as intrinsic material features. Thus, they can give rise to an erroneous attribution of optical bands or estimate of the average particle size, while they are only optical-geometrical artifacts. We have analyzed these effects as a function of material composition (Si excess fraction) and thickness, and also evaluated how the geometry of the detection setup affects the measurements. To correct the experimental photoluminescence spectra and extract the true spectral shape of the emission from Si nanocrystals, we have developed an algorithm based on a modulation function, which depends on both the multilayer sequence and the experimental configuration. This procedure can be easily extended to other heterogeneous systems.

White luminescence from Si+ and C+ ion-implanted SiO2 films

The microstructural and optical analysis of SiO2 layers emitting white luminescence is reported. These structures have been synthesized by sequential Si+ and C+ ion implantation and high-temperature annealing. Their white emission results from the presence of up to three bands in the photoluminescence (PL) spectra, covering the whole visible spectral range. The microstructural characterization reveals the presence of a complex multilayer structure: Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being also smaller in size. This lack of uniformity in their density has been related to the inhibiting role of C in their growth dynamics. These nanocrystals are responsible for the band appearing in the red region of the PL spectrum. The analysis of the thermal evolution of the red PL band and its behavior after hydrogenation shows that carbon implantation also prevents the formation of well passivated Si/SiO2 interfaces. On the other hand, the PL bands appearing at higher energies show the existence of two different characteristics as a function of the implanted dose. For excess atomic concentrations below or equal to 10%, the spectra show a PL band in the blue region. At higher doses, two bands dominate the green¿blue spectral region. The evolution of these bands with the implanted dose and annealing time suggests that they are related to the formation of carbon-rich precipitates in the implanted region. Moreover, PL versus depth measurements provide a direct correlation of the green band with the carbon-implanted profile. These PL bands have been assigned to two distinct amorphous phases, with a composition close to elemental graphitic carbon or stoichiometric SiC.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

Efficient energy transfer from Si clusters to Er3+ in complex silicate glasses

We present an extensive study of the structural and optical emission properties in aluminum silicates and soda-lime silicates codoped with Si nanoclusters (Si-nc) and Er. Si excess of 5 and 15¿at.¿% and Er concentrations ranging from 2×1019 up to 6×1020¿cm¿3 were introduced by ion implantation. Thermal treatments at different temperatures were carried out before and after Er implantation. Structural characterization of the resulting structures was performed to obtain the layer composition and the size distribution of Si clusters. A comprehensive study has been carried out of the light emission as a function of the matrix characteristics, Si and Er contents, excitation wavelength, and power. Er emission at 1540¿nm has been detected in all coimplanted glasses, with similar intensities. We estimated lifetimes ranging from 2.5¿to¿12¿ms (depending on the Er dose and Si excess) and an effective excitation cross section of about 1×10¿17¿cm2 at low fluxes that decreases at high pump power. By quantifying the amount of Er ions excited through Si-nc we find a fraction of 10% of the total Er concentration. Upconversion coefficients of about 3×10¿18¿cm¿3¿s¿1 have been found for soda-lime glasses and one order of magnitude lower in aluminum silicates.