Thermal diffusivity measurements in organic liquids using transient thermal lens calorimetry

Thermal diffusivity measurements are carried out in certain organic liquids using the pulsed dual beam thermal lens technique. The 532 nm pulses from a frequency doubled Q-switched Nd:YAG laser are used as the heating source and an intensity stabilized He-Ne laser serves as the probe beam. Experimental determination of the characteristic time constant of the transient thermal lens signal is verified theoretically. Measured thermal diffusivity values are in excellent agreement with literature values.

Twin peak distribution of electron emission profile and impact ionization of ambient molecules during laser ablation of silver target

Laser-induced plasma generated from a silver target under partial vacuum conditions using the fundamental output of nanosecond duration from a pulsed Nd:yttrium aluminum garnet laser is studied using a Langmuir probe. The time of flight measurements show a clear twin peak distribution in the temporal profile of electron emission. The first peak has almost the same duration as the laser pulse while the second lasts for several microseconds. The prompt electrons are energetic enough ('60 eV) to ionize the ambient gas molecules or atoms. The use of prompt electron pulses as sources for electron impact excitation is demonstrated by taking nitrogen, carbon dioxide, and argon as ambient gases.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.